JPS5649541A - Multilayer wiring structure for integrated circuit - Google Patents

Multilayer wiring structure for integrated circuit

Info

Publication number
JPS5649541A
JPS5649541A JP12609479A JP12609479A JPS5649541A JP S5649541 A JPS5649541 A JP S5649541A JP 12609479 A JP12609479 A JP 12609479A JP 12609479 A JP12609479 A JP 12609479A JP S5649541 A JPS5649541 A JP S5649541A
Authority
JP
Japan
Prior art keywords
layer
wiring
film
coated
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12609479A
Other languages
Japanese (ja)
Inventor
Hiroyuki Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12609479A priority Critical patent/JPS5649541A/en
Publication of JPS5649541A publication Critical patent/JPS5649541A/en
Pending legal-status Critical Current

Links

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain the wirings structure with high reliability by an arrangement wherein a metal with the high melting point of an Si compound of the metal is applied on the wiring metal in the multilayer wirings structure for IC having the wiring metal containing Al as a main ingredient and the insulative film coated thereon as a basic unit. CONSTITUTION:The first Al wiring layer 2 and a thin Mo layer 6 are coated on a substrate 1 the latter above the former and a photoregist film 7 with a predetermined pattern is formed thereon. Then, the exposed layer 6 and the wiring layer 2 are subsequently removed by etching with a mask of the photoregist film 7 to leave a thin film of the Mo layer 6 on the left wiring layer 2 being inclined. After removing the film 7, an insulative film 3 reaching to the substrate 1 is coated between the separated wiring layers 2 and then openings are bored at positions corresponding to areas forming contact holes 8 to expose the Mo layer 6. the second Al wiring layer 4 is coated all over that in contact with the exposed Mo layer 6. By so doing, the wiring layer 2 is made flat through the presence of the Mo layer 6 and not eroded by etching to form the holes 8.
JP12609479A 1979-09-28 1979-09-28 Multilayer wiring structure for integrated circuit Pending JPS5649541A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12609479A JPS5649541A (en) 1979-09-28 1979-09-28 Multilayer wiring structure for integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12609479A JPS5649541A (en) 1979-09-28 1979-09-28 Multilayer wiring structure for integrated circuit

Publications (1)

Publication Number Publication Date
JPS5649541A true JPS5649541A (en) 1981-05-06

Family

ID=14926449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12609479A Pending JPS5649541A (en) 1979-09-28 1979-09-28 Multilayer wiring structure for integrated circuit

Country Status (1)

Country Link
JP (1) JPS5649541A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208159A (en) * 1981-06-17 1982-12-21 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS5934647A (en) * 1982-08-20 1984-02-25 Matsushita Electronics Corp Manufacture of semiconductor device
JPS60137264A (en) * 1983-12-26 1985-07-20 Tadao Shiraishi Processing agent for cooking using enzyme

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50193A (en) * 1973-05-15 1975-01-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50193A (en) * 1973-05-15 1975-01-06

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208159A (en) * 1981-06-17 1982-12-21 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS5934647A (en) * 1982-08-20 1984-02-25 Matsushita Electronics Corp Manufacture of semiconductor device
JPS60137264A (en) * 1983-12-26 1985-07-20 Tadao Shiraishi Processing agent for cooking using enzyme

Similar Documents

Publication Publication Date Title
US4978423A (en) Selective solder formation on printed circuit boards
JPS5240969A (en) Process for production of semiconductor device
JPS5649541A (en) Multilayer wiring structure for integrated circuit
JPS5518056A (en) Semiconductor device
JPS56150845A (en) Structure of resistor for compound integrated circuit
JPS5693359A (en) Semiconductor integrated circuit and manufacture
JPS5732654A (en) Semiconductor integrated circuit device
JPS5680130A (en) Manufacture of semiconductor device
JPS5460557A (en) Solder electrode forming method
JPS5710249A (en) Manufacture of semiconductor device
JPS5546534A (en) Method of manufacturing semiconductor device
JPS56130951A (en) Manufacture of semiconductor device
JPS54132178A (en) Semiconductor device
JPS5474384A (en) Manufacture of semiconductor device
JPS5648151A (en) Wiring formation of semiconductor device
JPS5750459A (en) Manufacture of hybrid integrated circuit
JPS54162458A (en) Manufacture for semiconductor device
JPS5329088A (en) Production of semiconductor integrated circuit device
JPS54158183A (en) Manufacture of semiconductor device
JPS53110391A (en) Manufacture of multi-layer wiring for semiconductor device
JPS5636120A (en) Manufacture of magnetic bubble device
JPS57181143A (en) Manufacture of semiconductor device
JPS572545A (en) Manufacture of semiconductor device
JPS53114365A (en) Manufacture of semiconductor device
JPS57192048A (en) Manufacture of semiconductor device