JPS5546535A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS5546535A
JPS5546535A JP11953778A JP11953778A JPS5546535A JP S5546535 A JPS5546535 A JP S5546535A JP 11953778 A JP11953778 A JP 11953778A JP 11953778 A JP11953778 A JP 11953778A JP S5546535 A JPS5546535 A JP S5546535A
Authority
JP
Japan
Prior art keywords
metal
silicide
films
insulating film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11953778A
Other languages
Japanese (ja)
Inventor
Kenji Shibata
Takanari Tsujimaru
Takamaro Mizoguchi
Toru Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP11953778A priority Critical patent/JPS5546535A/en
Publication of JPS5546535A publication Critical patent/JPS5546535A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve the tight fitting property of films of a metal of high melting point or a silicide thereof to a semiconductor substrate or an insulating film, by separately coating the films at several times and continuously treating these films with heat at each time of coating.
CONSTITUTION: An insulating film 2 is provided on the surface of a semiconductor substrate 1 of an electroconductive type. A part of the film 2 is removed so that a thin insulating film 3 is provided and a shaped workpiece is obtained. A metal of high melting point or a silicide thereof is coated at a thickness less than a prescribed value on the substrate 1. The films and the substrate are then continuously treated with heat under an atmosphere of inert gas. Coating and heat treatment are thereafter repeated so that a metal film 4 of the metal or the silicide thereof is produced at a desired thickness. A gate electrode film 5, a source region, a drain region, a source electrode 12, a gate electrode 13 and a drain electrode 14 are then produced by conventional methods. This results in improving the tight fitting property of the metal of high melting point or the silicide thereof to the semiconductor substrate or the insulating film and in enabling high-speed operation and high-degree integration based on self-arrangement.
COPYRIGHT: (C)1980,JPO&Japio
JP11953778A 1978-09-28 1978-09-28 Method of manufacturing semiconductor device Pending JPS5546535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11953778A JPS5546535A (en) 1978-09-28 1978-09-28 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11953778A JPS5546535A (en) 1978-09-28 1978-09-28 Method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5546535A true JPS5546535A (en) 1980-04-01

Family

ID=14763731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11953778A Pending JPS5546535A (en) 1978-09-28 1978-09-28 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5546535A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745951A (en) * 1980-09-03 1982-03-16 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6179049U (en) * 1984-10-31 1986-05-27
US4855245A (en) * 1985-09-13 1989-08-08 Siemens Aktiengesellschaft Method of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrate
US5134451A (en) * 1989-04-17 1992-07-28 Oki Electric Industry Co., Ltd. MOS semiconductive device
US6052795A (en) * 1995-10-30 2000-04-18 Hitachi, Ltd. Recovery method and system for continued I/O processing upon a controller failure
US6931567B2 (en) 2000-01-31 2005-08-16 Hitachi, Ltd. Storage system

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745951A (en) * 1980-09-03 1982-03-16 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6235269B2 (en) * 1980-09-03 1987-07-31 Matsushita Electric Ind Co Ltd
JPS6179049U (en) * 1984-10-31 1986-05-27
JPH0514042Y2 (en) * 1984-10-31 1993-04-14
US4855245A (en) * 1985-09-13 1989-08-08 Siemens Aktiengesellschaft Method of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrate
US5134451A (en) * 1989-04-17 1992-07-28 Oki Electric Industry Co., Ltd. MOS semiconductive device
US6052795A (en) * 1995-10-30 2000-04-18 Hitachi, Ltd. Recovery method and system for continued I/O processing upon a controller failure
US6412078B2 (en) 1995-10-30 2002-06-25 Hitachi, Ltd. External storage
US6931567B2 (en) 2000-01-31 2005-08-16 Hitachi, Ltd. Storage system

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