JPS56149306A - Formation of silicon nitride film - Google Patents

Formation of silicon nitride film

Info

Publication number
JPS56149306A
JPS56149306A JP5174580A JP5174580A JPS56149306A JP S56149306 A JPS56149306 A JP S56149306A JP 5174580 A JP5174580 A JP 5174580A JP 5174580 A JP5174580 A JP 5174580A JP S56149306 A JPS56149306 A JP S56149306A
Authority
JP
Japan
Prior art keywords
chamber
sif
sih
film
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5174580A
Other languages
Japanese (ja)
Inventor
Harushige Kurokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP5174580A priority Critical patent/JPS56149306A/en
Publication of JPS56149306A publication Critical patent/JPS56149306A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To always stabilize the characteristics of an Si-N film by using a gaseous mixture of SiF4, SiH4 and N2 or NH3 as a reactive gas when the Si-N film is formed on the surface of a semiconductor by a vapor phase growing method.
CONSTITUTION: Electrodes 1, 1 are set opposite to each other in reaction chamber 8, and Si substrates 3 with Al vapor-deposited are mounted on lower electrode 1. After evacuating chamber 8 through exhaust duct 5, a gaseous mixture of SiF4, SiH4 and N2 or NH3 is introduced into chamber 8 from pipe 6. At the same time, 400KHz high frequency voltage is applied between upper and lower electrodes 1, 1 from high frequency oscillator 2 to cause frequency plasma discharge. By keeping the interior of chamber 8 at 100W350°C with heater 4, Si-N films are stably formed on the surfaces of substrates 3.
COPYRIGHT: (C)1981,JPO&Japio
JP5174580A 1980-04-21 1980-04-21 Formation of silicon nitride film Pending JPS56149306A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5174580A JPS56149306A (en) 1980-04-21 1980-04-21 Formation of silicon nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5174580A JPS56149306A (en) 1980-04-21 1980-04-21 Formation of silicon nitride film

Publications (1)

Publication Number Publication Date
JPS56149306A true JPS56149306A (en) 1981-11-19

Family

ID=12895455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5174580A Pending JPS56149306A (en) 1980-04-21 1980-04-21 Formation of silicon nitride film

Country Status (1)

Country Link
JP (1) JPS56149306A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60190567A (en) * 1984-03-12 1985-09-28 Semiconductor Energy Lab Co Ltd Preparation of silicon nitride
JPS61159576A (en) * 1984-12-21 1986-07-19 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド Formation of silicon nitride film transparent to ultravioletrays
JPH01179710A (en) * 1988-01-08 1989-07-17 Nec Corp Production of insulating thin film
JPH05279838A (en) * 1991-12-24 1993-10-26 Internatl Business Mach Corp <Ibm> Formation of silicon nitride film and semiconductor device
US6410454B1 (en) 1997-06-10 2002-06-25 Mitsubishi Denki Kabushiki Method and apparatus for removing contaminants from the surface of a semiconductor wafer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60190567A (en) * 1984-03-12 1985-09-28 Semiconductor Energy Lab Co Ltd Preparation of silicon nitride
JPS61159576A (en) * 1984-12-21 1986-07-19 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド Formation of silicon nitride film transparent to ultravioletrays
JPH01179710A (en) * 1988-01-08 1989-07-17 Nec Corp Production of insulating thin film
JPH05279838A (en) * 1991-12-24 1993-10-26 Internatl Business Mach Corp <Ibm> Formation of silicon nitride film and semiconductor device
US6410454B1 (en) 1997-06-10 2002-06-25 Mitsubishi Denki Kabushiki Method and apparatus for removing contaminants from the surface of a semiconductor wafer

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