JPS5477590A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5477590A
JPS5477590A JP14530477A JP14530477A JPS5477590A JP S5477590 A JPS5477590 A JP S5477590A JP 14530477 A JP14530477 A JP 14530477A JP 14530477 A JP14530477 A JP 14530477A JP S5477590 A JPS5477590 A JP S5477590A
Authority
JP
Japan
Prior art keywords
layer
porous alumina
wiring parts
wiring
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14530477A
Other languages
Japanese (ja)
Inventor
Tatsuya Enomoto
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14530477A priority Critical patent/JPS5477590A/en
Publication of JPS5477590A publication Critical patent/JPS5477590A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To prevent shortcirauiting of wirings by beforehand providing a conductor film on a semiconductor substate, superposing a wiring metal thereon then performing anodic oxidatin thence removing unnecessary conductor films.
CONSTITUTION: Conductive poly-Si 8 is laminated on an insulation film 2 having openings 9 and an Al layer 3 is made. Next, masks 4 are formed and the exposed part is converted to porous alumina 5 through anodic oxidation. At this time, formation current is supplied from the underlying layer 8 to the entire region of the Al layer 3 and the porous alumina is surely formed to the circumferences of wiring parts 3a thru c. when it reaches the layer 8, the formation stops. Next, only the layer 8 is completely etched away through the pores of the porous alumina 5 by a CF4 gas, whereby a hollow part 10 is formed. This construction prevents shortcircuiting between the wiring parts 3 with themselves.
COPYRIGHT: (C)1979,JPO&Japio
JP14530477A 1977-12-02 1977-12-02 Production of semiconductor device Pending JPS5477590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14530477A JPS5477590A (en) 1977-12-02 1977-12-02 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14530477A JPS5477590A (en) 1977-12-02 1977-12-02 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5477590A true JPS5477590A (en) 1979-06-21

Family

ID=15382045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14530477A Pending JPS5477590A (en) 1977-12-02 1977-12-02 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5477590A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521313B1 (en) * 2000-09-20 2003-02-18 Robert Bosch Gmbh Method for producing a diaphragm sensor unit and diaphragm sensor unit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5457982A (en) * 1977-10-18 1979-05-10 Mitsubishi Electric Corp Manufacture for semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5457982A (en) * 1977-10-18 1979-05-10 Mitsubishi Electric Corp Manufacture for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521313B1 (en) * 2000-09-20 2003-02-18 Robert Bosch Gmbh Method for producing a diaphragm sensor unit and diaphragm sensor unit

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