JPS5587439A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5587439A JPS5587439A JP16402378A JP16402378A JPS5587439A JP S5587439 A JPS5587439 A JP S5587439A JP 16402378 A JP16402378 A JP 16402378A JP 16402378 A JP16402378 A JP 16402378A JP S5587439 A JPS5587439 A JP S5587439A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- electrode
- gas
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To easily prevent the surface of a semiconductor substrate from being contaminated by Na+ ion when forming a gate oxide film thereon, by subjecting beforehand the surface of the semiconductor substrate to plasma treatment using NH3 gas.
CONSTITUTION: When forming MOSIC, an Si substrate 1 is masked with an Si3N4 film 2 via an SiO2 film 5, and the film 2 is selectively oxidized to form thick, element-insulating isolated regions 3. Then, films 2, 5 are removed, and gate oxide films 6 are laid on element formation regions 4 consisting of exposed portions of the substrate 1. At this time, Na+ ion possibly flows between the surface of the substrate 1 and film 6. In order to prevent this, the substrate is subjected to pretreatment which will be described below. A plurality of such substrates 11 is laid on a water-cooled electrode 13 in a vacuum container 12, and the internal pressure of the container 12 is set to 0.01W1 Torr. Then, NH3 gas is blown into the container 12 through a gas introduction part 15. A high frequency current is applied between an electrode 14 disposed immediately under the gas introduction port 15 and an electrode 13 to generate plasma, with which the surface of the substrates 11 are treated for around 10 minutes.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16402378A JPS5587439A (en) | 1978-12-25 | 1978-12-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16402378A JPS5587439A (en) | 1978-12-25 | 1978-12-25 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5587439A true JPS5587439A (en) | 1980-07-02 |
Family
ID=15785315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16402378A Pending JPS5587439A (en) | 1978-12-25 | 1978-12-25 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5587439A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07169756A (en) * | 1994-11-07 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
WO2002101809A1 (en) * | 2001-06-11 | 2002-12-19 | Motorola, Inc. | Method for forming an oxide layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS527315A (en) * | 1975-05-28 | 1977-01-20 | Pechiney Aluminium | Making of wire consist of aluminium magnesiummsilicon alloy |
-
1978
- 1978-12-25 JP JP16402378A patent/JPS5587439A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS527315A (en) * | 1975-05-28 | 1977-01-20 | Pechiney Aluminium | Making of wire consist of aluminium magnesiummsilicon alloy |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07169756A (en) * | 1994-11-07 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
WO2002101809A1 (en) * | 2001-06-11 | 2002-12-19 | Motorola, Inc. | Method for forming an oxide layer |
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