JPS53148389A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53148389A
JPS53148389A JP6365677A JP6365677A JPS53148389A JP S53148389 A JPS53148389 A JP S53148389A JP 6365677 A JP6365677 A JP 6365677A JP 6365677 A JP6365677 A JP 6365677A JP S53148389 A JPS53148389 A JP S53148389A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
eaves
oxide film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6365677A
Other languages
Japanese (ja)
Inventor
Sumio Yamamoto
Hikosuke Shibayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6365677A priority Critical patent/JPS53148389A/en
Publication of JPS53148389A publication Critical patent/JPS53148389A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form fine pattern less in the effect of thermal strain, by performing selective oxidation through the forming of double oxide film mask having eaves.
COPYRIGHT: (C)1978,JPO&Japio
JP6365677A 1977-05-31 1977-05-31 Manufacture for semiconductor device Pending JPS53148389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6365677A JPS53148389A (en) 1977-05-31 1977-05-31 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6365677A JPS53148389A (en) 1977-05-31 1977-05-31 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS53148389A true JPS53148389A (en) 1978-12-23

Family

ID=13235596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6365677A Pending JPS53148389A (en) 1977-05-31 1977-05-31 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53148389A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5663821A (en) * 1979-10-31 1981-05-30 Toko Inc Manufacture of zinc oxide film
US5714414A (en) * 1996-08-19 1998-02-03 Micron Technology, Inc. Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate
JPH1050818A (en) * 1996-06-26 1998-02-20 Lg Semicon Co Ltd Isolation film formation of semiconductor element
US5789306A (en) * 1996-04-18 1998-08-04 Micron Technology, Inc. Dual-masked field isolation
US6387777B1 (en) 1998-09-02 2002-05-14 Kelly T. Hurley Variable temperature LOCOS process
US7229895B2 (en) 2005-01-14 2007-06-12 Micron Technology, Inc Memory array buried digit line
US7247570B2 (en) 2004-08-19 2007-07-24 Micron Technology, Inc. Silicon pillars for vertical transistors
US7285812B2 (en) 2004-09-02 2007-10-23 Micron Technology, Inc. Vertical transistors
US7368344B2 (en) 2004-12-13 2008-05-06 Micron Technology, Inc. Methods of reducing floating body effect
US7371627B1 (en) 2005-05-13 2008-05-13 Micron Technology, Inc. Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
US7510954B1 (en) 2005-05-13 2009-03-31 Micron Technology, Inc. Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
US10515801B2 (en) 2007-06-04 2019-12-24 Micron Technology, Inc. Pitch multiplication using self-assembling materials

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5663821A (en) * 1979-10-31 1981-05-30 Toko Inc Manufacture of zinc oxide film
US6103020A (en) * 1996-04-18 2000-08-15 Micron Technology, Inc. Dual-masked field isolation
US5789306A (en) * 1996-04-18 1998-08-04 Micron Technology, Inc. Dual-masked field isolation
US5909630A (en) * 1996-04-18 1999-06-01 Micron Technology, Inc. Dual-masked isolation
JPH1050818A (en) * 1996-06-26 1998-02-20 Lg Semicon Co Ltd Isolation film formation of semiconductor element
US5989980A (en) * 1996-08-19 1999-11-23 Micron Technology, Inc. Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate
US5714414A (en) * 1996-08-19 1998-02-03 Micron Technology, Inc. Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate
US6387777B1 (en) 1998-09-02 2002-05-14 Kelly T. Hurley Variable temperature LOCOS process
US7413480B2 (en) 2004-08-19 2008-08-19 Micron Technology, Inc. Silicon pillars for vertical transistors
US8847298B2 (en) 2004-08-19 2014-09-30 Micron Technology, Inc. Pillars for vertical transistors
US7247570B2 (en) 2004-08-19 2007-07-24 Micron Technology, Inc. Silicon pillars for vertical transistors
US8629533B2 (en) 2004-08-19 2014-01-14 Micron Technology, Inc. Pillars for vertical transistors
US7285812B2 (en) 2004-09-02 2007-10-23 Micron Technology, Inc. Vertical transistors
US7521322B2 (en) 2004-09-02 2009-04-21 Micron Technology, Inc. Vertical transistors
US7368344B2 (en) 2004-12-13 2008-05-06 Micron Technology, Inc. Methods of reducing floating body effect
US7601608B2 (en) 2005-01-14 2009-10-13 Micron Technologies, Inc. Memory array buried digit line
US7768073B2 (en) 2005-01-14 2010-08-03 Micron Technology, Inc. Memory array buried digit line
US8102008B2 (en) 2005-01-14 2012-01-24 Micron Technology, Inc. Integrated circuit with buried digit line
US7368365B2 (en) 2005-01-14 2008-05-06 Wells David H Memory array buried digit line
US7229895B2 (en) 2005-01-14 2007-06-12 Micron Technology, Inc Memory array buried digit line
US7510954B1 (en) 2005-05-13 2009-03-31 Micron Technology, Inc. Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
US7371627B1 (en) 2005-05-13 2008-05-13 Micron Technology, Inc. Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
US7525141B1 (en) 2005-05-13 2009-04-28 Micron Technology, Inc. Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
US10515801B2 (en) 2007-06-04 2019-12-24 Micron Technology, Inc. Pitch multiplication using self-assembling materials

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