JPS54137973A - Formation method of plasma nitride - Google Patents

Formation method of plasma nitride

Info

Publication number
JPS54137973A
JPS54137973A JP4531278A JP4531278A JPS54137973A JP S54137973 A JPS54137973 A JP S54137973A JP 4531278 A JP4531278 A JP 4531278A JP 4531278 A JP4531278 A JP 4531278A JP S54137973 A JPS54137973 A JP S54137973A
Authority
JP
Japan
Prior art keywords
sih
immersion
active carbon
reaction
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4531278A
Other languages
Japanese (ja)
Inventor
Miyoko Shibata
Manabu Araoka
Takeo Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4531278A priority Critical patent/JPS54137973A/en
Publication of JPS54137973A publication Critical patent/JPS54137973A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To control the immersion of H2 in a reaction product by providing a substance adsorbing H2 such as active carbon in a reaction container, as to silicon nitride formation making use of plasma discharge.
CONSTITUTION: Reaction container 1 is evacuated 2 to produce a vacuum and NH3, N2, etc., are supplied 3 while SiH4 is also supplied from shower part 4. Then, Si substrate 9 is mounted on table 7 with a heating method outside of it, and active carbon 8 is installed closely. By coil 6, high-frequency discharge is started to maintain a reactin temperature. Next, NH3 and SiH4 made into plasma react to form Si3N4 on the substrate surface. In this reaction, H+ is produced; some of it becom H2 and the other is positively absorbed by active carbon to change into CxHy. As a result, the quantity of H+ in the container decreases gradually and gas efficiency becomes excellent to facilitate the dissolution of SiH4 and NH3, so that the immersion of H in Si3N4 will be a little. Applying a bias to substance 8 facilitates the absorption more and the immersion of H can be controlled by the voltage value.
COPYRIGHT: (C)1979,JPO&Japio
JP4531278A 1978-04-19 1978-04-19 Formation method of plasma nitride Pending JPS54137973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4531278A JPS54137973A (en) 1978-04-19 1978-04-19 Formation method of plasma nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4531278A JPS54137973A (en) 1978-04-19 1978-04-19 Formation method of plasma nitride

Publications (1)

Publication Number Publication Date
JPS54137973A true JPS54137973A (en) 1979-10-26

Family

ID=12715783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4531278A Pending JPS54137973A (en) 1978-04-19 1978-04-19 Formation method of plasma nitride

Country Status (1)

Country Link
JP (1) JPS54137973A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148458A (en) * 1982-03-01 1983-09-03 Stanley Electric Co Ltd Thin film transistor
JPS5996736A (en) * 1982-11-26 1984-06-04 Hitachi Ltd Semiconductor device
JPS63200539A (en) * 1987-02-02 1988-08-18 エイ・ティ・アンド・ティ・コーポレーション Manufacture of device containing silicon nitride film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148458A (en) * 1982-03-01 1983-09-03 Stanley Electric Co Ltd Thin film transistor
JPS5996736A (en) * 1982-11-26 1984-06-04 Hitachi Ltd Semiconductor device
JPS63200539A (en) * 1987-02-02 1988-08-18 エイ・ティ・アンド・ティ・コーポレーション Manufacture of device containing silicon nitride film

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