JPS5587439A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5587439A
JPS5587439A JP16402378A JP16402378A JPS5587439A JP S5587439 A JPS5587439 A JP S5587439A JP 16402378 A JP16402378 A JP 16402378A JP 16402378 A JP16402378 A JP 16402378A JP S5587439 A JPS5587439 A JP S5587439A
Authority
JP
Japan
Prior art keywords
film
substrate
electrode
gas
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16402378A
Other languages
Japanese (ja)
Inventor
Minoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16402378A priority Critical patent/JPS5587439A/en
Publication of JPS5587439A publication Critical patent/JPS5587439A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To easily prevent the surface of a semiconductor substrate from being contaminated by Na+ ion when forming a gate oxide film thereon, by subjecting beforehand the surface of the semiconductor substrate to plasma treatment using NH3 gas.
CONSTITUTION: When forming MOSIC, an Si substrate 1 is masked with an Si3N4 film 2 via an SiO2 film 5, and the film 2 is selectively oxidized to form thick, element-insulating isolated regions 3. Then, films 2, 5 are removed, and gate oxide films 6 are laid on element formation regions 4 consisting of exposed portions of the substrate 1. At this time, Na+ ion possibly flows between the surface of the substrate 1 and film 6. In order to prevent this, the substrate is subjected to pretreatment which will be described below. A plurality of such substrates 11 is laid on a water-cooled electrode 13 in a vacuum container 12, and the internal pressure of the container 12 is set to 0.01W1 Torr. Then, NH3 gas is blown into the container 12 through a gas introduction part 15. A high frequency current is applied between an electrode 14 disposed immediately under the gas introduction port 15 and an electrode 13 to generate plasma, with which the surface of the substrates 11 are treated for around 10 minutes.
COPYRIGHT: (C)1980,JPO&Japio
JP16402378A 1978-12-25 1978-12-25 Manufacture of semiconductor device Pending JPS5587439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16402378A JPS5587439A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16402378A JPS5587439A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5587439A true JPS5587439A (en) 1980-07-02

Family

ID=15785315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16402378A Pending JPS5587439A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587439A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169756A (en) * 1994-11-07 1995-07-04 Semiconductor Energy Lab Co Ltd Plasma etching method
WO2002101809A1 (en) * 2001-06-11 2002-12-19 Motorola, Inc. Method for forming an oxide layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS527315A (en) * 1975-05-28 1977-01-20 Pechiney Aluminium Making of wire consist of aluminium magnesiummsilicon alloy

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS527315A (en) * 1975-05-28 1977-01-20 Pechiney Aluminium Making of wire consist of aluminium magnesiummsilicon alloy

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169756A (en) * 1994-11-07 1995-07-04 Semiconductor Energy Lab Co Ltd Plasma etching method
WO2002101809A1 (en) * 2001-06-11 2002-12-19 Motorola, Inc. Method for forming an oxide layer

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