JPS5546535A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS5546535A JPS5546535A JP11953778A JP11953778A JPS5546535A JP S5546535 A JPS5546535 A JP S5546535A JP 11953778 A JP11953778 A JP 11953778A JP 11953778 A JP11953778 A JP 11953778A JP S5546535 A JPS5546535 A JP S5546535A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- silicide
- films
- insulating film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve the tight fitting property of films of a metal of high melting point or a silicide thereof to a semiconductor substrate or an insulating film, by separately coating the films at several times and continuously treating these films with heat at each time of coating.
CONSTITUTION: An insulating film 2 is provided on the surface of a semiconductor substrate 1 of an electroconductive type. A part of the film 2 is removed so that a thin insulating film 3 is provided and a shaped workpiece is obtained. A metal of high melting point or a silicide thereof is coated at a thickness less than a prescribed value on the substrate 1. The films and the substrate are then continuously treated with heat under an atmosphere of inert gas. Coating and heat treatment are thereafter repeated so that a metal film 4 of the metal or the silicide thereof is produced at a desired thickness. A gate electrode film 5, a source region, a drain region, a source electrode 12, a gate electrode 13 and a drain electrode 14 are then produced by conventional methods. This results in improving the tight fitting property of the metal of high melting point or the silicide thereof to the semiconductor substrate or the insulating film and in enabling high-speed operation and high-degree integration based on self-arrangement.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11953778A JPS5546535A (en) | 1978-09-28 | 1978-09-28 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11953778A JPS5546535A (en) | 1978-09-28 | 1978-09-28 | Method of manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5546535A true JPS5546535A (en) | 1980-04-01 |
Family
ID=14763731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11953778A Pending JPS5546535A (en) | 1978-09-28 | 1978-09-28 | Method of manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5546535A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5745951A (en) * | 1980-09-03 | 1982-03-16 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6179049U (en) * | 1984-10-31 | 1986-05-27 | ||
US4855245A (en) * | 1985-09-13 | 1989-08-08 | Siemens Aktiengesellschaft | Method of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrate |
US5134451A (en) * | 1989-04-17 | 1992-07-28 | Oki Electric Industry Co., Ltd. | MOS semiconductive device |
US6052795A (en) * | 1995-10-30 | 2000-04-18 | Hitachi, Ltd. | Recovery method and system for continued I/O processing upon a controller failure |
US6931567B2 (en) | 2000-01-31 | 2005-08-16 | Hitachi, Ltd. | Storage system |
-
1978
- 1978-09-28 JP JP11953778A patent/JPS5546535A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5745951A (en) * | 1980-09-03 | 1982-03-16 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6235269B2 (en) * | 1980-09-03 | 1987-07-31 | Matsushita Electric Ind Co Ltd | |
JPS6179049U (en) * | 1984-10-31 | 1986-05-27 | ||
JPH0514042Y2 (en) * | 1984-10-31 | 1993-04-14 | ||
US4855245A (en) * | 1985-09-13 | 1989-08-08 | Siemens Aktiengesellschaft | Method of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrate |
US5134451A (en) * | 1989-04-17 | 1992-07-28 | Oki Electric Industry Co., Ltd. | MOS semiconductive device |
US6052795A (en) * | 1995-10-30 | 2000-04-18 | Hitachi, Ltd. | Recovery method and system for continued I/O processing upon a controller failure |
US6412078B2 (en) | 1995-10-30 | 2002-06-25 | Hitachi, Ltd. | External storage |
US6931567B2 (en) | 2000-01-31 | 2005-08-16 | Hitachi, Ltd. | Storage system |
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