JPS54137973A - Formation method of plasma nitride - Google Patents
Formation method of plasma nitrideInfo
- Publication number
- JPS54137973A JPS54137973A JP4531278A JP4531278A JPS54137973A JP S54137973 A JPS54137973 A JP S54137973A JP 4531278 A JP4531278 A JP 4531278A JP 4531278 A JP4531278 A JP 4531278A JP S54137973 A JPS54137973 A JP S54137973A
- Authority
- JP
- Japan
- Prior art keywords
- sih
- immersion
- active carbon
- reaction
- supplied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To control the immersion of H2 in a reaction product by providing a substance adsorbing H2 such as active carbon in a reaction container, as to silicon nitride formation making use of plasma discharge.
CONSTITUTION: Reaction container 1 is evacuated 2 to produce a vacuum and NH3, N2, etc., are supplied 3 while SiH4 is also supplied from shower part 4. Then, Si substrate 9 is mounted on table 7 with a heating method outside of it, and active carbon 8 is installed closely. By coil 6, high-frequency discharge is started to maintain a reactin temperature. Next, NH3 and SiH4 made into plasma react to form Si3N4 on the substrate surface. In this reaction, H+ is produced; some of it becom H2 and the other is positively absorbed by active carbon to change into CxHy. As a result, the quantity of H+ in the container decreases gradually and gas efficiency becomes excellent to facilitate the dissolution of SiH4 and NH3, so that the immersion of H in Si3N4 will be a little. Applying a bias to substance 8 facilitates the absorption more and the immersion of H can be controlled by the voltage value.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4531278A JPS54137973A (en) | 1978-04-19 | 1978-04-19 | Formation method of plasma nitride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4531278A JPS54137973A (en) | 1978-04-19 | 1978-04-19 | Formation method of plasma nitride |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54137973A true JPS54137973A (en) | 1979-10-26 |
Family
ID=12715783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4531278A Pending JPS54137973A (en) | 1978-04-19 | 1978-04-19 | Formation method of plasma nitride |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54137973A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58148458A (en) * | 1982-03-01 | 1983-09-03 | Stanley Electric Co Ltd | Thin film transistor |
JPS5996736A (en) * | 1982-11-26 | 1984-06-04 | Hitachi Ltd | Semiconductor device |
JPS63200539A (en) * | 1987-02-02 | 1988-08-18 | エイ・ティ・アンド・ティ・コーポレーション | Manufacture of device containing silicon nitride film |
-
1978
- 1978-04-19 JP JP4531278A patent/JPS54137973A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58148458A (en) * | 1982-03-01 | 1983-09-03 | Stanley Electric Co Ltd | Thin film transistor |
JPS5996736A (en) * | 1982-11-26 | 1984-06-04 | Hitachi Ltd | Semiconductor device |
JPS63200539A (en) * | 1987-02-02 | 1988-08-18 | エイ・ティ・アンド・ティ・コーポレーション | Manufacture of device containing silicon nitride film |
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