JPS5578524A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5578524A JPS5578524A JP15288778A JP15288778A JPS5578524A JP S5578524 A JPS5578524 A JP S5578524A JP 15288778 A JP15288778 A JP 15288778A JP 15288778 A JP15288778 A JP 15288778A JP S5578524 A JPS5578524 A JP S5578524A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon
- gas
- silicon carbide
- reactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To obtain a homogeneous filmy silicon carbide or silicon coating without involving a cluster of carbon or silicon by processing silicon carbide obtained at high temperature through vapor phase process or decompression vapor phase process particularly.
CONSTITUTION: A substrate 1 kept on a board 2 adjacently is sealed in a reaction vessel 3. The vessel 3 is arranged to excite, react to or heat a reactive gas and substrate according to high-frequency energy of a high-frequency heating furnace 4 and is provided with a heater 4 on the outside. Exhaustion is carried out from 6 through a valve 7 and a vacuum pump 8. The reactive gas arrives at an inlet 9, however, it is chemically activated, decomposed or made reactive by high-frequency inductive energy 10 at a position apart from the substrate. Namely, silicified gas and carbide gas are chemically activated or made reactive here, and then silicon carbide or silicon coating is formed on the substrate 1.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15288778A JPS5578524A (en) | 1978-12-10 | 1978-12-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15288778A JPS5578524A (en) | 1978-12-10 | 1978-12-10 | Manufacture of semiconductor device |
Related Child Applications (8)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5560781A Division JPS56169321A (en) | 1981-04-15 | 1981-04-15 | Silicon carbide semiconductor |
JP5560681A Division JPS56169320A (en) | 1981-04-15 | 1981-04-15 | Silicon carbide semiconductor |
JP5560881A Division JPS56153727A (en) | 1981-04-15 | 1981-04-15 | Manufacture of semiconductor device |
JP57126046A Division JPS5825226A (en) | 1982-07-19 | 1982-07-19 | Plasma cvd unit |
JP57126047A Division JPS5825227A (en) | 1982-07-19 | 1982-07-19 | Manufacture of semiconductor device |
JP58048504A Division JPS5967625A (en) | 1983-03-23 | 1983-03-23 | Semiconductor |
JP62065998A Division JPS6366923A (en) | 1987-03-20 | 1987-03-20 | Continuous type semiconductor film forming device |
JP62065997A Division JPS6366922A (en) | 1987-03-20 | 1987-03-20 | Manufcture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5578524A true JPS5578524A (en) | 1980-06-13 |
JPS6237527B2 JPS6237527B2 (en) | 1987-08-13 |
Family
ID=15550286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15288778A Granted JPS5578524A (en) | 1978-12-10 | 1978-12-10 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5578524A (en) |
Cited By (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56169320A (en) * | 1981-04-15 | 1981-12-26 | Shunpei Yamazaki | Silicon carbide semiconductor |
JPS5742331A (en) * | 1980-08-26 | 1982-03-09 | Canon Inc | Manufacture for deposited film |
JPS5743413A (en) * | 1980-05-19 | 1982-03-11 | Energy Conversion Devices Inc | Semiconductor element and method of producing same |
JPS5787120A (en) * | 1980-11-20 | 1982-05-31 | Matsushita Electric Ind Co Ltd | Method and device for plasma cvd |
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
JPS57162423A (en) * | 1981-03-16 | 1982-10-06 | Atlantic Richfield Co | Continuously depositing device |
JPS57194521A (en) * | 1981-05-25 | 1982-11-30 | Sekisui Chem Co Ltd | Manufacture of thin film semiconductor |
JPS5821817A (en) * | 1981-07-31 | 1983-02-08 | Nippon Telegr & Teleph Corp <Ntt> | Apparatus for forming amorphous multiplayer thin film |
JPS5850733A (en) * | 1981-09-21 | 1983-03-25 | Fuji Electric Corp Res & Dev Ltd | Mass-production apparatus of thin film for solar cell |
JPS5860537U (en) * | 1981-10-21 | 1983-04-23 | 市光工業株式会社 | Vehicle lights |
JPS5870524A (en) * | 1981-09-28 | 1983-04-27 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Method of depositing body material on base and system therefor |
