JPS5693359A - Semiconductor integrated circuit and manufacture - Google Patents

Semiconductor integrated circuit and manufacture

Info

Publication number
JPS5693359A
JPS5693359A JP17369779A JP17369779A JPS5693359A JP S5693359 A JPS5693359 A JP S5693359A JP 17369779 A JP17369779 A JP 17369779A JP 17369779 A JP17369779 A JP 17369779A JP S5693359 A JPS5693359 A JP S5693359A
Authority
JP
Japan
Prior art keywords
layer
wiring metal
condenser
metal
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17369779A
Other languages
Japanese (ja)
Other versions
JPS5928056B2 (en
Inventor
Yukio Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17369779A priority Critical patent/JPS5928056B2/en
Publication of JPS5693359A publication Critical patent/JPS5693359A/en
Publication of JPS5928056B2 publication Critical patent/JPS5928056B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Abstract

PURPOSE:To obtain a condenser without limitation in an applied voltage by a method wherein semiconductor elements are formed on an Si substrate and connected with each other by a wiring metal on the first layer, and also part of them is used for a condenser wiring metal on the first layer, and the condenser wiring metal on the second layer is mounted on the first layer condenser wiring metal through a dielectric layer. CONSTITUTION:Prescribed semiconductor elements are formed in a P type Si substrate 1 and an N type layer 2 formed on the substrate 1, the whole surface is covered with an insulation layer 5, and the first layer condenser wiring metal 10 and the first layer wiring metal 11 for connecting the elements with each other are cover-attached on the insulation layer. Then, the first and second dielectric layers 8, 9 which dielectric constans are taken as epsilon1 and epsilon2 respectively with epsilon1>>epsilon2 for the dielectric constants, are lamination-formed on the whole surface including those metals 10 and 11, and the layer 9 is removed using a mask 12. After that, condenser wiring metal 13 on the second layer is cover-attached facing to the metal 10 on the layer 8 and a wiring metal 14 on the second layer is formed facing to the metal 11 on the layer 14 left behind.
JP17369779A 1979-12-26 1979-12-26 Manufacturing method of semiconductor integrated circuit Expired JPS5928056B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17369779A JPS5928056B2 (en) 1979-12-26 1979-12-26 Manufacturing method of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17369779A JPS5928056B2 (en) 1979-12-26 1979-12-26 Manufacturing method of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5693359A true JPS5693359A (en) 1981-07-28
JPS5928056B2 JPS5928056B2 (en) 1984-07-10

Family

ID=15965431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17369779A Expired JPS5928056B2 (en) 1979-12-26 1979-12-26 Manufacturing method of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5928056B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889854A (en) * 1981-11-24 1983-05-28 Seiko Epson Corp Semiconductor device
JPS60257554A (en) * 1984-06-04 1985-12-19 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS6115359A (en) * 1984-07-02 1986-01-23 Rohm Co Ltd Semiconductor device
US4646126A (en) * 1983-10-07 1987-02-24 Kabushiki Kaisha Toshiba Semiconductor device
JPS62114238A (en) * 1985-11-13 1987-05-26 Nec Corp Semiconductor integrated circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889854A (en) * 1981-11-24 1983-05-28 Seiko Epson Corp Semiconductor device
US4646126A (en) * 1983-10-07 1987-02-24 Kabushiki Kaisha Toshiba Semiconductor device
JPS60257554A (en) * 1984-06-04 1985-12-19 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS6115359A (en) * 1984-07-02 1986-01-23 Rohm Co Ltd Semiconductor device
JPS62114238A (en) * 1985-11-13 1987-05-26 Nec Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS5928056B2 (en) 1984-07-10

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