JPS5421264A - Forming method of semiconductor surface magnetization - Google Patents

Forming method of semiconductor surface magnetization

Info

Publication number
JPS5421264A
JPS5421264A JP8623477A JP8623477A JPS5421264A JP S5421264 A JPS5421264 A JP S5421264A JP 8623477 A JP8623477 A JP 8623477A JP 8623477 A JP8623477 A JP 8623477A JP S5421264 A JPS5421264 A JP S5421264A
Authority
JP
Japan
Prior art keywords
forming method
semiconductor surface
surface magnetization
magnetization
noncrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8623477A
Other languages
Japanese (ja)
Inventor
Takashi Ito
Takao Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8623477A priority Critical patent/JPS5421264A/en
Publication of JPS5421264A publication Critical patent/JPS5421264A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To establish Si3N4 film suitable for OG FET, very fine and uniform noncrystal, by containing a Si wafer in the reaction tube formed with Si and by heating it while flowing N2 gas.
COPYRIGHT: (C)1979,JPO&Japio
JP8623477A 1977-07-19 1977-07-19 Forming method of semiconductor surface magnetization Pending JPS5421264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8623477A JPS5421264A (en) 1977-07-19 1977-07-19 Forming method of semiconductor surface magnetization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8623477A JPS5421264A (en) 1977-07-19 1977-07-19 Forming method of semiconductor surface magnetization

Publications (1)

Publication Number Publication Date
JPS5421264A true JPS5421264A (en) 1979-02-17

Family

ID=13881095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8623477A Pending JPS5421264A (en) 1977-07-19 1977-07-19 Forming method of semiconductor surface magnetization

Country Status (1)

Country Link
JP (1) JPS5421264A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1980001740A1 (en) * 1979-02-19 1980-08-21 Fujitsu Ltd Method of producing semiconductor devices
WO1980001739A1 (en) * 1979-02-19 1980-08-21 Fujitsu Ltd Method of producing insulating film for semiconductor surfaces
US5656516A (en) * 1994-06-03 1997-08-12 Sony Corporation Method for forming silicon oxide layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1980001740A1 (en) * 1979-02-19 1980-08-21 Fujitsu Ltd Method of producing semiconductor devices
WO1980001739A1 (en) * 1979-02-19 1980-08-21 Fujitsu Ltd Method of producing insulating film for semiconductor surfaces
US5656516A (en) * 1994-06-03 1997-08-12 Sony Corporation Method for forming silicon oxide layer

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