JPS5893322A (en) * | 1981-11-30 | 1983-06-03 | Semiconductor Energy Lab Co Ltd | Manufacturing apparatus for semiconductor device |
JPS5893321A (en) * | 1981-11-30 | 1983-06-03 | Semiconductor Energy Lab Co Ltd | Manufacturing apparatus for semiconductor device |
JPS58174570A (en) * | 1982-03-29 | 1983-10-13 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Glow discharge deposition device containing non-horizontally placed cathode |
JPS58190810A (en) * | 1983-03-16 | 1983-11-07 | Yoshihiro Hamakawa | Manufacture of p type amorphous silicon carbide |
JPS5916328A (en) * | 1982-07-19 | 1984-01-27 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction device |
JPS5916329A (en) * | 1982-07-19 | 1984-01-27 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction device |
JPS5941470A (en) * | 1982-08-31 | 1984-03-07 | Shimadzu Corp | Multi-chamber type thin film fabricating apparatus |
JPS5952835A (en) * | 1982-09-20 | 1984-03-27 | Semiconductor Energy Lab Co Ltd | Plasma vapor reactor |
JPS5958820A (en) * | 1982-09-28 | 1984-04-04 | Matsushita Electronics Corp | Equipment for vapor phase epitaxial growth |
JPS59100516A (en) * | 1982-11-12 | 1984-06-09 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Apparatus and assembly for producing photocell element |
JPS59167013A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Plasma cvd equipment |
JPS59167012A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Plasma cvd equipment |
JPS6010681A (en) * | 1983-06-30 | 1985-01-19 | Canon Inc | Device for manufacturing photoelectric converting member |
JPS60131970A (en) * | 1983-12-20 | 1985-07-13 | Canon Inc | Formation of deposited film |
JPS6123760A (en) * | 1984-07-09 | 1986-02-01 | Canon Inc | Apparatus for forming accumulated film containing silicon atom |
JPS62112318A (en) * | 1985-11-12 | 1987-05-23 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPS62118520A (en) * | 1985-11-18 | 1987-05-29 | Semiconductor Energy Lab Co Ltd | Film formation by electronic cyclotron resonance |
JPS62167885A (en) * | 1986-11-19 | 1987-07-24 | Semiconductor Energy Lab Co Ltd | Production of composite body having carbon film |
JPH01157520A (en) * | 1988-11-18 | 1989-06-20 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction |
JPH02283078A (en) * | 1989-05-15 | 1990-11-20 | Semiconductor Energy Lab Co Ltd | Light emitting element |
JPH0562919A (en) * | 1980-10-24 | 1993-03-12 | Semiconductor Energy Lab Co Ltd | Semiamorphous semiconductor material |
JPH05251340A (en) * | 1991-06-28 | 1993-09-28 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPH05251356A (en) * | 1991-11-06 | 1993-09-28 | Semiconductor Energy Lab Co Ltd | Formation method of film |
JPH05304096A (en) * | 1991-11-06 | 1993-11-16 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPH05343714A (en) * | 1991-12-24 | 1993-12-24 | Kanegafuchi Chem Ind Co Ltd | Manufacture of amorphous silicon photoelectric element |
JPH0697473A (en) * | 1992-05-06 | 1994-04-08 | Kanegafuchi Chem Ind Co Ltd | Fabrication of amorphous silicon photoelectric device |
JPH06101047A (en) * | 1993-03-30 | 1994-04-12 | Semiconductor Energy Lab Co Ltd | Carbon coating film containing silicon and its production |
JPH0769613A (en) * | 1992-08-25 | 1995-03-14 | Semiconductor Energy Lab Co Ltd | Formation of material composed mainly of carbon |
JPH0774118A (en) * | 1994-07-25 | 1995-03-17 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPH0774117A (en) * | 1994-07-25 | 1995-03-17 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
US5976259A (en) * | 1985-02-14 | 1999-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
US6043105A (en) * | 1985-05-07 | 2000-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor sensitive devices |
US6180991B1 (en) | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
US6221701B1 (en) | 1984-05-18 | 2001-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
US6346716B1 (en) | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
JP2010040971A (en) * | 2008-08-08 | 2010-02-18 | Chikao Kimura | Method of forming thin film semiconductor layer |
-
1978
