JPS5649525A - Formation of thin film pattern - Google Patents
Formation of thin film patternInfo
- Publication number
- JPS5649525A JPS5649525A JP12503779A JP12503779A JPS5649525A JP S5649525 A JPS5649525 A JP S5649525A JP 12503779 A JP12503779 A JP 12503779A JP 12503779 A JP12503779 A JP 12503779A JP S5649525 A JPS5649525 A JP S5649525A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- etching
- film
- patterning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Abstract
PURPOSE:To obtain an accurate pattern of microscopic size by a method wherein a polymer layer containing isocyanuric acid ester is placed between a photoresist layer and a thin film when patterning is performed by etching a thin film which is coated on a semiconductor substrate with an intermediate of an insulating layer. CONSTITUTION:An insulating layer 1 is coated on a semiconductor substrate S, a metal thin film 2 for which patterning such as Al, Al-Cu and the like are to be performed is provided and a photoresist layer 4 which will become a mask is formed on the above thin film 2. At this time, a layer 4 is not directly provided on the film 4, and a polymer layer 3 of triaryl socyanuric acid ester of about 1.5mum thick is placed between them. Then a window 5 is opened on the layer 4, the exposed part of a layer 3 is removed by performing a reactive sputter etching using CF4 gas, a window 6 is provided on the layer 3, the layer 4 is removed and the exposed section of the metal thin film 2 is removed by etching. Then the layer 3 and 4 are removed, and a desired patter 2 is obtained. By accomplishing the above processes, an unnecessary portion is not left on the film 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12503779A JPS5649525A (en) | 1979-09-28 | 1979-09-28 | Formation of thin film pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12503779A JPS5649525A (en) | 1979-09-28 | 1979-09-28 | Formation of thin film pattern |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5649525A true JPS5649525A (en) | 1981-05-06 |
JPS5753656B2 JPS5753656B2 (en) | 1982-11-13 |
Family
ID=14900273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12503779A Granted JPS5649525A (en) | 1979-09-28 | 1979-09-28 | Formation of thin film pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5649525A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58100428A (en) * | 1981-12-10 | 1983-06-15 | Matsushita Electronics Corp | Formation of pattern |
JPS63301732A (en) * | 1987-05-31 | 1988-12-08 | Toko Sangyo Kk | Container for transportation of birds and basket thereof |
-
1979
- 1979-09-28 JP JP12503779A patent/JPS5649525A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58100428A (en) * | 1981-12-10 | 1983-06-15 | Matsushita Electronics Corp | Formation of pattern |
JPS63301732A (en) * | 1987-05-31 | 1988-12-08 | Toko Sangyo Kk | Container for transportation of birds and basket thereof |
JPH0661194B2 (en) * | 1987-05-31 | 1994-08-17 | 東興産業株式会社 | Bird transportation container and its cage |
Also Published As
Publication number | Publication date |
---|---|
JPS5753656B2 (en) | 1982-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0020776A4 (en) | Method of forming patterns. | |
JPS5620165A (en) | Formation of pattern | |
JPS5669835A (en) | Method for forming thin film pattern | |
JPS5656636A (en) | Processing method of fine pattern | |
JPS5649525A (en) | Formation of thin film pattern | |
GB2003660A (en) | Deposition of material on a substrate | |
JPS5494881A (en) | Exposure method | |
JPS5461478A (en) | Chromium plate | |
JPS56105637A (en) | Formation of pattern | |
JPS57130429A (en) | Formation of electrode wiring | |
JPS56138941A (en) | Forming method of wiring layer | |
JPS5687343A (en) | Forming method of wiring | |
JPS5666038A (en) | Formation of micro-pattern | |
JPS5635774A (en) | Dry etching method | |
JPS5680130A (en) | Manufacture of semiconductor device | |
JPS53113730A (en) | Metallic pattern forming method | |
JPS5477068A (en) | Pattern forming method | |
JPS5612733A (en) | Ion etching method | |
JPS5489483A (en) | Automatic alignment method | |
JPS5493970A (en) | Patttern forming method of multi-layer metallic thin film | |
JPS5740934A (en) | Manufacture of semiconductor element | |
JPS5471052A (en) | Method of producing metal pattern | |
JPS55153329A (en) | Manufacture of semiconductor device | |
JPS56115534A (en) | Formation of pattern | |
JPS57177525A (en) | Etching method for silicon oxide |