JPS6472533A - Manufacture of single crystal semiconductor substrate - Google Patents

Manufacture of single crystal semiconductor substrate

Info

Publication number
JPS6472533A
JPS6472533A JP22919587A JP22919587A JPS6472533A JP S6472533 A JPS6472533 A JP S6472533A JP 22919587 A JP22919587 A JP 22919587A JP 22919587 A JP22919587 A JP 22919587A JP S6472533 A JPS6472533 A JP S6472533A
Authority
JP
Japan
Prior art keywords
single crystal
crystal semiconductor
semiconductor substrate
region
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22919587A
Other languages
Japanese (ja)
Inventor
Yasuhisa Omura
Katsutoshi Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP22919587A priority Critical patent/JPS6472533A/en
Publication of JPS6472533A publication Critical patent/JPS6472533A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a single crystal semiconductor region on an insulating region readily so that the semiconductor region has excellent crystalline property, by implanting oxygen ions in a single crystal semiconductor substrate in a highly vacuum state container, introducing hydrogen gas into the container, and performing heat treatment. CONSTITUTION:Oxygen ions 3 are implanted into a single crystal semiconductor substrates through its main surface in a container, which is kept at a highly vacuum state. Thus, a laminated body 6 of an oxygen ion implanted region 4 and a single crystal semiconductor region 5 thereon is formed on the main surface side of the single crystal semiconductor substrate 1. Then, heat treatment is performed for said single crystal semiconductor substrate 1 in hydrogen gas atmosphere. Thus, oxygen, which is unnecessarily introduced from said single crystal semiconductor region 5, is removed. The oxygen ion implanted region 4 is transformed into an insulating region 7 comprising oxide. When the single crystal semiconductor substrate is manufactured in this way, said heat treatment step is carried count in the hydrogen gas atmosphere, which is obtained by introducing hydrogen gas into a the highly vacuum state in the container that is used in the oxygen ion implanting step.
JP22919587A 1987-09-11 1987-09-11 Manufacture of single crystal semiconductor substrate Pending JPS6472533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22919587A JPS6472533A (en) 1987-09-11 1987-09-11 Manufacture of single crystal semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22919587A JPS6472533A (en) 1987-09-11 1987-09-11 Manufacture of single crystal semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS6472533A true JPS6472533A (en) 1989-03-17

Family

ID=16888299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22919587A Pending JPS6472533A (en) 1987-09-11 1987-09-11 Manufacture of single crystal semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS6472533A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310689A (en) * 1990-04-02 1994-05-10 Motorola, Inc. Method of forming a SIMOX structure
US6313014B1 (en) 1998-06-18 2001-11-06 Canon Kabushiki Kaisha Semiconductor substrate and manufacturing method of semiconductor substrate
WO2006009148A1 (en) * 2004-07-20 2006-01-26 Sumco Corporation Simox substrate manufacturing method
JPWO2005074033A1 (en) * 2004-01-30 2007-09-13 株式会社Sumco Manufacturing method of SOI wafer
CN107658225A (en) * 2016-07-26 2018-02-02 株式会社斯库林集团 heat treatment method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310689A (en) * 1990-04-02 1994-05-10 Motorola, Inc. Method of forming a SIMOX structure
US6313014B1 (en) 1998-06-18 2001-11-06 Canon Kabushiki Kaisha Semiconductor substrate and manufacturing method of semiconductor substrate
JPWO2005074033A1 (en) * 2004-01-30 2007-09-13 株式会社Sumco Manufacturing method of SOI wafer
US7867877B2 (en) 2004-01-30 2011-01-11 Sumco Corporation Method for manufacturing SOI wafer
JP4828230B2 (en) * 2004-01-30 2011-11-30 株式会社Ｓｕｍｃｏ Manufacturing method of SOI wafer
WO2006009148A1 (en) * 2004-07-20 2006-01-26 Sumco Corporation Simox substrate manufacturing method
JP2006032752A (en) * 2004-07-20 2006-02-02 Sumco Corp Method of manufacturing simox substrate
US7560363B2 (en) 2004-07-20 2009-07-14 Sumco Corporation Manufacturing method for SIMOX substrate
CN107658225A (en) * 2016-07-26 2018-02-02 株式会社斯库林集团 heat treatment method

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