JPS5518056A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5518056A JPS5518056A JP9109078A JP9109078A JPS5518056A JP S5518056 A JPS5518056 A JP S5518056A JP 9109078 A JP9109078 A JP 9109078A JP 9109078 A JP9109078 A JP 9109078A JP S5518056 A JPS5518056 A JP S5518056A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode wirings
- film
- pair
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To eliminate the allowance for forming openings at both lower electrode wirings with a substrate in a semiconductor device by forming self-alignment holes insulated from a pair of electrode wirings of anodizable metals extending in parallel with each other.
CONSTITUTION: An insulating film 102 is formed on a semiconductor substrate 101, and diffusion masks 103, 104 are further formed thereon the thereby form impurity diffusion regions 105, 106 in the substrate 101. Then, the mask films 103, 104 are removed to thereby form anodizable metal such as aluminum electrodes 107, 108 and to then anodize the peripheral surface of the electrodes 107, 108, which are then coated with non-porous alumina layers 109, 110. Then, phosphorus glass layer 111 are formed further on the surface over the layers 109, 110, and a photoresist film 112 is formed on the surface of the layer 111. An opening parttern 113 is provided on the film 112 to thereby chemically selectively etch through the openibg. Thus, a self-alignment hole insulated from a pair of electrode wirings 107, 108 of aluminum is perforated through an insulating film 114 on the surface of the substrate 101 to thereby electrically connect the upper layer wiring 115 to the surface of the substrate 101.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9109078A JPS5518056A (en) | 1978-07-25 | 1978-07-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9109078A JPS5518056A (en) | 1978-07-25 | 1978-07-25 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5518056A true JPS5518056A (en) | 1980-02-07 |
JPS6148777B2 JPS6148777B2 (en) | 1986-10-25 |
Family
ID=14016815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9109078A Granted JPS5518056A (en) | 1978-07-25 | 1978-07-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5518056A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822261B2 (en) | 1991-03-06 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9735773B2 (en) | 2014-04-29 | 2017-08-15 | Allegro Microsystems, Llc | Systems and methods for sensing current through a low-side field effect transistor |
US9719806B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a ferromagnetic target object |
US9720054B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
US10823586B2 (en) | 2018-12-26 | 2020-11-03 | Allegro Microsystems, Llc | Magnetic field sensor having unequally spaced magnetic field sensing elements |
US11280637B2 (en) | 2019-11-14 | 2022-03-22 | Allegro Microsystems, Llc | High performance magnetic angle sensor |
US11237020B2 (en) | 2019-11-14 | 2022-02-01 | Allegro Microsystems, Llc | Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet |
US11578997B1 (en) | 2021-08-24 | 2023-02-14 | Allegro Microsystems, Llc | Angle sensor using eddy currents |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5011236A (en) * | 1973-05-30 | 1975-02-05 | ||
JPS5353254A (en) * | 1976-10-26 | 1978-05-15 | Toshiba Corp | Semiconductor device |
-
1978
- 1978-07-25 JP JP9109078A patent/JPS5518056A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5011236A (en) * | 1973-05-30 | 1975-02-05 | ||
JPS5353254A (en) * | 1976-10-26 | 1978-05-15 | Toshiba Corp | Semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822261B2 (en) | 1991-03-06 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6148777B2 (en) | 1986-10-25 |
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