JPS55138256A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55138256A
JPS55138256A JP4423479A JP4423479A JPS55138256A JP S55138256 A JPS55138256 A JP S55138256A JP 4423479 A JP4423479 A JP 4423479A JP 4423479 A JP4423479 A JP 4423479A JP S55138256 A JPS55138256 A JP S55138256A
Authority
JP
Japan
Prior art keywords
wiring
liquid
tial3
alloy
minute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4423479A
Other languages
Japanese (ja)
Inventor
Nobuki Ibaraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4423479A priority Critical patent/JPS55138256A/en
Publication of JPS55138256A publication Critical patent/JPS55138256A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the occurrence of hillock and to make wiring minute by a method wherein an Al layer on a semiconductor substrate is selectively covered with a Ti layer so as to form an Al-Ti alloy or TiAl3 with heat treatment and to etch the inactive portion. CONSTITUTION:An opening is made in an oxidized film 2 on an Si substrate 1, and Al wiring 2 is formed, then a Ti film 4 is laid on the wiring. The Ti is removed using a photoresist mask and a liquid of H2C2O4.2H2O, and Al is etched using a liquid of H3PO4-CH3COOH-HNO3-H2O series. Next a thin film of TiAl3 or Ti-Al alloy is made while heat treatment is added in a gas of H2+N2, and Ti4 which has not reacted yet is selectively etched with heated liquid of ethylene-diamine quadri-acetic acid-NH4OH-H2O2-H2O series. Then the Al hillock due to heat when covering with PSG6 does not occur and a crack is not produced. An opening 7 is made to form Al wiring, thus making it possible to for highly reliable and minute wiring.
JP4423479A 1979-04-13 1979-04-13 Manufacture of semiconductor device Pending JPS55138256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4423479A JPS55138256A (en) 1979-04-13 1979-04-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4423479A JPS55138256A (en) 1979-04-13 1979-04-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55138256A true JPS55138256A (en) 1980-10-28

Family

ID=12685835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4423479A Pending JPS55138256A (en) 1979-04-13 1979-04-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55138256A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995032521A1 (en) * 1994-05-24 1995-11-30 National Semiconductor Corporation Method for forming solder bumps
CN109087852A (en) * 2018-08-10 2018-12-25 深圳市华星光电技术有限公司 The production method of transistor metal electrode structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995032521A1 (en) * 1994-05-24 1995-11-30 National Semiconductor Corporation Method for forming solder bumps
US5508229A (en) * 1994-05-24 1996-04-16 National Semiconductor Corporation Method for forming solder bumps in semiconductor devices
CN109087852A (en) * 2018-08-10 2018-12-25 深圳市华星光电技术有限公司 The production method of transistor metal electrode structure

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