JPS57207377A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57207377A JPS57207377A JP9183481A JP9183481A JPS57207377A JP S57207377 A JPS57207377 A JP S57207377A JP 9183481 A JP9183481 A JP 9183481A JP 9183481 A JP9183481 A JP 9183481A JP S57207377 A JPS57207377 A JP S57207377A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- regions
- semiconductor
- laminate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000012298 atmosphere Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 238000005546 reactive sputtering Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To obtain the semiconductor device in which contact between a semiconductor and a metal is stable even in succeeding heat treatment at a high temperature by forming a high-melting point metal nitride layer functioning as wiring or one part of an electrode to a section directly contacting with the semiconductor and thermally treating the surface at the high temperature of 700 deg.C or higher. CONSTITUTION:An N type layer 12 is grown onto a high-resistant Si substrate 11 in epitaxial form, and an Mo nitride layer 13 is shaped through reactive sputtering in a mixed atmohphere, the ratio of N2 to Ar therein is made 1:2. The introduction of N2 is stopped, an Mo layer 14 is deposited onto the layer 13 through the second sputtering in the atmosphere only of Ar, and the laminate of the layers 14, 13 with form smaller than an etching film 15 is left under the etching film while using the Si3N4 film 15 with predetermined shape as a mask. The film 15 is removed, N type impurity ions are injected while employing the laminate as a mask, and injection regions 16 are formed to the source and drain forming regions of the layers 12 at the both sides. The regions 16 are activated through heat treatment at 700 deg.C or higher for approximately twenty min. in N2 atmosphere.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9183481A JPS57207377A (en) | 1981-06-15 | 1981-06-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9183481A JPS57207377A (en) | 1981-06-15 | 1981-06-15 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57207377A true JPS57207377A (en) | 1982-12-20 |
Family
ID=14037618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9183481A Pending JPS57207377A (en) | 1981-06-15 | 1981-06-15 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57207377A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58135680A (en) * | 1982-02-08 | 1983-08-12 | Fujitsu Ltd | Semiconductor device |
JPS58222565A (en) * | 1982-06-21 | 1983-12-24 | Toshiba Corp | Semiconductor device |
JPS609159A (en) * | 1983-06-29 | 1985-01-18 | Fujitsu Ltd | Semiconductor device |
JPS6054335U (en) * | 1983-09-22 | 1985-04-16 | 富士電機株式会社 | glass sealed diode |
JPS616822A (en) * | 1984-04-13 | 1986-01-13 | フエアチアイルド カメラ アンド インストルメント コ−ポレ−シヨン | Method and structure for inhibiting external diffusion of dopant |
JPS6135517A (en) * | 1984-07-27 | 1986-02-20 | Toshiba Corp | Formation of semiconductor device |
JPS62200747A (en) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS507430A (en) * | 1973-05-18 | 1975-01-25 |
-
1981
- 1981-06-15 JP JP9183481A patent/JPS57207377A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS507430A (en) * | 1973-05-18 | 1975-01-25 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58135680A (en) * | 1982-02-08 | 1983-08-12 | Fujitsu Ltd | Semiconductor device |
JPS58222565A (en) * | 1982-06-21 | 1983-12-24 | Toshiba Corp | Semiconductor device |
JPS609159A (en) * | 1983-06-29 | 1985-01-18 | Fujitsu Ltd | Semiconductor device |
JPS6054335U (en) * | 1983-09-22 | 1985-04-16 | 富士電機株式会社 | glass sealed diode |
JPS616822A (en) * | 1984-04-13 | 1986-01-13 | フエアチアイルド カメラ アンド インストルメント コ−ポレ−シヨン | Method and structure for inhibiting external diffusion of dopant |
JPS6135517A (en) * | 1984-07-27 | 1986-02-20 | Toshiba Corp | Formation of semiconductor device |
JPS62200747A (en) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Manufacture of semiconductor device |
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