JPS52139373A - Treating method for compound semiconductor - Google Patents

Treating method for compound semiconductor

Info

Publication number
JPS52139373A
JPS52139373A JP5538576A JP5538576A JPS52139373A JP S52139373 A JPS52139373 A JP S52139373A JP 5538576 A JP5538576 A JP 5538576A JP 5538576 A JP5538576 A JP 5538576A JP S52139373 A JPS52139373 A JP S52139373A
Authority
JP
Japan
Prior art keywords
compound semiconductor
treating method
deposit
degrading
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5538576A
Other languages
Japanese (ja)
Inventor
Fumio Murai
Susumu Takahashi
Hirokazu Kurono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5538576A priority Critical patent/JPS52139373A/en
Publication of JPS52139373A publication Critical patent/JPS52139373A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To recover damages by gas plasma without degrading the characteristics of electrodes by annealing the deposit in a non-oxidative atmosphere of more than 100°C at a temperature below the reaction temperature of the substrate and the deposit.
COPYRIGHT: (C)1977,JPO&Japio
JP5538576A 1976-05-17 1976-05-17 Treating method for compound semiconductor Pending JPS52139373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5538576A JPS52139373A (en) 1976-05-17 1976-05-17 Treating method for compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5538576A JPS52139373A (en) 1976-05-17 1976-05-17 Treating method for compound semiconductor

Publications (1)

Publication Number Publication Date
JPS52139373A true JPS52139373A (en) 1977-11-21

Family

ID=12997023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5538576A Pending JPS52139373A (en) 1976-05-17 1976-05-17 Treating method for compound semiconductor

Country Status (1)

Country Link
JP (1) JPS52139373A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533060A (en) * 1978-08-28 1980-03-08 Semiconductor Res Found Composite dry etching process
JPS5792833A (en) * 1980-12-01 1982-06-09 Toshiba Corp Manufacture of semiconductor device
JPS63200529A (en) * 1987-02-16 1988-08-18 Takeshi Kobayashi Manufacture of metal-semiconductor hetero-epitaxial film and semiconductor-metal-semiconductor double-heretro-epitaxial film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533060A (en) * 1978-08-28 1980-03-08 Semiconductor Res Found Composite dry etching process
JPS6349372B2 (en) * 1978-08-28 1988-10-04 Handotai Kenkyu Shinkokai
JPS5792833A (en) * 1980-12-01 1982-06-09 Toshiba Corp Manufacture of semiconductor device
JPS63200529A (en) * 1987-02-16 1988-08-18 Takeshi Kobayashi Manufacture of metal-semiconductor hetero-epitaxial film and semiconductor-metal-semiconductor double-heretro-epitaxial film

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