JPS5710919A - High pressure heating device - Google Patents

High pressure heating device

Info

Publication number
JPS5710919A
JPS5710919A JP8700580A JP8700580A JPS5710919A JP S5710919 A JPS5710919 A JP S5710919A JP 8700580 A JP8700580 A JP 8700580A JP 8700580 A JP8700580 A JP 8700580A JP S5710919 A JPS5710919 A JP S5710919A
Authority
JP
Japan
Prior art keywords
heating device
reaction tube
wafer
accuracy
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8700580A
Other languages
Japanese (ja)
Inventor
Makoto Hirayama
Hirokazu Miyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8700580A priority Critical patent/JPS5710919A/en
Publication of JPS5710919A publication Critical patent/JPS5710919A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Furnace Details (AREA)

Abstract

PURPOSE:To reduce a processing time and improve the accuracy of processing by a method wherein a high frequency heating device or a lamp is arranged in such a way as it covers a reaction tube installed in a pressurizing tank of a high pressure heating device. CONSTITUTION:Silicon reaction tube 2 (3 is a sealing cap) for use in storing Si wafer 4 placed on a Si coated carbon board 7 is arranged in a metalic pressurizing tank 1 keeping its interior pressure higher than an atmospheric pressure. High frequency heating coil 6 (or heating lamp) 6 is installed around the reaction tube 2 to perform an oxidation and/or diffusion of Si wafer 4 or heat treatment such as annealing etc. Thus, a processing time may be reduced as compared to that performed by a resistance heating, as well as the accuracy of heat treatment may be improved, resulting in making a superior characteristic of the component element.
JP8700580A 1980-06-23 1980-06-23 High pressure heating device Pending JPS5710919A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8700580A JPS5710919A (en) 1980-06-23 1980-06-23 High pressure heating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8700580A JPS5710919A (en) 1980-06-23 1980-06-23 High pressure heating device

Publications (1)

Publication Number Publication Date
JPS5710919A true JPS5710919A (en) 1982-01-20

Family

ID=13902792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8700580A Pending JPS5710919A (en) 1980-06-23 1980-06-23 High pressure heating device

Country Status (1)

Country Link
JP (1) JPS5710919A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01280311A (en) * 1988-05-06 1989-11-10 Matsushita Electron Corp Heating furnace
JPH0337200A (en) * 1989-06-30 1991-02-18 Matsushita Electric Ind Co Ltd Method for doping and inorganic crystal material of nonmetal

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4997940A (en) * 1973-01-26 1974-09-17
JPS5143718U (en) * 1974-09-27 1976-03-31
JPS5233954A (en) * 1975-09-12 1977-03-15 Mitsubishi Rayon Co Method of producing translucent film molded article

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4997940A (en) * 1973-01-26 1974-09-17
JPS5143718U (en) * 1974-09-27 1976-03-31
JPS5233954A (en) * 1975-09-12 1977-03-15 Mitsubishi Rayon Co Method of producing translucent film molded article

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01280311A (en) * 1988-05-06 1989-11-10 Matsushita Electron Corp Heating furnace
JPH0337200A (en) * 1989-06-30 1991-02-18 Matsushita Electric Ind Co Ltd Method for doping and inorganic crystal material of nonmetal

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