JPS5663821A - Manufacture of zinc oxide film - Google Patents

Manufacture of zinc oxide film

Info

Publication number
JPS5663821A
JPS5663821A JP13994779A JP13994779A JPS5663821A JP S5663821 A JPS5663821 A JP S5663821A JP 13994779 A JP13994779 A JP 13994779A JP 13994779 A JP13994779 A JP 13994779A JP S5663821 A JPS5663821 A JP S5663821A
Authority
JP
Japan
Prior art keywords
vapor
crucible
gas
gas pressure
jar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13994779A
Other languages
Japanese (ja)
Inventor
Mitsuo Sakakura
Minoru Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP13994779A priority Critical patent/JPS5663821A/en
Publication of JPS5663821A publication Critical patent/JPS5663821A/en
Pending legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: To obtain a ZnO film of uniform quality by detecting the internal O2 gas pressure of a vapor deposition chamber and controlling the heating temp. of a crucible to keep the ratio of O2 gas to Zn vapor constant.
CONSTITUTION: The inside of bell jar 10 is held at a high evacuation, and O2 gas is introduced through suction pipe 11. On the other hand, Zn 13 in crucible 12 is vaporized by heating with heater 14, and the vapor is jetted into jar 10 through the nozzle of crucible 12 and reacted with the O2 gas in the plasma discharge region of high frequency discharge exciting coil 15 to produce ZnO. The internal O2 gas pressure of jar 10 is detected with detector 21, and according to the gas pressure a controller for heater 14 of crucible 12 is driven to adjust the heating temp. of heaters 23, 14. Thus, while keeping the ratio of O2 gas pressure to Zn vapor almost constant, the resulting ZnO is vapor deposited on substrate 17.
COPYRIGHT: (C)1981,JPO&Japio
JP13994779A 1979-10-31 1979-10-31 Manufacture of zinc oxide film Pending JPS5663821A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13994779A JPS5663821A (en) 1979-10-31 1979-10-31 Manufacture of zinc oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13994779A JPS5663821A (en) 1979-10-31 1979-10-31 Manufacture of zinc oxide film

Publications (1)

Publication Number Publication Date
JPS5663821A true JPS5663821A (en) 1981-05-30

Family

ID=15257376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13994779A Pending JPS5663821A (en) 1979-10-31 1979-10-31 Manufacture of zinc oxide film

Country Status (1)

Country Link
JP (1) JPS5663821A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS612363A (en) * 1984-06-14 1986-01-08 Mitsubishi Electric Corp Manufacture of semiconductor device
KR20010099144A (en) * 2001-09-05 2001-11-09 김영창 METHOD FOR CONTROLLING LUMINESCENCE PROPERTIES OF ZnO ACCORDING TO A TEMPERATURE OF DEPOSITION
JP2010261084A (en) * 2009-05-08 2010-11-18 Ibaraki Univ Method for producing zinc oxide transparent conductive film and production apparatus for performing the method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210866A (en) * 1975-07-15 1977-01-27 Matsushita Electric Ind Co Ltd Process for production of compound thin film
JPS53148389A (en) * 1977-05-31 1978-12-23 Fujitsu Ltd Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210866A (en) * 1975-07-15 1977-01-27 Matsushita Electric Ind Co Ltd Process for production of compound thin film
JPS53148389A (en) * 1977-05-31 1978-12-23 Fujitsu Ltd Manufacture for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS612363A (en) * 1984-06-14 1986-01-08 Mitsubishi Electric Corp Manufacture of semiconductor device
KR20010099144A (en) * 2001-09-05 2001-11-09 김영창 METHOD FOR CONTROLLING LUMINESCENCE PROPERTIES OF ZnO ACCORDING TO A TEMPERATURE OF DEPOSITION
JP2010261084A (en) * 2009-05-08 2010-11-18 Ibaraki Univ Method for producing zinc oxide transparent conductive film and production apparatus for performing the method

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