KR900017144A - Titanium nitride deposition apparatus and method in coldwell CVD reactor - Google Patents

Titanium nitride deposition apparatus and method in coldwell CVD reactor Download PDF

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Publication number
KR900017144A
KR900017144A KR1019900005728A KR900005728A KR900017144A KR 900017144 A KR900017144 A KR 900017144A KR 1019900005728 A KR1019900005728 A KR 1019900005728A KR 900005728 A KR900005728 A KR 900005728A KR 900017144 A KR900017144 A KR 900017144A
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wafer
titanium nitride
semiconductor wafer
coldwell
processing gas
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KR1019900005728A
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Korean (ko)
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셔먼 아더
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스탠리 지.코울
배리안 어소시에이츠 인코포레이티드
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Publication of KR900017144A publication Critical patent/KR900017144A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers

Abstract

내용 없음No content

Description

콜드웰 CVD 반응기에서의 티타늄 질화물 증착장치 및 그 방법Titanium nitride deposition apparatus and method in coldwell CVD reactor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 장치의 개략도,1 is a schematic representation of an apparatus according to the invention,

제2도는 티타늄 질화물의 결정 크기에 대한 주사식 전자 현미경 프로필,2 is a scanning electron microscope profile for the crystal size of titanium nitride,

제3도는 패턴화된 웨이퍼 상에 티타늄 질화물 적용 범위를 도시하고 있는 주사식 전자 현미경 프로필.3 shows a scanning electron microscope profile showing titanium nitride coverage on a patterned wafer.

Claims (6)

콜드웰 화학적 증기 증착 챔버내에 반도체 웨이퍼를 로딩(loading)하는 단계와, 상기 챔버로부터 대기 개스를 펌핑(Pumping) 하는 단계와, 웨이퍼를 가열하는 단계와, 티탄 염소 및 암모니아를 포함하는 처리 개스를 웨이퍼 위로 흐르게 하는 단계를 포함하는 반도체 웨이퍼 상에 티타늄 질화물 블랭켓 층을 형성하는 방법.Loading a semiconductor wafer into a coldwell chemical vapor deposition chamber, pumping atmospheric gas from the chamber, heating the wafer, and processing gas containing titanium chlorine and ammonia onto the wafer. Forming a layer of titanium nitride blanket on the semiconductor wafer comprising the step of flowing. 제1항에 있어서, 상기 처리 개스는 수소 및 질소를 포함하는 그룹으로부터 선택된 희석재를 포함하는 반도체 웨이퍼상에 티타늄 질화물의 블랭켓 층을 형성하는 방법.The method of claim 1, wherein the processing gas forms a blanket layer of titanium nitride on a semiconductor wafer comprising a diluent selected from the group comprising hydrogen and nitrogen. 제2항에 있어서, 상기 처리 개스가 웨이퍼 위를 흐르게 하는 단계에 앞서 섭씨 250도를 초과한 상태의 온도에서 혼합되어 있는 반도체 웨이퍼 상에 티타늄 질화물의 블랭켓 층을 형성하는 방법.3. The method of claim 2, wherein a blanket layer of titanium nitride is formed on a semiconductor wafer that is mixed at a temperature in excess of 250 degrees Celsius prior to flowing the processing gas over the wafer. 제3항에 있어서, 상기 콜드웰 화학적 증기 증착 챔버 내에 반도체 웨이퍼를 로딩하는 단계에 앞서 오존에 웨이퍼를 노출하는 단계를 더 포함하는 반도체 웨이퍼 상에 티타늄질화물의 블랭켓 층을 형성하는 방법.4. The method of claim 3, further comprising exposing the wafer to ozone prior to loading the semiconductor wafer into the coldwell chemical vapor deposition chamber. 제3항에 있어서, 상기 챔버로 부터 대기 개스를 펌픽하는 단계후에, 그리고 웨이퍼를 가열하는 단계 전에 이온화된 수소 개스로 웨이퍼의 표면을 깨끗하게 하는 단계가 또한 수행되는 반도체 웨이퍼 상에 티타늄 질화물의 블랭켓 층을 형성하는 방법.4. The blanket of titanium nitride as claimed in claim 3, wherein the step of cleaning the surface of the wafer with ionized hydrogen gas after the step of pumping the atmospheric gas from the chamber and before the step of heating the wafer is performed. How to form a layer. 오존에 웨이퍼를 노출하는 단계와 콜드웰 화학적 증기 증착 챔버내에 반도체 웨이퍼를 로딩하는 단계와, 상기 챔버로부터 대기 개스를 펌핑하는 단계와, 이온화된 수소 개스로 웨이퍼의 표면을 깨끗하게 하는 단계와, 섭씨 450도를 초과한 온도로 웨이퍼를 가열하는 단계와, 섭씨 250도를 초과한 온도에서 티탄 염소와 암모니아를 포함하고 있는 처리 개스를 혼합하는 단계와, 가열된 웨이퍼 위에 상기 처리 개스를 흐르게 하는 단계를 구비하는 반도체 웨이퍼 상에 티타늄 질화물의 블랭켓 층을 형성하는 방법.Exposing the wafer to ozone, loading a semiconductor wafer into a coldwell chemical vapor deposition chamber, pumping atmospheric gas from the chamber, cleaning the surface of the wafer with ionized hydrogen gas, 450 degrees Celsius Heating the wafer to a temperature above and mixing the processing gas containing titanium chlorine and ammonia at a temperature above 250 degrees Celsius, and flowing the processing gas over the heated wafer. A method of forming a blanket layer of titanium nitride on a semiconductor wafer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900005728A 1989-04-25 1990-04-24 Titanium nitride deposition apparatus and method in coldwell CVD reactor KR900017144A (en)

Applications Claiming Priority (2)

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US34292889A 1989-04-25 1989-04-25
US342,928 1989-04-25

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278100A (en) * 1991-11-08 1994-01-11 Micron Technology, Inc. Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers
JPH05311445A (en) * 1992-05-12 1993-11-22 Kawasaki Steel Corp Production of tin film
US5378501A (en) * 1993-10-05 1995-01-03 Foster; Robert F. Method for chemical vapor deposition of titanium nitride films at low temperatures
US5610106A (en) * 1995-03-10 1997-03-11 Sony Corporation Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
DE19634841A1 (en) * 1996-08-28 1998-03-05 Siemens Ag Process for planarizing a substrate surface
US6436820B1 (en) 2000-02-03 2002-08-20 Applied Materials, Inc Method for the CVD deposition of a low residual halogen content multi-layered titanium nitride film having a combined thickness greater than 1000 Å
CN104428876A (en) 2012-07-20 2015-03-18 富士胶片株式会社 Etching method, and method of producing semiconductor substrate product and semiconductor device using the same

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DE4012901A1 (en) 1990-12-06

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