JPS5423379A - Formation of insulating film on semiconductor surface - Google Patents
Formation of insulating film on semiconductor surfaceInfo
- Publication number
- JPS5423379A JPS5423379A JP8804477A JP8804477A JPS5423379A JP S5423379 A JPS5423379 A JP S5423379A JP 8804477 A JP8804477 A JP 8804477A JP 8804477 A JP8804477 A JP 8804477A JP S5423379 A JPS5423379 A JP S5423379A
- Authority
- JP
- Japan
- Prior art keywords
- formation
- insulating film
- semiconductor surface
- reaction
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To form a minute and uniform non-crystal Si3N4 film through reaction to a Si exposed surface in an atmosphere containing NH3 after heating up to a reaction temperature in an inert gas against direct nitriding reaction.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8804477A JPS5423379A (en) | 1977-07-22 | 1977-07-22 | Formation of insulating film on semiconductor surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8804477A JPS5423379A (en) | 1977-07-22 | 1977-07-22 | Formation of insulating film on semiconductor surface |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5423379A true JPS5423379A (en) | 1979-02-21 |
JPS5653215B2 JPS5653215B2 (en) | 1981-12-17 |
Family
ID=13931819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8804477A Granted JPS5423379A (en) | 1977-07-22 | 1977-07-22 | Formation of insulating film on semiconductor surface |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5423379A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5762537A (en) * | 1980-10-02 | 1982-04-15 | Semiconductor Energy Lab Co Ltd | Forming method for film |
JPS5767009A (en) * | 1980-10-02 | 1982-04-23 | Semiconductor Energy Lab Co Ltd | Formation of film |
WO1983000773A1 (en) * | 1979-02-27 | 1983-03-03 | Takao Nozaki | Method of producing semiconductor devices |
US5838056A (en) * | 1994-05-27 | 1998-11-17 | Kabushiki Kaisha Toshiba | Semiconductor device applied to composite insulative film and manufacturing method thereof |
US6194775B1 (en) | 1997-01-16 | 2001-02-27 | Nec Corporation | Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4916221A (en) * | 1972-06-07 | 1974-02-13 | ||
JPS5199980A (en) * | 1975-02-28 | 1976-09-03 | Fujitsu Ltd | mis gatahandotaisochi |
-
1977
- 1977-07-22 JP JP8804477A patent/JPS5423379A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4916221A (en) * | 1972-06-07 | 1974-02-13 | ||
JPS5199980A (en) * | 1975-02-28 | 1976-09-03 | Fujitsu Ltd | mis gatahandotaisochi |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1983000773A1 (en) * | 1979-02-27 | 1983-03-03 | Takao Nozaki | Method of producing semiconductor devices |
JPS5762537A (en) * | 1980-10-02 | 1982-04-15 | Semiconductor Energy Lab Co Ltd | Forming method for film |
JPS5767009A (en) * | 1980-10-02 | 1982-04-23 | Semiconductor Energy Lab Co Ltd | Formation of film |
JPH0355401B2 (en) * | 1980-10-02 | 1991-08-23 | ||
US5838056A (en) * | 1994-05-27 | 1998-11-17 | Kabushiki Kaisha Toshiba | Semiconductor device applied to composite insulative film and manufacturing method thereof |
US6171977B1 (en) * | 1994-05-27 | 2001-01-09 | Kabushiki Kaisha Toshiba | Semiconductor device applied to composite insulative film manufacturing method thereof |
US6194775B1 (en) | 1997-01-16 | 2001-02-27 | Nec Corporation | Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same |
US6358808B1 (en) | 1997-01-16 | 2002-03-19 | Nec Corporation | Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JPS5653215B2 (en) | 1981-12-17 |
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