JPS5457982A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5457982A
JPS5457982A JP12547477A JP12547477A JPS5457982A JP S5457982 A JPS5457982 A JP S5457982A JP 12547477 A JP12547477 A JP 12547477A JP 12547477 A JP12547477 A JP 12547477A JP S5457982 A JPS5457982 A JP S5457982A
Authority
JP
Japan
Prior art keywords
film
wiring
ground
metal
anodic oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12547477A
Other languages
Japanese (ja)
Other versions
JPS5819135B2 (en
Inventor
Hidenobu Ishikura
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12547477A priority Critical patent/JPS5819135B2/en
Publication of JPS5457982A publication Critical patent/JPS5457982A/en
Publication of JPS5819135B2 publication Critical patent/JPS5819135B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To form multilayer winding in which the ground metal is not remained, by using the metallic film able to be etched through the hole for the ground of metal conversionable into insulation metallic oxide with the anodic oxidation such as Al.
CONSTITUTION: On the substrate 1 on which semiconductor elements are formed, the insulation film 2 having the opening 16 is placed and the Ti.W film 11 being ground metal and the upper wiring Al film 3 are coated with lamination. Next, the mask 4 is formed on the part remained as wiring, and the unnecessary film 3 other than the wiring 3 is converted into perforated Al2O3 film 5 with anodic oxidation of the film 3. After that, only the film 11 located under the film 5 only is removed by using CF4 gas and performing plasma etching through the holes of the film 5 and the hollow part 12 is caused between the films 5 and 2. Thus, around the wiring 3, the multilayer wiring construction not presenting the residual of Ti.W film 11 can be obtained
COPYRIGHT: (C)1979,JPO&Japio
JP12547477A 1977-10-18 1977-10-18 Manufacturing method of semiconductor device Expired JPS5819135B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12547477A JPS5819135B2 (en) 1977-10-18 1977-10-18 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12547477A JPS5819135B2 (en) 1977-10-18 1977-10-18 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5457982A true JPS5457982A (en) 1979-05-10
JPS5819135B2 JPS5819135B2 (en) 1983-04-16

Family

ID=14910974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12547477A Expired JPS5819135B2 (en) 1977-10-18 1977-10-18 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5819135B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5477590A (en) * 1977-12-02 1979-06-21 Mitsubishi Electric Corp Production of semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6071741U (en) * 1983-10-21 1985-05-21 住友電気工業株式会社 Disc brake with parking brake mechanism
JPS62158232U (en) * 1986-03-28 1987-10-07
JPH0628376U (en) * 1991-04-09 1994-04-15 日信工業株式会社 Air bleeding structure for vehicle disk brakes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5477590A (en) * 1977-12-02 1979-06-21 Mitsubishi Electric Corp Production of semiconductor device

Also Published As

Publication number Publication date
JPS5819135B2 (en) 1983-04-16

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