JPS55163848A - Manufacture of semiconductor device and its manufacturing device - Google Patents

Manufacture of semiconductor device and its manufacturing device

Info

Publication number
JPS55163848A
JPS55163848A JP7093379A JP7093379A JPS55163848A JP S55163848 A JPS55163848 A JP S55163848A JP 7093379 A JP7093379 A JP 7093379A JP 7093379 A JP7093379 A JP 7093379A JP S55163848 A JPS55163848 A JP S55163848A
Authority
JP
Japan
Prior art keywords
gas
valve
supplied
high frequency
frequency induction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7093379A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP7093379A priority Critical patent/JPS55163848A/en
Publication of JPS55163848A publication Critical patent/JPS55163848A/en
Priority to JP2066270A priority patent/JPH069197B2/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To enable manufacture of a semiconductor device at low temperature in a method of manufacturing an oxide film including halogen elements such as chlorine or the like by activating or decomposing gas including halogen elements with high frequency induction energy, mixing the gas with acidic gas and oxidizing a semiconductor. CONSTITUTION:A semiconductor wafer 1 is placed on a boat 2, which is then installed in a reaction furnace 3. Gas including halogen element is supplied from a valve 11, acidic gas is supplied from a valve 12, inert gas is supplied from a valve 13, and high frequency induction annealing gas (H2, He) is supplied from a valve 18, and mixture gas is supplied from a valve 14 to a reaction furnace 3. The mixture gas is activated or decomposed in a high frequency induction furnace 6, and oxidized in a resistance heating furnace 7, and an oxide film is formed on a semiconductor wafer 1.
JP7093379A 1979-06-06 1979-06-06 Manufacture of semiconductor device and its manufacturing device Pending JPS55163848A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7093379A JPS55163848A (en) 1979-06-06 1979-06-06 Manufacture of semiconductor device and its manufacturing device
JP2066270A JPH069197B2 (en) 1979-06-06 1990-03-16 Gate insulating film fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7093379A JPS55163848A (en) 1979-06-06 1979-06-06 Manufacture of semiconductor device and its manufacturing device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2066270A Division JPH069197B2 (en) 1979-06-06 1990-03-16 Gate insulating film fabrication method

Publications (1)

Publication Number Publication Date
JPS55163848A true JPS55163848A (en) 1980-12-20

Family

ID=13445798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7093379A Pending JPS55163848A (en) 1979-06-06 1979-06-06 Manufacture of semiconductor device and its manufacturing device

Country Status (1)

Country Link
JP (1) JPS55163848A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842239A (en) * 1981-09-07 1983-03-11 Semiconductor Energy Lab Co Ltd Plasma oxidization
JPS62174923A (en) * 1986-01-29 1987-07-31 Hitachi Ltd Formation of sheet type thin film and device for the same
JPH03129736A (en) * 1979-06-06 1991-06-03 Semiconductor Energy Lab Co Ltd Manufacture of oxide film
JPH07130491A (en) * 1993-10-29 1995-05-19 Nichimen Denshi Koken Kk Mixed type rf plasma generating device
JPH07326494A (en) * 1992-11-04 1995-12-12 Novellus Syst Inc Plasma process device
US6607947B1 (en) 1990-05-29 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
US7998801B2 (en) 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03129736A (en) * 1979-06-06 1991-06-03 Semiconductor Energy Lab Co Ltd Manufacture of oxide film
JPH069197B2 (en) * 1979-06-06 1994-02-02 株式会社半導体エネルギー研究所 Gate insulating film fabrication method
JPS5842239A (en) * 1981-09-07 1983-03-11 Semiconductor Energy Lab Co Ltd Plasma oxidization
JPS62174923A (en) * 1986-01-29 1987-07-31 Hitachi Ltd Formation of sheet type thin film and device for the same
JPH0693452B2 (en) * 1986-01-29 1994-11-16 株式会社日立製作所 Single-wafer thin film forming method and thin film forming apparatus
US6607947B1 (en) 1990-05-29 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
US7355202B2 (en) 1990-05-29 2008-04-08 Semiconductor Energy Co., Ltd. Thin-film transistor
JPH07326494A (en) * 1992-11-04 1995-12-12 Novellus Syst Inc Plasma process device
JPH07130491A (en) * 1993-10-29 1995-05-19 Nichimen Denshi Koken Kk Mixed type rf plasma generating device
US7998801B2 (en) 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer

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