JPS5493970A - Patttern forming method of multi-layer metallic thin film - Google Patents

Patttern forming method of multi-layer metallic thin film

Info

Publication number
JPS5493970A
JPS5493970A JP38578A JP38578A JPS5493970A JP S5493970 A JPS5493970 A JP S5493970A JP 38578 A JP38578 A JP 38578A JP 38578 A JP38578 A JP 38578A JP S5493970 A JPS5493970 A JP S5493970A
Authority
JP
Japan
Prior art keywords
layer
thin film
metallic
metal
patttern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP38578A
Other languages
Japanese (ja)
Inventor
Yuji Oda
Takeshi Tsubata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP38578A priority Critical patent/JPS5493970A/en
Publication of JPS5493970A publication Critical patent/JPS5493970A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a small-sputter damage and small-dimension conversion error multi-layer metallic thin film by subjecting a metallic layer for a mask and the second layer to plasma etching simultaneously after etching the top layer physically.
CONSTITUTION: Top layer 4 consisting of metal which has a high physical etching speed, the second layer 3 consisting of one of Mo, W, Ta, V and Nb which has a physical etching speed lower than the metal of top layer 4, and metallic layer 5 consisting of one selected from the metal group of the second layer 3 are formed on semiconductor substrate 1 selectively. Next, metallic layer 5 is used as a mask to remove the metal of top layer 4 by physical etching. Next, metallic layer 5 and exposed second layer 3 are removed by plasma etching simultaneously. However, Ti layer 2 may be formed to give three-layer structure as required.
COPYRIGHT: (C)1979,JPO&Japio
JP38578A 1978-01-07 1978-01-07 Patttern forming method of multi-layer metallic thin film Pending JPS5493970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP38578A JPS5493970A (en) 1978-01-07 1978-01-07 Patttern forming method of multi-layer metallic thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP38578A JPS5493970A (en) 1978-01-07 1978-01-07 Patttern forming method of multi-layer metallic thin film

Publications (1)

Publication Number Publication Date
JPS5493970A true JPS5493970A (en) 1979-07-25

Family

ID=11472323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP38578A Pending JPS5493970A (en) 1978-01-07 1978-01-07 Patttern forming method of multi-layer metallic thin film

Country Status (1)

Country Link
JP (1) JPS5493970A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170922A (en) * 1987-01-09 1988-07-14 Sony Corp Wiring method
JPH0350828A (en) * 1989-07-19 1991-03-05 Nec Corp Method of forming gold wiring
JPH0354864A (en) * 1989-07-24 1991-03-08 Nec Corp Formation of schottky electrode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5018456A (en) * 1973-04-26 1975-02-26
JPS5279664A (en) * 1975-12-25 1977-07-04 Mitsubishi Electric Corp Forming method for electrodes of semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5018456A (en) * 1973-04-26 1975-02-26
JPS5279664A (en) * 1975-12-25 1977-07-04 Mitsubishi Electric Corp Forming method for electrodes of semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170922A (en) * 1987-01-09 1988-07-14 Sony Corp Wiring method
JPH0350828A (en) * 1989-07-19 1991-03-05 Nec Corp Method of forming gold wiring
JPH0354864A (en) * 1989-07-24 1991-03-08 Nec Corp Formation of schottky electrode

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