JPS5421171A - Manufacture for compound semiconductor device - Google Patents
Manufacture for compound semiconductor deviceInfo
- Publication number
- JPS5421171A JPS5421171A JP8638377A JP8638377A JPS5421171A JP S5421171 A JPS5421171 A JP S5421171A JP 8638377 A JP8638377 A JP 8638377A JP 8638377 A JP8638377 A JP 8638377A JP S5421171 A JPS5421171 A JP S5421171A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- manufacture
- semiconductor device
- vapor
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Feedback Control In General (AREA)
Abstract
PURPOSE: To form excellent oxide film on a compound semiconductor including As, by performing high temperature treatment under gas including As2O3 vapor.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8638377A JPS5421171A (en) | 1977-07-18 | 1977-07-18 | Manufacture for compound semiconductor device |
DE2830035A DE2830035C2 (en) | 1977-07-15 | 1978-07-07 | Method of preventing arsenic depletion in oxide films containing arsenic on a semiconductor device |
US05/923,689 US4194927A (en) | 1977-07-15 | 1978-07-11 | Selective thermal oxidation of As-containing compound semiconductor regions |
FR7820897A FR2397718A1 (en) | 1977-07-15 | 1978-07-12 | PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES |
GB7829825A GB2001048B (en) | 1977-07-15 | 1978-07-14 | Method of making semiconductor devices |
CA307,437A CA1104267A (en) | 1977-07-15 | 1978-07-14 | Method of making semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8638377A JPS5421171A (en) | 1977-07-18 | 1977-07-18 | Manufacture for compound semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5421171A true JPS5421171A (en) | 1979-02-17 |
JPS5436458B2 JPS5436458B2 (en) | 1979-11-09 |
Family
ID=13885345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8638377A Granted JPS5421171A (en) | 1977-07-15 | 1977-07-18 | Manufacture for compound semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5421171A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5826014A (en) * | 1981-07-31 | 1983-02-16 | Agency Of Ind Science & Technol | Formation of silicon nitride film |
-
1977
- 1977-07-18 JP JP8638377A patent/JPS5421171A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5826014A (en) * | 1981-07-31 | 1983-02-16 | Agency Of Ind Science & Technol | Formation of silicon nitride film |
JPS6310893B2 (en) * | 1981-07-31 | 1988-03-10 | Kogyo Gijutsuin |
Also Published As
Publication number | Publication date |
---|---|
JPS5436458B2 (en) | 1979-11-09 |
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