JPS55138256A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55138256A JPS55138256A JP4423479A JP4423479A JPS55138256A JP S55138256 A JPS55138256 A JP S55138256A JP 4423479 A JP4423479 A JP 4423479A JP 4423479 A JP4423479 A JP 4423479A JP S55138256 A JPS55138256 A JP S55138256A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- liquid
- tial3
- alloy
- minute
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the occurrence of hillock and to make wiring minute by a method wherein an Al layer on a semiconductor substrate is selectively covered with a Ti layer so as to form an Al-Ti alloy or TiAl3 with heat treatment and to etch the inactive portion. CONSTITUTION:An opening is made in an oxidized film 2 on an Si substrate 1, and Al wiring 2 is formed, then a Ti film 4 is laid on the wiring. The Ti is removed using a photoresist mask and a liquid of H2C2O4.2H2O, and Al is etched using a liquid of H3PO4-CH3COOH-HNO3-H2O series. Next a thin film of TiAl3 or Ti-Al alloy is made while heat treatment is added in a gas of H2+N2, and Ti4 which has not reacted yet is selectively etched with heated liquid of ethylene-diamine quadri-acetic acid-NH4OH-H2O2-H2O series. Then the Al hillock due to heat when covering with PSG6 does not occur and a crack is not produced. An opening 7 is made to form Al wiring, thus making it possible to for highly reliable and minute wiring.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4423479A JPS55138256A (en) | 1979-04-13 | 1979-04-13 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4423479A JPS55138256A (en) | 1979-04-13 | 1979-04-13 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55138256A true JPS55138256A (en) | 1980-10-28 |
Family
ID=12685835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4423479A Pending JPS55138256A (en) | 1979-04-13 | 1979-04-13 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138256A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995032521A1 (en) * | 1994-05-24 | 1995-11-30 | National Semiconductor Corporation | Method for forming solder bumps |
CN109087852A (en) * | 2018-08-10 | 2018-12-25 | 深圳市华星光电技术有限公司 | The production method of transistor metal electrode structure |
-
1979
- 1979-04-13 JP JP4423479A patent/JPS55138256A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995032521A1 (en) * | 1994-05-24 | 1995-11-30 | National Semiconductor Corporation | Method for forming solder bumps |
US5508229A (en) * | 1994-05-24 | 1996-04-16 | National Semiconductor Corporation | Method for forming solder bumps in semiconductor devices |
CN109087852A (en) * | 2018-08-10 | 2018-12-25 | 深圳市华星光电技术有限公司 | The production method of transistor metal electrode structure |
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