JPS5638839A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5638839A JPS5638839A JP11445379A JP11445379A JPS5638839A JP S5638839 A JPS5638839 A JP S5638839A JP 11445379 A JP11445379 A JP 11445379A JP 11445379 A JP11445379 A JP 11445379A JP S5638839 A JPS5638839 A JP S5638839A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- stepped section
- breaking
- semiconductor device
- injected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent the breaking at a stepped section on a conductor layer and to accomplish manufacture of the semiconductor device having an improved degree of integration by a method wherein the stepped section is provided on a field oxide film. CONSTITUTION:A source and drain region 12 is formed by diffusing phosphorus on a P type silicon substrate 11. Then a thick oxide film 13 is formed by performing a heat oxidation or using a CVD method. Next, phosphorus is injected from the surface of the oxide film 13 using an ion injection method and an impurity doped layer 13A is formed. Subsequently, the area excluding the gate region is covered by a resist 14 using a photolithographic technique. Then a dryetching is performed on the oxide film on the gate region of the oxide film 13. At this time, as etching rates vary according to the ion injected impurity, the difference in level at the stepped section is making a gentle slope. As a result, occurrence of a breaking at the stepped section when a conduction layer 16 is formed after formation of a gate oxide film, can be reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11445379A JPS5638839A (en) | 1979-09-06 | 1979-09-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11445379A JPS5638839A (en) | 1979-09-06 | 1979-09-06 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5638839A true JPS5638839A (en) | 1981-04-14 |
Family
ID=14638103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11445379A Pending JPS5638839A (en) | 1979-09-06 | 1979-09-06 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5638839A (en) |
-
1979
- 1979-09-06 JP JP11445379A patent/JPS5638839A/en active Pending
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