JPS5421264A - Forming method of semiconductor surface magnetization - Google Patents
Forming method of semiconductor surface magnetizationInfo
- Publication number
- JPS5421264A JPS5421264A JP8623477A JP8623477A JPS5421264A JP S5421264 A JPS5421264 A JP S5421264A JP 8623477 A JP8623477 A JP 8623477A JP 8623477 A JP8623477 A JP 8623477A JP S5421264 A JPS5421264 A JP S5421264A
- Authority
- JP
- Japan
- Prior art keywords
- forming method
- semiconductor surface
- surface magnetization
- magnetization
- noncrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To establish Si3N4 film suitable for OG FET, very fine and uniform noncrystal, by containing a Si wafer in the reaction tube formed with Si and by heating it while flowing N2 gas.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8623477A JPS5421264A (en) | 1977-07-19 | 1977-07-19 | Forming method of semiconductor surface magnetization |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8623477A JPS5421264A (en) | 1977-07-19 | 1977-07-19 | Forming method of semiconductor surface magnetization |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5421264A true JPS5421264A (en) | 1979-02-17 |
Family
ID=13881095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8623477A Pending JPS5421264A (en) | 1977-07-19 | 1977-07-19 | Forming method of semiconductor surface magnetization |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5421264A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1980001740A1 (en) * | 1979-02-19 | 1980-08-21 | Fujitsu Ltd | Method of producing semiconductor devices |
WO1980001739A1 (en) * | 1979-02-19 | 1980-08-21 | Fujitsu Ltd | Method of producing insulating film for semiconductor surfaces |
US5656516A (en) * | 1994-06-03 | 1997-08-12 | Sony Corporation | Method for forming silicon oxide layer |
-
1977
- 1977-07-19 JP JP8623477A patent/JPS5421264A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1980001740A1 (en) * | 1979-02-19 | 1980-08-21 | Fujitsu Ltd | Method of producing semiconductor devices |
WO1980001739A1 (en) * | 1979-02-19 | 1980-08-21 | Fujitsu Ltd | Method of producing insulating film for semiconductor surfaces |
US5656516A (en) * | 1994-06-03 | 1997-08-12 | Sony Corporation | Method for forming silicon oxide layer |
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