JPS53123667A - Generator for semiconuctor oxidized film - Google Patents

Generator for semiconuctor oxidized film

Info

Publication number
JPS53123667A
JPS53123667A JP3876077A JP3876077A JPS53123667A JP S53123667 A JPS53123667 A JP S53123667A JP 3876077 A JP3876077 A JP 3876077A JP 3876077 A JP3876077 A JP 3876077A JP S53123667 A JPS53123667 A JP S53123667A
Authority
JP
Japan
Prior art keywords
oxidized film
semiconuctor
generator
generates
vapor atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3876077A
Other languages
Japanese (ja)
Other versions
JPS626342B2 (en
Inventor
Natsuo Tsubouchi
Akira Nishimoto
Kuniaki Miyake
Hirokazu Miyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3876077A priority Critical patent/JPS53123667A/en
Publication of JPS53123667A publication Critical patent/JPS53123667A/en
Publication of JPS626342B2 publication Critical patent/JPS626342B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain an oxidized film of uniform film thickness, by dividing the inside of a reacting furnace tube into the burning region which generates a highpressure vapor atmosphere by buring O2 and H2 and the generative region which generates an oxidized film on the semiconductor substrate in the generated vapor atmosphere.
COPYRIGHT: (C)1978,JPO&Japio
JP3876077A 1977-04-04 1977-04-04 Generator for semiconuctor oxidized film Granted JPS53123667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3876077A JPS53123667A (en) 1977-04-04 1977-04-04 Generator for semiconuctor oxidized film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3876077A JPS53123667A (en) 1977-04-04 1977-04-04 Generator for semiconuctor oxidized film

Publications (2)

Publication Number Publication Date
JPS53123667A true JPS53123667A (en) 1978-10-28
JPS626342B2 JPS626342B2 (en) 1987-02-10

Family

ID=12534230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3876077A Granted JPS53123667A (en) 1977-04-04 1977-04-04 Generator for semiconuctor oxidized film

Country Status (1)

Country Link
JP (1) JPS53123667A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5590405A (en) * 1978-12-27 1980-07-09 Hitachi Ltd Forming device for wet oxygen and heat treatment furnace provided with the said device
JPS60122799A (en) * 1984-05-25 1985-07-01 Hitachi Ltd Heat treatment of semiconductor wafer
JPS60131807A (en) * 1984-05-25 1985-07-13 Hitachi Ltd Apparatus for producing wet oxygen atmosphere
JPS61146945U (en) * 1986-02-27 1986-09-10
JPH01280320A (en) * 1988-05-06 1989-11-10 Tel Sagami Ltd Semiconductor pressure oxidation
US4950870A (en) * 1987-11-21 1990-08-21 Tel Sagami Limited Heat-treating apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5590405A (en) * 1978-12-27 1980-07-09 Hitachi Ltd Forming device for wet oxygen and heat treatment furnace provided with the said device
JPS6360528B2 (en) * 1978-12-27 1988-11-24
JPS60122799A (en) * 1984-05-25 1985-07-01 Hitachi Ltd Heat treatment of semiconductor wafer
JPS60131807A (en) * 1984-05-25 1985-07-13 Hitachi Ltd Apparatus for producing wet oxygen atmosphere
JPH0372599B2 (en) * 1984-05-25 1991-11-19 Hitachi Ltd
JPS61146945U (en) * 1986-02-27 1986-09-10
US4950870A (en) * 1987-11-21 1990-08-21 Tel Sagami Limited Heat-treating apparatus
JPH01280320A (en) * 1988-05-06 1989-11-10 Tel Sagami Ltd Semiconductor pressure oxidation

Also Published As

Publication number Publication date
JPS626342B2 (en) 1987-02-10

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