JPS5469964A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5469964A
JPS5469964A JP13697177A JP13697177A JPS5469964A JP S5469964 A JPS5469964 A JP S5469964A JP 13697177 A JP13697177 A JP 13697177A JP 13697177 A JP13697177 A JP 13697177A JP S5469964 A JPS5469964 A JP S5469964A
Authority
JP
Japan
Prior art keywords
substrate
heat treatment
silicon nitride
nitride films
entry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13697177A
Other languages
Japanese (ja)
Inventor
Nozomi Harada
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13697177A priority Critical patent/JPS5469964A/en
Publication of JPS5469964A publication Critical patent/JPS5469964A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To prevent the entry of impurities accompanied with heat treatment into a substrate and prevent degradation in characteristics by covering silicon nitride films on the front and back of a substrate prior to annealing.
CONSTITUTION: After Al electrodes 7, 8 are disposed, silicon nitride films 101, 102 are formed over the entire surface of the front and back of a substrate by a plasma CVD process. Next, heat treatment is performed in a N2 gas atmosphere of about 500°C in order to lower the contact resistance between the Al electrodes 7, 8 and source 2 and drain 3. This enables the entry of impurities such as alkali ions and heavy metals in the heat treatment process into the substrate to be prevented by the silicon nitride films 101, 102.
COPYRIGHT: (C)1979,JPO&Japio
JP13697177A 1977-11-15 1977-11-15 Production of semiconductor device Pending JPS5469964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13697177A JPS5469964A (en) 1977-11-15 1977-11-15 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13697177A JPS5469964A (en) 1977-11-15 1977-11-15 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5469964A true JPS5469964A (en) 1979-06-05

Family

ID=15187747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13697177A Pending JPS5469964A (en) 1977-11-15 1977-11-15 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5469964A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128036A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Manufacture of semiconductor device
JPS59107525A (en) * 1982-12-13 1984-06-21 Nec Corp Semiconductor device
US5698891A (en) * 1994-03-25 1997-12-16 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
WO2000060646A1 (en) * 1999-04-01 2000-10-12 Infineon Technologies Ag Method of processing a monocrystalline semiconductor disk and partially processed semiconductor disk

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128036A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Manufacture of semiconductor device
JPS59107525A (en) * 1982-12-13 1984-06-21 Nec Corp Semiconductor device
US5698891A (en) * 1994-03-25 1997-12-16 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
WO2000060646A1 (en) * 1999-04-01 2000-10-12 Infineon Technologies Ag Method of processing a monocrystalline semiconductor disk and partially processed semiconductor disk
US6531378B2 (en) 1999-04-01 2003-03-11 Infineon Technologies Ag Method for processing wafer by applying layer to protect the backside during a tempering step and removing contaminated portions of the layer

Similar Documents

Publication Publication Date Title
JPS5530846A (en) Method for manufacturing fixed memory
JPS5469964A (en) Production of semiconductor device
JPS54104770A (en) Heat treatment method for 3-5 group compound semiconductor
JPS5512752A (en) Semiconductor device manufacturing method
JPS5546535A (en) Method of manufacturing semiconductor device
JPS57115823A (en) Manufacture of amorphous semiconductor film
JPS56105652A (en) Manufacture of semiconductor device
JPS5420671A (en) Production of semiconductor devices
JPS5638863A (en) Semiconductor device
JPS51118381A (en) Manufacturing process for semiconductor unit
JPS52139373A (en) Treating method for compound semiconductor
JPS5492183A (en) Manufacture of mis type semiconductor device
JPS6445172A (en) Hydrogen plasma treatment of polycrystalline silicon thin film transistor
JPS5776832A (en) Method for forming palladium silicide
JPS53137678A (en) Manufacture for mos type semiconductor device
JPS5472668A (en) Manufacture for semiconductor device
JPS5272162A (en) Production of semiconductor device
JPS5565438A (en) Semiconductor substrate treatment
JPS57132357A (en) Manufacture of semiconductor element
JPS5390784A (en) Production of semiconductor device
JPS5587439A (en) Manufacture of semiconductor device
JPS5728353A (en) Manufacture of semiconductor device
JPS5418685A (en) Manufacture of field effect type semiconductor device
JPS57204170A (en) Manufacture of mos type field effect transistor
JPS5210673A (en) Manufacturing method of silicon semi-conductor device