- 1978-12-10 JP JP15288778A patent/JPS5578524A/en active Granted
Non-Patent Citations (2)
Title |
---|
APPLIED PHYSICS LETTERS=1978 * |
PHILOS MAG=1977 * |
Cited By (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5743413A (en) * | 1980-05-19 | 1982-03-11 | Energy Conversion Devices Inc | Semiconductor element and method of producing same |
JPS6122622A (en) * | 1980-05-19 | 1986-01-31 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Method and device for producing photovoltaic power panel |
JPH0355977B2 (en) * | 1980-05-19 | 1991-08-27 | ||
JPS6236633B2 (en) * | 1980-05-19 | 1987-08-07 | Enaajii Konbaajon Debaisesu Inc | |
JPS6319210B2 (en) * | 1980-08-26 | 1988-04-21 | Canon Kk | |
JPS5742331A (en) * | 1980-08-26 | 1982-03-09 | Canon Inc | Manufacture for deposited film |
JPH0562919A (en) * | 1980-10-24 | 1993-03-12 | Semiconductor Energy Lab Co Ltd | Semiamorphous semiconductor material |
JPS5787120A (en) * | 1980-11-20 | 1982-05-31 | Matsushita Electric Ind Co Ltd | Method and device for plasma cvd |
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
JPS6148276B2 (en) * | 1980-12-03 | 1986-10-23 | Kanegafuchi Kagaku Kogyo Kk | |
JPS57162423A (en) * | 1981-03-16 | 1982-10-06 | Atlantic Richfield Co | Continuously depositing device |
JPS6236632B2 (en) * | 1981-04-15 | 1987-08-07 | Shunpei Yamazaki | |
JPS56169320A (en) * | 1981-04-15 | 1981-12-26 | Shunpei Yamazaki | Silicon carbide semiconductor |
JPS57194521A (en) * | 1981-05-25 | 1982-11-30 | Sekisui Chem Co Ltd | Manufacture of thin film semiconductor |
JPS5821817A (en) * | 1981-07-31 | 1983-02-08 | Nippon Telegr & Teleph Corp <Ntt> | Apparatus for forming amorphous multiplayer thin film |
JPS5850733A (en) * | 1981-09-21 | 1983-03-25 | Fuji Electric Corp Res & Dev Ltd | Mass-production apparatus of thin film for solar cell |
JPH0338731B2 (en) * | 1981-09-28 | 1991-06-11 | Enaajii Konbaajon Debaisesu Inc | |
JPS5870524A (en) * | 1981-09-28 | 1983-04-27 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Method of depositing body material on base and system therefor |
JPS5860537U (en) * | 1981-10-21 | 1983-04-23 | 市光工業株式会社 | Vehicle lights |
JPH0337730B2 (en) * | 1981-11-30 | 1991-06-06 | Handotai Energy Kenkyusho | |
JPS5893322A (en) * | 1981-11-30 | 1983-06-03 | Semiconductor Energy Lab Co Ltd | Manufacturing apparatus for semiconductor device |
JPS5893321A (en) * | 1981-11-30 | 1983-06-03 | Semiconductor Energy Lab Co Ltd | Manufacturing apparatus for semiconductor device |
JPH0370367B2 (en) * | 1981-11-30 | 1991-11-07 | Handotai Energy Kenkyusho | |
JPH0468390B2 (en) * | 1982-03-29 | 1992-11-02 | Enaajii Konbaajon Debaisesu Inc | |
JPS58174570A (en) * | 1982-03-29 | 1983-10-13 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Glow discharge deposition device containing non-horizontally placed cathode |
JPH0522375B2 (en) * | 1982-07-19 | 1993-03-29 | Handotai Energy Kenkyusho | |
JPS5916329A (en) * | 1982-07-19 | 1984-01-27 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction device |
JPS5916328A (en) * | 1982-07-19 | 1984-01-27 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction device |
USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
US6028264A (en) * | 1982-08-24 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of carbon |
USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
JPS5941470A (en) * | 1982-08-31 | 1984-03-07 | Shimadzu Corp | Multi-chamber type thin film fabricating apparatus |
JPH0246670B2 (en) * | 1982-08-31 | 1990-10-16 | Shimadzu Corp | |
JPH0436449B2 (en) * | 1982-09-20 | 1992-06-16 | Handotai Energy Kenkyusho | |
JPS5952835A (en) * | 1982-09-20 | 1984-03-27 | Semiconductor Energy Lab Co Ltd | Plasma vapor reactor |
JPS5958820A (en) * | 1982-09-28 | 1984-04-04 | Matsushita Electronics Corp | Equipment for vapor phase epitaxial growth |
JPS59100516A (en) * | 1982-11-12 | 1984-06-09 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Apparatus and assembly for producing photocell element |
US6346716B1 (en) | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
US6180991B1 (en) | 1982-12-23 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor having low concentration of phosphorous |
