JPS56158420A - Vapor growth device - Google Patents

Vapor growth device

Info

Publication number
JPS56158420A
JPS56158420A JP6428580A JP6428580A JPS56158420A JP S56158420 A JPS56158420 A JP S56158420A JP 6428580 A JP6428580 A JP 6428580A JP 6428580 A JP6428580 A JP 6428580A JP S56158420 A JPS56158420 A JP S56158420A
Authority
JP
Japan
Prior art keywords
pipe
vapor growth
reaction
heaters
valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6428580A
Other languages
Japanese (ja)
Inventor
Natsuo Tsubouchi
Hiroji Harada
Shigeji Kinoshita
Wataru Wakamiya
Sumio Nomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6428580A priority Critical patent/JPS56158420A/en
Publication of JPS56158420A publication Critical patent/JPS56158420A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To perform stable vapor growth by providing a heating device at the external circumference of a gas supply pipe wherein the growth of harmful substances at a piping system is prevented. CONSTITUTION:A pipe 4 is exhausted 9 by closing valves 3a-3c and by opening a valve 14. With the valves operated, reaction gas is sent from bombs 5, 6 to a reaction pipe 1 kept at high temperature and decompressed by heaters 2 and a pump 9 after closing the valve 14 and Si3N4 is formed on an Si substrate. All processes are done by heating the pipe 4 by heaters 12. Accordingly, residual moisture during the suspension of operation is removed at the initial exhaustion and harmful substances such as Si(OH)4 or the like will not be generated. Furthermore, the pipe is heated at 150-200 deg.C to prevent the invasion of moisture in the pipe and the gas sent to the reaction pipe 1 is also previously heated to mitigate the temperature slope and stable vapor growth can be performed.
JP6428580A 1980-05-12 1980-05-12 Vapor growth device Pending JPS56158420A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6428580A JPS56158420A (en) 1980-05-12 1980-05-12 Vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6428580A JPS56158420A (en) 1980-05-12 1980-05-12 Vapor growth device

Publications (1)

Publication Number Publication Date
JPS56158420A true JPS56158420A (en) 1981-12-07

Family

ID=13253803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6428580A Pending JPS56158420A (en) 1980-05-12 1980-05-12 Vapor growth device

Country Status (1)

Country Link
JP (1) JPS56158420A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176544U (en) * 1984-04-28 1985-11-22 沖電気工業株式会社 Thin film forming equipment
JPS6222420A (en) * 1985-07-23 1987-01-30 Canon Inc Formation device for deposited film
JPH0232533A (en) * 1988-07-22 1990-02-02 Nec Corp Gaseous phase growth device
CN102776559A (en) * 2011-05-13 2012-11-14 特力生有限公司 Method for conveying ammonia gas

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228258A (en) * 1975-08-28 1977-03-03 Nec Corp Method for growth of crystals from liquid phase

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228258A (en) * 1975-08-28 1977-03-03 Nec Corp Method for growth of crystals from liquid phase

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176544U (en) * 1984-04-28 1985-11-22 沖電気工業株式会社 Thin film forming equipment
JPS6222420A (en) * 1985-07-23 1987-01-30 Canon Inc Formation device for deposited film
JPH0232533A (en) * 1988-07-22 1990-02-02 Nec Corp Gaseous phase growth device
CN102776559A (en) * 2011-05-13 2012-11-14 特力生有限公司 Method for conveying ammonia gas

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