JPS5575240A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5575240A JPS5575240A JP14937078A JP14937078A JPS5575240A JP S5575240 A JPS5575240 A JP S5575240A JP 14937078 A JP14937078 A JP 14937078A JP 14937078 A JP14937078 A JP 14937078A JP S5575240 A JPS5575240 A JP S5575240A
- Authority
- JP
- Japan
- Prior art keywords
- film
- platinum
- semiconductor device
- heat
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a stable metal silicide layer having high reproducibility in a semiconductor device by coating a metal film on a silicon substrate and laminating a heat resistant layer thereon, and heat treating it.
CONSTITUTION: In case that a silicon substrate is reacted with a platinum film by a heat treatment to thereby form a platinum silicide layer, when an SiO2 or Si3N4 film is formed on the platinum film and then heat treated, the platinum silicide film is not oxidized even if air is mixed in the atmospheric gas in the vicinity of the inlet of a furnace. Accordingly, it can largely reduced the contacting resistance therebetween to thereby provide a stable alloy layer. This can also be adapted for molybdenium, tungsten, titanium, etc. in addition to the platinum.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14937078A JPS5575240A (en) | 1978-12-01 | 1978-12-01 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14937078A JPS5575240A (en) | 1978-12-01 | 1978-12-01 | Method of fabricating semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5575240A true JPS5575240A (en) | 1980-06-06 |
Family
ID=15473644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14937078A Pending JPS5575240A (en) | 1978-12-01 | 1978-12-01 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5575240A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57122540A (en) * | 1980-12-09 | 1982-07-30 | Fairchild Camera Instr Co | Multilayer metallic silicide mutual wire for integrated circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5242032A (en) * | 1975-09-29 | 1977-04-01 | Hitachi Ltd | Data processing unit |
JPS52141565A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor unit |
-
1978
- 1978-12-01 JP JP14937078A patent/JPS5575240A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5242032A (en) * | 1975-09-29 | 1977-04-01 | Hitachi Ltd | Data processing unit |
JPS52141565A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor unit |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57122540A (en) * | 1980-12-09 | 1982-07-30 | Fairchild Camera Instr Co | Multilayer metallic silicide mutual wire for integrated circuit |
JPH0219974B2 (en) * | 1980-12-09 | 1990-05-07 | Fueachairudo Kamera Endo Insutsurumento Corp |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5748246A (en) | Manufacture of semiconductor device | |
JPS57211267A (en) | Semiconductor device and manufacture thereof | |
JPS5430777A (en) | Manufacture of semiconductor device | |
JPS57192846A (en) | Humidity sensor and manufacture thereof | |
JPS5575240A (en) | Method of fabricating semiconductor device | |
JPS53124091A (en) | Solid state electron device and its manufacture | |
JPS5445583A (en) | Manufacture for semiconductor device | |
JPS5516425A (en) | Semiconductor device | |
JPS5632747A (en) | Semiconductor device | |
JPS55103740A (en) | Semiconductor device | |
JPS52147992A (en) | Manufacture of semiconductor device | |
JPS5478659A (en) | Menufacture of semiconductor device | |
JPS5671943A (en) | Oxide film coating of compound semiconductor device | |
JPS55153329A (en) | Manufacture of semiconductor device | |
JPS5776832A (en) | Method for forming palladium silicide | |
JPS5568653A (en) | Manufacturing method of semiconductor device | |
JPS5635471A (en) | Manufacture of semiconductor device | |
JPS533066A (en) | Electrode formation method | |
JPS6425409A (en) | Junction formation of metallic silicide | |
JPS54133088A (en) | Semiconductor device | |
JPS5245270A (en) | Semiconductor device | |
JPS55138256A (en) | Manufacture of semiconductor device | |
JPS543470A (en) | Etching method | |
JPS5460556A (en) | Manufacture of semiconductor devive containing gold wiring layer | |
JPS57210660A (en) | Static ram |