JPS5575240A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5575240A
JPS5575240A JP14937078A JP14937078A JPS5575240A JP S5575240 A JPS5575240 A JP S5575240A JP 14937078 A JP14937078 A JP 14937078A JP 14937078 A JP14937078 A JP 14937078A JP S5575240 A JPS5575240 A JP S5575240A
Authority
JP
Japan
Prior art keywords
film
platinum
semiconductor device
heat
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14937078A
Other languages
Japanese (ja)
Inventor
Masaru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14937078A priority Critical patent/JPS5575240A/en
Publication of JPS5575240A publication Critical patent/JPS5575240A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a stable metal silicide layer having high reproducibility in a semiconductor device by coating a metal film on a silicon substrate and laminating a heat resistant layer thereon, and heat treating it.
CONSTITUTION: In case that a silicon substrate is reacted with a platinum film by a heat treatment to thereby form a platinum silicide layer, when an SiO2 or Si3N4 film is formed on the platinum film and then heat treated, the platinum silicide film is not oxidized even if air is mixed in the atmospheric gas in the vicinity of the inlet of a furnace. Accordingly, it can largely reduced the contacting resistance therebetween to thereby provide a stable alloy layer. This can also be adapted for molybdenium, tungsten, titanium, etc. in addition to the platinum.
COPYRIGHT: (C)1980,JPO&Japio
JP14937078A 1978-12-01 1978-12-01 Method of fabricating semiconductor device Pending JPS5575240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14937078A JPS5575240A (en) 1978-12-01 1978-12-01 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14937078A JPS5575240A (en) 1978-12-01 1978-12-01 Method of fabricating semiconductor device

Publications (1)

Publication Number Publication Date
JPS5575240A true JPS5575240A (en) 1980-06-06

Family

ID=15473644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14937078A Pending JPS5575240A (en) 1978-12-01 1978-12-01 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS5575240A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122540A (en) * 1980-12-09 1982-07-30 Fairchild Camera Instr Co Multilayer metallic silicide mutual wire for integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242032A (en) * 1975-09-29 1977-04-01 Hitachi Ltd Data processing unit
JPS52141565A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242032A (en) * 1975-09-29 1977-04-01 Hitachi Ltd Data processing unit
JPS52141565A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122540A (en) * 1980-12-09 1982-07-30 Fairchild Camera Instr Co Multilayer metallic silicide mutual wire for integrated circuit
JPH0219974B2 (en) * 1980-12-09 1990-05-07 Fueachairudo Kamera Endo Insutsurumento Corp

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