JPS5649525A - Formation of thin film pattern - Google Patents

Formation of thin film pattern

Info

Publication number
JPS5649525A
JPS5649525A JP12503779A JP12503779A JPS5649525A JP S5649525 A JPS5649525 A JP S5649525A JP 12503779 A JP12503779 A JP 12503779A JP 12503779 A JP12503779 A JP 12503779A JP S5649525 A JPS5649525 A JP S5649525A
Authority
JP
Japan
Prior art keywords
layer
thin film
etching
film
patterning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12503779A
Other languages
Japanese (ja)
Other versions
JPS5753656B2 (en
Inventor
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12503779A priority Critical patent/JPS5649525A/en
Publication of JPS5649525A publication Critical patent/JPS5649525A/en
Publication of JPS5753656B2 publication Critical patent/JPS5753656B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers

Abstract

PURPOSE:To obtain an accurate pattern of microscopic size by a method wherein a polymer layer containing isocyanuric acid ester is placed between a photoresist layer and a thin film when patterning is performed by etching a thin film which is coated on a semiconductor substrate with an intermediate of an insulating layer. CONSTITUTION:An insulating layer 1 is coated on a semiconductor substrate S, a metal thin film 2 for which patterning such as Al, Al-Cu and the like are to be performed is provided and a photoresist layer 4 which will become a mask is formed on the above thin film 2. At this time, a layer 4 is not directly provided on the film 4, and a polymer layer 3 of triaryl socyanuric acid ester of about 1.5mum thick is placed between them. Then a window 5 is opened on the layer 4, the exposed part of a layer 3 is removed by performing a reactive sputter etching using CF4 gas, a window 6 is provided on the layer 3, the layer 4 is removed and the exposed section of the metal thin film 2 is removed by etching. Then the layer 3 and 4 are removed, and a desired patter 2 is obtained. By accomplishing the above processes, an unnecessary portion is not left on the film 2.
JP12503779A 1979-09-28 1979-09-28 Formation of thin film pattern Granted JPS5649525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12503779A JPS5649525A (en) 1979-09-28 1979-09-28 Formation of thin film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12503779A JPS5649525A (en) 1979-09-28 1979-09-28 Formation of thin film pattern

Publications (2)

Publication Number Publication Date
JPS5649525A true JPS5649525A (en) 1981-05-06
JPS5753656B2 JPS5753656B2 (en) 1982-11-13

Family

ID=14900273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12503779A Granted JPS5649525A (en) 1979-09-28 1979-09-28 Formation of thin film pattern

Country Status (1)

Country Link
JP (1) JPS5649525A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100428A (en) * 1981-12-10 1983-06-15 Matsushita Electronics Corp Formation of pattern
JPS63301732A (en) * 1987-05-31 1988-12-08 Toko Sangyo Kk Container for transportation of birds and basket thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100428A (en) * 1981-12-10 1983-06-15 Matsushita Electronics Corp Formation of pattern
JPS63301732A (en) * 1987-05-31 1988-12-08 Toko Sangyo Kk Container for transportation of birds and basket thereof
JPH0661194B2 (en) * 1987-05-31 1994-08-17 東興産業株式会社 Bird transportation container and its cage

Also Published As

Publication number Publication date
JPS5753656B2 (en) 1982-11-13

Similar Documents

Publication Publication Date Title
EP0020776A4 (en) Method of forming patterns.
JPS5620165A (en) Formation of pattern
JPS5669835A (en) Method for forming thin film pattern
JPS5656636A (en) Processing method of fine pattern
JPS5649525A (en) Formation of thin film pattern
GB2003660A (en) Deposition of material on a substrate
JPS5494881A (en) Exposure method
JPS5461478A (en) Chromium plate
JPS56105637A (en) Formation of pattern
JPS57130429A (en) Formation of electrode wiring
JPS56138941A (en) Forming method of wiring layer
JPS5687343A (en) Forming method of wiring
JPS5666038A (en) Formation of micro-pattern
JPS5635774A (en) Dry etching method
JPS5680130A (en) Manufacture of semiconductor device
JPS53113730A (en) Metallic pattern forming method
JPS5477068A (en) Pattern forming method
JPS5612733A (en) Ion etching method
JPS5489483A (en) Automatic alignment method
JPS5493970A (en) Patttern forming method of multi-layer metallic thin film
JPS5740934A (en) Manufacture of semiconductor element
JPS5471052A (en) Method of producing metal pattern
JPS55153329A (en) Manufacture of semiconductor device
JPS56115534A (en) Formation of pattern
JPS57177525A (en) Etching method for silicon oxide