JPS5333580A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5333580A JPS5333580A JP10858676A JP10858676A JPS5333580A JP S5333580 A JPS5333580 A JP S5333580A JP 10858676 A JP10858676 A JP 10858676A JP 10858676 A JP10858676 A JP 10858676A JP S5333580 A JPS5333580 A JP S5333580A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- ppm
- concentration
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form a stable Si3N4 film by heating a Si wafer in an N2 gas atmosphere, with O2 concentration being made less than 0.1 ppm and moisture concentration 1 to 3 ppm.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10858676A JPS5333580A (en) | 1976-09-09 | 1976-09-09 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10858676A JPS5333580A (en) | 1976-09-09 | 1976-09-09 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5333580A true JPS5333580A (en) | 1978-03-29 |
Family
ID=14488552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10858676A Pending JPS5333580A (en) | 1976-09-09 | 1976-09-09 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5333580A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5478765A (en) * | 1994-05-04 | 1995-12-26 | Regents Of The University Of Texas System | Method of making an ultra thin dielectric for electronic devices |
US5838056A (en) * | 1994-05-27 | 1998-11-17 | Kabushiki Kaisha Toshiba | Semiconductor device applied to composite insulative film and manufacturing method thereof |
-
1976
- 1976-09-09 JP JP10858676A patent/JPS5333580A/en active Pending
Non-Patent Citations (1)
Title |
---|
JOURNAL OF THE ELECTROCHEMICAL SOCIETY#V115#M10=1968 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5478765A (en) * | 1994-05-04 | 1995-12-26 | Regents Of The University Of Texas System | Method of making an ultra thin dielectric for electronic devices |
US5838056A (en) * | 1994-05-27 | 1998-11-17 | Kabushiki Kaisha Toshiba | Semiconductor device applied to composite insulative film and manufacturing method thereof |
US6171977B1 (en) * | 1994-05-27 | 2001-01-09 | Kabushiki Kaisha Toshiba | Semiconductor device applied to composite insulative film manufacturing method thereof |
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