JPS5766645A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5766645A
JPS5766645A JP55141623A JP14162380A JPS5766645A JP S5766645 A JPS5766645 A JP S5766645A JP 55141623 A JP55141623 A JP 55141623A JP 14162380 A JP14162380 A JP 14162380A JP S5766645 A JPS5766645 A JP S5766645A
Authority
JP
Japan
Prior art keywords
silicon
gas
layer
sputtering
metallic film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55141623A
Other languages
Japanese (ja)
Other versions
JPS6331933B2 (en
Inventor
Toshihiko Fukuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55141623A priority Critical patent/JPS5766645A/en
Publication of JPS5766645A publication Critical patent/JPS5766645A/en
Publication of JPS6331933B2 publication Critical patent/JPS6331933B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the oxidation of a metallic film having a high melting point and to subject movable ions to gettering by depositing the high melting point metallic film on a semiconductor substrate and by depositing a silicon nitride film containing phosphrous or arsenic on said high-melting metallic film. CONSTITUTION:A silicon dioxide layer 12 is formed on the surface of a silicon substrate 11 by means of thermal oxidication and the like. The silicon substrate 11 is then mounted to a sputtering treating device, and a molybdenum plate is provided as a target of the sputtering treating device. Further argon gas is introduced, and a sputtering treatment is performed to form a molybdenum layer 13 on the surface of the silicon dioxide layer 12. After that, the silicon substrate 11 is placed in a plasma gas phse growing device, and after said device is evacuated and temperature in said device is raised, phosphine gas and monosilane gas are supplied. Nitrogen gas is introduced, and an RF electric power is applied, thereby a silicon nitrode layer 14 containing phsophorous is formed on the molybdenum layer 13.
JP55141623A 1980-10-09 1980-10-09 Manufacture of semiconductor device Granted JPS5766645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55141623A JPS5766645A (en) 1980-10-09 1980-10-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55141623A JPS5766645A (en) 1980-10-09 1980-10-09 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5766645A true JPS5766645A (en) 1982-04-22
JPS6331933B2 JPS6331933B2 (en) 1988-06-27

Family

ID=15296340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55141623A Granted JPS5766645A (en) 1980-10-09 1980-10-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5766645A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60132345A (en) * 1983-12-02 1985-07-15 Yokogawa Hewlett Packard Ltd Manufacture of semiconductor element
JP2001514448A (en) * 1997-08-25 2001-09-11 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Reduction of charge loss in nonvolatile memory cells by phosphorus implantation into PECVD nitride / oxynitride film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5471577A (en) * 1977-11-18 1979-06-08 Toshiba Corp Production of semiconductor device
JPS5479567A (en) * 1977-12-07 1979-06-25 Chiyou Uru Esu Ai Gijiyutsu Ke Method of fabricating semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5471577A (en) * 1977-11-18 1979-06-08 Toshiba Corp Production of semiconductor device
JPS5479567A (en) * 1977-12-07 1979-06-25 Chiyou Uru Esu Ai Gijiyutsu Ke Method of fabricating semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60132345A (en) * 1983-12-02 1985-07-15 Yokogawa Hewlett Packard Ltd Manufacture of semiconductor element
JPH0535576B2 (en) * 1983-12-02 1993-05-26 Hewlett Packard Co
JP2001514448A (en) * 1997-08-25 2001-09-11 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Reduction of charge loss in nonvolatile memory cells by phosphorus implantation into PECVD nitride / oxynitride film

Also Published As

Publication number Publication date
JPS6331933B2 (en) 1988-06-27

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