JPS5333580A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5333580A
JPS5333580A JP10858676A JP10858676A JPS5333580A JP S5333580 A JPS5333580 A JP S5333580A JP 10858676 A JP10858676 A JP 10858676A JP 10858676 A JP10858676 A JP 10858676A JP S5333580 A JPS5333580 A JP S5333580A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
ppm
concentration
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10858676A
Other languages
Japanese (ja)
Inventor
Takashi Ito
Takao Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10858676A priority Critical patent/JPS5333580A/en
Publication of JPS5333580A publication Critical patent/JPS5333580A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form a stable Si3N4 film by heating a Si wafer in an N2 gas atmosphere, with O2 concentration being made less than 0.1 ppm and moisture concentration 1 to 3 ppm.
COPYRIGHT: (C)1978,JPO&Japio
JP10858676A 1976-09-09 1976-09-09 Production of semiconductor device Pending JPS5333580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10858676A JPS5333580A (en) 1976-09-09 1976-09-09 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10858676A JPS5333580A (en) 1976-09-09 1976-09-09 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5333580A true JPS5333580A (en) 1978-03-29

Family

ID=14488552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10858676A Pending JPS5333580A (en) 1976-09-09 1976-09-09 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5333580A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478765A (en) * 1994-05-04 1995-12-26 Regents Of The University Of Texas System Method of making an ultra thin dielectric for electronic devices
US5838056A (en) * 1994-05-27 1998-11-17 Kabushiki Kaisha Toshiba Semiconductor device applied to composite insulative film and manufacturing method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY#V115#M10=1968 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478765A (en) * 1994-05-04 1995-12-26 Regents Of The University Of Texas System Method of making an ultra thin dielectric for electronic devices
US5838056A (en) * 1994-05-27 1998-11-17 Kabushiki Kaisha Toshiba Semiconductor device applied to composite insulative film and manufacturing method thereof
US6171977B1 (en) * 1994-05-27 2001-01-09 Kabushiki Kaisha Toshiba Semiconductor device applied to composite insulative film manufacturing method thereof

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