JPS52139373A - Treating method for compound semiconductor - Google Patents
Treating method for compound semiconductorInfo
- Publication number
- JPS52139373A JPS52139373A JP5538576A JP5538576A JPS52139373A JP S52139373 A JPS52139373 A JP S52139373A JP 5538576 A JP5538576 A JP 5538576A JP 5538576 A JP5538576 A JP 5538576A JP S52139373 A JPS52139373 A JP S52139373A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- treating method
- deposit
- degrading
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To recover damages by gas plasma without degrading the characteristics of electrodes by annealing the deposit in a non-oxidative atmosphere of more than 100°C at a temperature below the reaction temperature of the substrate and the deposit.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5538576A JPS52139373A (en) | 1976-05-17 | 1976-05-17 | Treating method for compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5538576A JPS52139373A (en) | 1976-05-17 | 1976-05-17 | Treating method for compound semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52139373A true JPS52139373A (en) | 1977-11-21 |
Family
ID=12997023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5538576A Pending JPS52139373A (en) | 1976-05-17 | 1976-05-17 | Treating method for compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52139373A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5533060A (en) * | 1978-08-28 | 1980-03-08 | Semiconductor Res Found | Composite dry etching process |
JPS5792833A (en) * | 1980-12-01 | 1982-06-09 | Toshiba Corp | Manufacture of semiconductor device |
JPS63200529A (en) * | 1987-02-16 | 1988-08-18 | Takeshi Kobayashi | Manufacture of metal-semiconductor hetero-epitaxial film and semiconductor-metal-semiconductor double-heretro-epitaxial film |
-
1976
- 1976-05-17 JP JP5538576A patent/JPS52139373A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5533060A (en) * | 1978-08-28 | 1980-03-08 | Semiconductor Res Found | Composite dry etching process |
JPS6349372B2 (en) * | 1978-08-28 | 1988-10-04 | Handotai Kenkyu Shinkokai | |
JPS5792833A (en) * | 1980-12-01 | 1982-06-09 | Toshiba Corp | Manufacture of semiconductor device |
JPS63200529A (en) * | 1987-02-16 | 1988-08-18 | Takeshi Kobayashi | Manufacture of metal-semiconductor hetero-epitaxial film and semiconductor-metal-semiconductor double-heretro-epitaxial film |
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