JPS5457982A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5457982A JPS5457982A JP12547477A JP12547477A JPS5457982A JP S5457982 A JPS5457982 A JP S5457982A JP 12547477 A JP12547477 A JP 12547477A JP 12547477 A JP12547477 A JP 12547477A JP S5457982 A JPS5457982 A JP S5457982A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- ground
- metal
- anodic oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE: To form multilayer winding in which the ground metal is not remained, by using the metallic film able to be etched through the hole for the ground of metal conversionable into insulation metallic oxide with the anodic oxidation such as Al.
CONSTITUTION: On the substrate 1 on which semiconductor elements are formed, the insulation film 2 having the opening 16 is placed and the Ti.W film 11 being ground metal and the upper wiring Al film 3 are coated with lamination. Next, the mask 4 is formed on the part remained as wiring, and the unnecessary film 3 other than the wiring 3 is converted into perforated Al2O3 film 5 with anodic oxidation of the film 3. After that, only the film 11 located under the film 5 only is removed by using CF4 gas and performing plasma etching through the holes of the film 5 and the hollow part 12 is caused between the films 5 and 2. Thus, around the wiring 3, the multilayer wiring construction not presenting the residual of Ti.W film 11 can be obtained
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12547477A JPS5819135B2 (en) | 1977-10-18 | 1977-10-18 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12547477A JPS5819135B2 (en) | 1977-10-18 | 1977-10-18 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5457982A true JPS5457982A (en) | 1979-05-10 |
JPS5819135B2 JPS5819135B2 (en) | 1983-04-16 |
Family
ID=14910974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12547477A Expired JPS5819135B2 (en) | 1977-10-18 | 1977-10-18 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5819135B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5477590A (en) * | 1977-12-02 | 1979-06-21 | Mitsubishi Electric Corp | Production of semiconductor device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6071741U (en) * | 1983-10-21 | 1985-05-21 | 住友電気工業株式会社 | Disc brake with parking brake mechanism |
JPS62158232U (en) * | 1986-03-28 | 1987-10-07 | ||
JPH0628376U (en) * | 1991-04-09 | 1994-04-15 | 日信工業株式会社 | Air bleeding structure for vehicle disk brakes |
-
1977
- 1977-10-18 JP JP12547477A patent/JPS5819135B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5477590A (en) * | 1977-12-02 | 1979-06-21 | Mitsubishi Electric Corp | Production of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5819135B2 (en) | 1983-04-16 |
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