JPS5423379A - Formation of insulating film on semiconductor surface - Google Patents

Formation of insulating film on semiconductor surface

Info

Publication number
JPS5423379A
JPS5423379A JP8804477A JP8804477A JPS5423379A JP S5423379 A JPS5423379 A JP S5423379A JP 8804477 A JP8804477 A JP 8804477A JP 8804477 A JP8804477 A JP 8804477A JP S5423379 A JPS5423379 A JP S5423379A
Authority
JP
Japan
Prior art keywords
formation
insulating film
semiconductor surface
reaction
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8804477A
Other languages
Japanese (ja)
Other versions
JPS5653215B2 (en
Inventor
Takao Nozaki
Takashi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8804477A priority Critical patent/JPS5423379A/en
Publication of JPS5423379A publication Critical patent/JPS5423379A/en
Publication of JPS5653215B2 publication Critical patent/JPS5653215B2/ja
Granted legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To form a minute and uniform non-crystal Si3N4 film through reaction to a Si exposed surface in an atmosphere containing NH3 after heating up to a reaction temperature in an inert gas against direct nitriding reaction.
COPYRIGHT: (C)1979,JPO&Japio
JP8804477A 1977-07-22 1977-07-22 Formation of insulating film on semiconductor surface Granted JPS5423379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8804477A JPS5423379A (en) 1977-07-22 1977-07-22 Formation of insulating film on semiconductor surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8804477A JPS5423379A (en) 1977-07-22 1977-07-22 Formation of insulating film on semiconductor surface

Publications (2)

Publication Number Publication Date
JPS5423379A true JPS5423379A (en) 1979-02-21
JPS5653215B2 JPS5653215B2 (en) 1981-12-17

Family

ID=13931819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8804477A Granted JPS5423379A (en) 1977-07-22 1977-07-22 Formation of insulating film on semiconductor surface

Country Status (1)

Country Link
JP (1) JPS5423379A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5762537A (en) * 1980-10-02 1982-04-15 Semiconductor Energy Lab Co Ltd Forming method for film
JPS5767009A (en) * 1980-10-02 1982-04-23 Semiconductor Energy Lab Co Ltd Formation of film
WO1983000773A1 (en) * 1979-02-27 1983-03-03 Takao Nozaki Method of producing semiconductor devices
US5838056A (en) * 1994-05-27 1998-11-17 Kabushiki Kaisha Toshiba Semiconductor device applied to composite insulative film and manufacturing method thereof
US6194775B1 (en) 1997-01-16 2001-02-27 Nec Corporation Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916221A (en) * 1972-06-07 1974-02-13
JPS5199980A (en) * 1975-02-28 1976-09-03 Fujitsu Ltd mis gatahandotaisochi

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916221A (en) * 1972-06-07 1974-02-13
JPS5199980A (en) * 1975-02-28 1976-09-03 Fujitsu Ltd mis gatahandotaisochi

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983000773A1 (en) * 1979-02-27 1983-03-03 Takao Nozaki Method of producing semiconductor devices
JPS5762537A (en) * 1980-10-02 1982-04-15 Semiconductor Energy Lab Co Ltd Forming method for film
JPS5767009A (en) * 1980-10-02 1982-04-23 Semiconductor Energy Lab Co Ltd Formation of film
JPH0355401B2 (en) * 1980-10-02 1991-08-23
US5838056A (en) * 1994-05-27 1998-11-17 Kabushiki Kaisha Toshiba Semiconductor device applied to composite insulative film and manufacturing method thereof
US6171977B1 (en) * 1994-05-27 2001-01-09 Kabushiki Kaisha Toshiba Semiconductor device applied to composite insulative film manufacturing method thereof
US6194775B1 (en) 1997-01-16 2001-02-27 Nec Corporation Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same
US6358808B1 (en) 1997-01-16 2002-03-19 Nec Corporation Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same

Also Published As

Publication number Publication date
JPS5653215B2 (en) 1981-12-17

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