JPS53148389A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS53148389A JPS53148389A JP6365677A JP6365677A JPS53148389A JP S53148389 A JPS53148389 A JP S53148389A JP 6365677 A JP6365677 A JP 6365677A JP 6365677 A JP6365677 A JP 6365677A JP S53148389 A JPS53148389 A JP S53148389A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- eaves
- oxide film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form fine pattern less in the effect of thermal strain, by performing selective oxidation through the forming of double oxide film mask having eaves.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6365677A JPS53148389A (en) | 1977-05-31 | 1977-05-31 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6365677A JPS53148389A (en) | 1977-05-31 | 1977-05-31 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53148389A true JPS53148389A (en) | 1978-12-23 |
Family
ID=13235596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6365677A Pending JPS53148389A (en) | 1977-05-31 | 1977-05-31 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53148389A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5663821A (en) * | 1979-10-31 | 1981-05-30 | Toko Inc | Manufacture of zinc oxide film |
US5714414A (en) * | 1996-08-19 | 1998-02-03 | Micron Technology, Inc. | Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate |
JPH1050818A (en) * | 1996-06-26 | 1998-02-20 | Lg Semicon Co Ltd | Isolation film formation of semiconductor element |
US5789306A (en) * | 1996-04-18 | 1998-08-04 | Micron Technology, Inc. | Dual-masked field isolation |
US6387777B1 (en) | 1998-09-02 | 2002-05-14 | Kelly T. Hurley | Variable temperature LOCOS process |
US7229895B2 (en) | 2005-01-14 | 2007-06-12 | Micron Technology, Inc | Memory array buried digit line |
US7247570B2 (en) | 2004-08-19 | 2007-07-24 | Micron Technology, Inc. | Silicon pillars for vertical transistors |
US7285812B2 (en) | 2004-09-02 | 2007-10-23 | Micron Technology, Inc. | Vertical transistors |
US7368344B2 (en) | 2004-12-13 | 2008-05-06 | Micron Technology, Inc. | Methods of reducing floating body effect |
US7371627B1 (en) | 2005-05-13 | 2008-05-13 | Micron Technology, Inc. | Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines |
US7510954B1 (en) | 2005-05-13 | 2009-03-31 | Micron Technology, Inc. | Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines |
US10515801B2 (en) | 2007-06-04 | 2019-12-24 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
-
1977
- 1977-05-31 JP JP6365677A patent/JPS53148389A/en active Pending
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5663821A (en) * | 1979-10-31 | 1981-05-30 | Toko Inc | Manufacture of zinc oxide film |
US6103020A (en) * | 1996-04-18 | 2000-08-15 | Micron Technology, Inc. | Dual-masked field isolation |
US5789306A (en) * | 1996-04-18 | 1998-08-04 | Micron Technology, Inc. | Dual-masked field isolation |
US5909630A (en) * | 1996-04-18 | 1999-06-01 | Micron Technology, Inc. | Dual-masked isolation |
JPH1050818A (en) * | 1996-06-26 | 1998-02-20 | Lg Semicon Co Ltd | Isolation film formation of semiconductor element |
US5989980A (en) * | 1996-08-19 | 1999-11-23 | Micron Technology, Inc. | Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate |
US5714414A (en) * | 1996-08-19 | 1998-02-03 | Micron Technology, Inc. | Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate |
US6387777B1 (en) | 1998-09-02 | 2002-05-14 | Kelly T. Hurley | Variable temperature LOCOS process |
US7413480B2 (en) | 2004-08-19 | 2008-08-19 | Micron Technology, Inc. | Silicon pillars for vertical transistors |
US8847298B2 (en) | 2004-08-19 | 2014-09-30 | Micron Technology, Inc. | Pillars for vertical transistors |
US7247570B2 (en) | 2004-08-19 | 2007-07-24 | Micron Technology, Inc. | Silicon pillars for vertical transistors |
US8629533B2 (en) | 2004-08-19 | 2014-01-14 | Micron Technology, Inc. | Pillars for vertical transistors |
US7285812B2 (en) | 2004-09-02 | 2007-10-23 | Micron Technology, Inc. | Vertical transistors |
US7521322B2 (en) | 2004-09-02 | 2009-04-21 | Micron Technology, Inc. | Vertical transistors |
US7368344B2 (en) | 2004-12-13 | 2008-05-06 | Micron Technology, Inc. | Methods of reducing floating body effect |
US7601608B2 (en) | 2005-01-14 | 2009-10-13 | Micron Technologies, Inc. | Memory array buried digit line |
US7768073B2 (en) | 2005-01-14 | 2010-08-03 | Micron Technology, Inc. | Memory array buried digit line |
US8102008B2 (en) | 2005-01-14 | 2012-01-24 | Micron Technology, Inc. | Integrated circuit with buried digit line |
US7368365B2 (en) | 2005-01-14 | 2008-05-06 | Wells David H | Memory array buried digit line |
US7229895B2 (en) | 2005-01-14 | 2007-06-12 | Micron Technology, Inc | Memory array buried digit line |
US7510954B1 (en) | 2005-05-13 | 2009-03-31 | Micron Technology, Inc. | Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines |
US7371627B1 (en) | 2005-05-13 | 2008-05-13 | Micron Technology, Inc. | Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines |
US7525141B1 (en) | 2005-05-13 | 2009-04-28 | Micron Technology, Inc. | Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines |
US10515801B2 (en) | 2007-06-04 | 2019-12-24 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53148389A (en) | Manufacture for semiconductor device | |
JPS5431273A (en) | Manufacture of semiconductor device | |
JPS53115187A (en) | Semiconductor device | |
JPS5383467A (en) | Production of semiconductor device | |
JPS51150986A (en) | Fabrication method of semiconductor device | |
JPS5419367A (en) | Production of semiconductor device | |
JPS5435681A (en) | Alignment device | |
JPS5271978A (en) | Production of semiconductor device | |
JPS52153383A (en) | Preparation of semiconductor device | |
JPS5386177A (en) | Production of semiconductor device | |
JPS5424574A (en) | Manufacture for semiconductor device | |
JPS5338984A (en) | Manufacture of semiconductor device | |
JPS542666A (en) | Manufacture of semiconductor device | |
JPS5335386A (en) | Production of semiconductor device | |
JPS547879A (en) | Manufacture for semiconductor device | |
JPS5434755A (en) | Manufacture of semiconductor device | |
JPS53142870A (en) | Manufacture for semiconductor device | |
JPS52179A (en) | Method of fabricating semiconductor | |
JPS5363866A (en) | Production of semiconductor device | |
JPS544568A (en) | Semiconductor device and production of the same | |
JPS51118369A (en) | Manufacturing process for simiconduator unit | |
JPS5323579A (en) | Production of semiconductor device | |
JPS53117986A (en) | Production of semiconductor device | |
JPS52101968A (en) | Preparation of semiconductor device | |
JPS5315770A (en) | Production of semiconductor device |