JPS59167013A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Plasma cvd equipment |
JPH0436453B2 (en) * | 1983-03-12 | 1992-06-16 | Kogyo Gijutsuin | |
JPH0436452B2 (en) * | 1983-03-12 | 1992-06-16 | Kogyo Gijutsuin | |
JPS59167012A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Plasma cvd equipment |
JPS58190810A (en) * | 1983-03-16 | 1983-11-07 | Yoshihiro Hamakawa | Manufacture of p type amorphous silicon carbide |
JPS6010681A (en) * | 1983-06-30 | 1985-01-19 | Canon Inc | Device for manufacturing photoelectric converting member |
US6503771B1 (en) | 1983-08-22 | 2003-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor photoelectrically sensitive device |
JPS60131970A (en) * | 1983-12-20 | 1985-07-13 | Canon Inc | Formation of deposited film |
JPH0517312B2 (en) * | 1983-12-20 | 1993-03-08 | Canon Kk | |
US6635520B1 (en) | 1984-05-18 | 2003-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Operation method of semiconductor devices |
US6734499B1 (en) | 1984-05-18 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Operation method of semiconductor devices |
US6680486B1 (en) | 1984-05-18 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
US6660574B1 (en) | 1984-05-18 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a semiconductor device including recombination center neutralizer |
US6221701B1 (en) | 1984-05-18 | 2001-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and its manufacturing method |
JPH0545673B2 (en) * | 1984-07-09 | 1993-07-09 | Canon Kk | |
JPS6123760A (en) * | 1984-07-09 | 1986-02-01 | Canon Inc | Apparatus for forming accumulated film containing silicon atom |
US6113701A (en) * | 1985-02-14 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
US5976259A (en) * | 1985-02-14 | 1999-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
US6043105A (en) * | 1985-05-07 | 2000-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor sensitive devices |
JPS62112318A (en) * | 1985-11-12 | 1987-05-23 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JP2654433B2 (en) * | 1985-11-12 | 1997-09-17 | 株式会社 半導体エネルギー研究所 | Silicon semiconductor fabrication method |
JPS62118520A (en) * | 1985-11-18 | 1987-05-29 | Semiconductor Energy Lab Co Ltd | Film formation by electronic cyclotron resonance |
JPH0427690B2 (en) * | 1986-11-19 | 1992-05-12 | Handotai Energy Kenkyusho | |
JPS62167885A (en) * | 1986-11-19 | 1987-07-24 | Semiconductor Energy Lab Co Ltd | Production of composite body having carbon film |
JPH0522376B2 (en) * | 1988-11-18 | 1993-03-29 | Handotai Energy Kenkyusho | |
JPH01157520A (en) * | 1988-11-18 | 1989-06-20 | Semiconductor Energy Lab Co Ltd | Plasma vapor reaction |
JPH02283078A (en) * | 1989-05-15 | 1990-11-20 | Semiconductor Energy Lab Co Ltd | Light emitting element |
JPH05251340A (en) * | 1991-06-28 | 1993-09-28 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPH05304096A (en) * | 1991-11-06 | 1993-11-16 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPH05251356A (en) * | 1991-11-06 | 1993-09-28 | Semiconductor Energy Lab Co Ltd | Formation method of film |
JPH05343714A (en) * | 1991-12-24 | 1993-12-24 | Kanegafuchi Chem Ind Co Ltd | Manufacture of amorphous silicon photoelectric element |
JPH0697473A (en) * | 1992-05-06 | 1994-04-08 | Kanegafuchi Chem Ind Co Ltd | Fabrication of amorphous silicon photoelectric device |
JPH0769613A (en) * | 1992-08-25 | 1995-03-14 | Semiconductor Energy Lab Co Ltd | Formation of material composed mainly of carbon |
JPH06101047A (en) * | 1993-03-30 | 1994-04-12 | Semiconductor Energy Lab Co Ltd | Carbon coating film containing silicon and its production |
JPH0774117A (en) * | 1994-07-25 | 1995-03-17 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JPH0774118A (en) * | 1994-07-25 | 1995-03-17 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
JP2010040971A (en) * | 2008-08-08 | 2010-02-18 | Chikao Kimura | Method of forming thin film semiconductor layer |
Also Published As
Publication number | Publication date |
---|---|
JPS6237527B2 (en) | 1987-08-13 |
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