JPS53123667A - Generator for semiconuctor oxidized film - Google Patents
Generator for semiconuctor oxidized filmInfo
- Publication number
- JPS53123667A JPS53123667A JP3876077A JP3876077A JPS53123667A JP S53123667 A JPS53123667 A JP S53123667A JP 3876077 A JP3876077 A JP 3876077A JP 3876077 A JP3876077 A JP 3876077A JP S53123667 A JPS53123667 A JP S53123667A
- Authority
- JP
- Japan
- Prior art keywords
- oxidized film
- semiconuctor
- generator
- generates
- vapor atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain an oxidized film of uniform film thickness, by dividing the inside of a reacting furnace tube into the burning region which generates a highpressure vapor atmosphere by buring O2 and H2 and the generative region which generates an oxidized film on the semiconductor substrate in the generated vapor atmosphere.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3876077A JPS53123667A (en) | 1977-04-04 | 1977-04-04 | Generator for semiconuctor oxidized film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3876077A JPS53123667A (en) | 1977-04-04 | 1977-04-04 | Generator for semiconuctor oxidized film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53123667A true JPS53123667A (en) | 1978-10-28 |
JPS626342B2 JPS626342B2 (en) | 1987-02-10 |
Family
ID=12534230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3876077A Granted JPS53123667A (en) | 1977-04-04 | 1977-04-04 | Generator for semiconuctor oxidized film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53123667A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5590405A (en) * | 1978-12-27 | 1980-07-09 | Hitachi Ltd | Forming device for wet oxygen and heat treatment furnace provided with the said device |
JPS60122799A (en) * | 1984-05-25 | 1985-07-01 | Hitachi Ltd | Heat treatment of semiconductor wafer |
JPS60131807A (en) * | 1984-05-25 | 1985-07-13 | Hitachi Ltd | Apparatus for producing wet oxygen atmosphere |
JPS61146945U (en) * | 1986-02-27 | 1986-09-10 | ||
JPH01280320A (en) * | 1988-05-06 | 1989-11-10 | Tel Sagami Ltd | Semiconductor pressure oxidation |
US4950870A (en) * | 1987-11-21 | 1990-08-21 | Tel Sagami Limited | Heat-treating apparatus |
-
1977
- 1977-04-04 JP JP3876077A patent/JPS53123667A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5590405A (en) * | 1978-12-27 | 1980-07-09 | Hitachi Ltd | Forming device for wet oxygen and heat treatment furnace provided with the said device |
JPS6360528B2 (en) * | 1978-12-27 | 1988-11-24 | ||
JPS60122799A (en) * | 1984-05-25 | 1985-07-01 | Hitachi Ltd | Heat treatment of semiconductor wafer |
JPS60131807A (en) * | 1984-05-25 | 1985-07-13 | Hitachi Ltd | Apparatus for producing wet oxygen atmosphere |
JPH0372599B2 (en) * | 1984-05-25 | 1991-11-19 | Hitachi Ltd | |
JPS61146945U (en) * | 1986-02-27 | 1986-09-10 | ||
US4950870A (en) * | 1987-11-21 | 1990-08-21 | Tel Sagami Limited | Heat-treating apparatus |
JPH01280320A (en) * | 1988-05-06 | 1989-11-10 | Tel Sagami Ltd | Semiconductor pressure oxidation |
Also Published As
Publication number | Publication date |
---|---|
JPS626342B2 (en) | 1987-02-10 |
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