JPS56149306A - Formation of silicon nitride film - Google Patents
Formation of silicon nitride filmInfo
- Publication number
- JPS56149306A JPS56149306A JP5174580A JP5174580A JPS56149306A JP S56149306 A JPS56149306 A JP S56149306A JP 5174580 A JP5174580 A JP 5174580A JP 5174580 A JP5174580 A JP 5174580A JP S56149306 A JPS56149306 A JP S56149306A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- sif
- sih
- film
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To always stabilize the characteristics of an Si-N film by using a gaseous mixture of SiF4, SiH4 and N2 or NH3 as a reactive gas when the Si-N film is formed on the surface of a semiconductor by a vapor phase growing method.
CONSTITUTION: Electrodes 1, 1 are set opposite to each other in reaction chamber 8, and Si substrates 3 with Al vapor-deposited are mounted on lower electrode 1. After evacuating chamber 8 through exhaust duct 5, a gaseous mixture of SiF4, SiH4 and N2 or NH3 is introduced into chamber 8 from pipe 6. At the same time, 400KHz high frequency voltage is applied between upper and lower electrodes 1, 1 from high frequency oscillator 2 to cause frequency plasma discharge. By keeping the interior of chamber 8 at 100W350°C with heater 4, Si-N films are stably formed on the surfaces of substrates 3.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5174580A JPS56149306A (en) | 1980-04-21 | 1980-04-21 | Formation of silicon nitride film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5174580A JPS56149306A (en) | 1980-04-21 | 1980-04-21 | Formation of silicon nitride film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56149306A true JPS56149306A (en) | 1981-11-19 |
Family
ID=12895455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5174580A Pending JPS56149306A (en) | 1980-04-21 | 1980-04-21 | Formation of silicon nitride film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56149306A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60190567A (en) * | 1984-03-12 | 1985-09-28 | Semiconductor Energy Lab Co Ltd | Preparation of silicon nitride |
JPS61159576A (en) * | 1984-12-21 | 1986-07-19 | アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド | Formation of silicon nitride film transparent to ultravioletrays |
JPH01179710A (en) * | 1988-01-08 | 1989-07-17 | Nec Corp | Production of insulating thin film |
JPH05279838A (en) * | 1991-12-24 | 1993-10-26 | Internatl Business Mach Corp <Ibm> | Formation of silicon nitride film and semiconductor device |
US6410454B1 (en) | 1997-06-10 | 2002-06-25 | Mitsubishi Denki Kabushiki | Method and apparatus for removing contaminants from the surface of a semiconductor wafer |
-
1980
- 1980-04-21 JP JP5174580A patent/JPS56149306A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60190567A (en) * | 1984-03-12 | 1985-09-28 | Semiconductor Energy Lab Co Ltd | Preparation of silicon nitride |
JPS61159576A (en) * | 1984-12-21 | 1986-07-19 | アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド | Formation of silicon nitride film transparent to ultravioletrays |
JPH01179710A (en) * | 1988-01-08 | 1989-07-17 | Nec Corp | Production of insulating thin film |
JPH05279838A (en) * | 1991-12-24 | 1993-10-26 | Internatl Business Mach Corp <Ibm> | Formation of silicon nitride film and semiconductor device |
US6410454B1 (en) | 1997-06-10 | 2002-06-25 | Mitsubishi Denki Kabushiki | Method and apparatus for removing contaminants from the surface of a semiconductor wafer |
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