JPS5552252A - Semiconductor integrated circuit device and manufacturing of them - Google Patents
Semiconductor integrated circuit device and manufacturing of themInfo
- Publication number
- JPS5552252A JPS5552252A JP12557478A JP12557478A JPS5552252A JP S5552252 A JPS5552252 A JP S5552252A JP 12557478 A JP12557478 A JP 12557478A JP 12557478 A JP12557478 A JP 12557478A JP S5552252 A JPS5552252 A JP S5552252A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resistor
- resistors
- crystal silicon
- oxide films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000011065 in-situ storage Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To provide a semiconductor integrated circuit device in which each resistor is made to reduce its surface area and the degree of integration is advanced by forming two or more high resistors of multi-crystal silicon material having different resistance values on the semiconductor substrate. CONSTITUTION:A multi-crystal silicon film 3 is adhered to the surface of a silicon substrate 1 with an insulating film as the intermediate. The film 3 is doped with impurities in a density enough for producing resistance in situ as required to obtain a resistor having the maximum, necessary resistance. Then the same film 3 is subjected to patterning to form a wiring portion 4 and resistor portion 5. The resistors 5 are then treated by selective oxidation with heat to form oxide films 6, 12, 14 in their multi-crystalline surfaces in a manner such that those oxide films have different thicknesses from each other, making corresponding resistors 8, 9, 10 have different resistance values. The resistors 9, 10 in which the thicker films 12, 14 have been formed have lower resistance values than the resistor 8 in which the thinner film 6 has been formed since segration usually occurs to the impurities contained in the multi-crystal silicon film during the formation of the oxide films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12557478A JPS5552252A (en) | 1978-10-11 | 1978-10-11 | Semiconductor integrated circuit device and manufacturing of them |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12557478A JPS5552252A (en) | 1978-10-11 | 1978-10-11 | Semiconductor integrated circuit device and manufacturing of them |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5552252A true JPS5552252A (en) | 1980-04-16 |
| JPS6236396B2 JPS6236396B2 (en) | 1987-08-06 |
Family
ID=14913543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12557478A Granted JPS5552252A (en) | 1978-10-11 | 1978-10-11 | Semiconductor integrated circuit device and manufacturing of them |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5552252A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS629662A (en) * | 1985-07-06 | 1987-01-17 | Toshiba Corp | Semiconductor device and manufacture thereof |
| US6133094A (en) * | 1993-03-09 | 2000-10-17 | Hitachi Ltd | Semiconductor device and process of producing the same |
| EP2989661A4 (en) * | 2013-02-28 | 2017-02-15 | Texas Instruments Incorporated | Integrated circuit with same level different resistors |
-
1978
- 1978-10-11 JP JP12557478A patent/JPS5552252A/en active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS629662A (en) * | 1985-07-06 | 1987-01-17 | Toshiba Corp | Semiconductor device and manufacture thereof |
| US6133094A (en) * | 1993-03-09 | 2000-10-17 | Hitachi Ltd | Semiconductor device and process of producing the same |
| US6524924B1 (en) | 1993-03-09 | 2003-02-25 | Hitachi, Ltd. | Semiconductor device and process of producing the same |
| US6610569B1 (en) | 1993-03-09 | 2003-08-26 | Hitachi, Ltd. | Semiconductor device and process of producing the same |
| US6835632B2 (en) | 1993-03-09 | 2004-12-28 | Hitachi, Ltd. | Semiconductor device and process of producing the same |
| US7238582B2 (en) | 1993-03-09 | 2007-07-03 | Hitachi, Ltd. | Semiconductor device and process of producing the same |
| EP2989661A4 (en) * | 2013-02-28 | 2017-02-15 | Texas Instruments Incorporated | Integrated circuit with same level different resistors |
| US9704944B2 (en) | 2013-02-28 | 2017-07-11 | Texas Instruments Deutschland Gmbh | Three precision resistors of different sheet resistance at same level |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6236396B2 (en) | 1987-08-06 |
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