JPS56144530A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56144530A
JPS56144530A JP4734580A JP4734580A JPS56144530A JP S56144530 A JPS56144530 A JP S56144530A JP 4734580 A JP4734580 A JP 4734580A JP 4734580 A JP4734580 A JP 4734580A JP S56144530 A JPS56144530 A JP S56144530A
Authority
JP
Japan
Prior art keywords
layer
mask
monocrystal
poly
window section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4734580A
Other languages
Japanese (ja)
Other versions
JPS628007B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4734580A priority Critical patent/JPS56144530A/en
Publication of JPS56144530A publication Critical patent/JPS56144530A/en
Publication of JPS628007B2 publication Critical patent/JPS628007B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels

Abstract

PURPOSE:To three-dimensionally compose an element for high density by repeatedly executing a process forming a poly crystalline semiconductor layer through an insulating film having a contact window on a semiconductor substrate and a process monocrystalizing the regions except the window section. CONSTITUTION:An oxide film 2 providing a contact window section is formed on an Si monocrystal substrate 1 and an Al evaporating film mask 4 formed at the window section after accumulating a poly Si layer 3 on the surface of the film 2. Next, the poly Si region exposed by laser anneal is converted into a monocrystal layer 3', Then, the second layer insulating film (CVD oxide film) 5 is accumulated on the layer 3' after removing the mask 4 and such processes as opening of the window section, the formation of a poly Si layer 6, the formation of a mask 7, laser anneal are successively performed in the same way as for the first layer. Next, the substrate 1, monocrystal layers 3' and 6' are connected each other by removing the mask 7 and by diffusing impurities from the window. In this way, for example, the monocrystal layer 6' is provided with a MOSFET for a multilayer device and high density can be attained.
JP4734580A 1980-04-10 1980-04-10 Manufacture of semiconductor device Granted JPS56144530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4734580A JPS56144530A (en) 1980-04-10 1980-04-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4734580A JPS56144530A (en) 1980-04-10 1980-04-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56144530A true JPS56144530A (en) 1981-11-10
JPS628007B2 JPS628007B2 (en) 1987-02-20

Family

ID=12772564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4734580A Granted JPS56144530A (en) 1980-04-10 1980-04-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56144530A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890763A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Semiconductor device
JPS5892257A (en) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp Semiconductor device
JPS5893372A (en) * 1981-11-30 1983-06-03 Toshiba Corp Mos-type integrated circuit
EP1420437A1 (en) * 2001-07-25 2004-05-19 Seiko Epson Corporation METHOD OF PRODUCING SEMICONDUCTOR THIN FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, ELECTROOPTICAL DEVICE AND ELECTRONIC APPARATUS
JP2008141046A (en) * 2006-12-04 2008-06-19 Semiconductor Energy Lab Co Ltd Crystallization method of semiconductor film, fabrication method of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890763A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Semiconductor device
JPS5892257A (en) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp Semiconductor device
JPS5893372A (en) * 1981-11-30 1983-06-03 Toshiba Corp Mos-type integrated circuit
JPS6253951B2 (en) * 1981-11-30 1987-11-12 Tokyo Shibaura Electric Co
EP1420437A1 (en) * 2001-07-25 2004-05-19 Seiko Epson Corporation METHOD OF PRODUCING SEMICONDUCTOR THIN FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, ELECTROOPTICAL DEVICE AND ELECTRONIC APPARATUS
EP1420437A4 (en) * 2001-07-25 2006-02-08 Seiko Epson Corp Method of producing semiconductor thin film, method of producing semiconductor device, semiconductor device, integrated circuit, electrooptical device and electronic apparatus
JP2008141046A (en) * 2006-12-04 2008-06-19 Semiconductor Energy Lab Co Ltd Crystallization method of semiconductor film, fabrication method of semiconductor device

Also Published As

Publication number Publication date
JPS628007B2 (en) 1987-02-20

Similar Documents

Publication Publication Date Title
JPS56144530A (en) Manufacture of semiconductor device
JPS5516464A (en) Method of forming wafer for semiconductor device
JPS5444481A (en) Mos type semiconductor device and its manufacture
JPS5710926A (en) Manufacture of semiconductor device
JPS5748249A (en) Semiconductor device
JPS57145340A (en) Manufacture of semiconductor device
EP0236938A3 (en) Method for prevention of short circuiting whilst fabricating amorphous silicium thin-film solar cells
JPS52124860A (en) Electrode formation method for semiconductor devices
KR950024300A (en) Semiconductor device having trench type isolation structure and manufacturing method
JPS55102240A (en) Manufacture of semiconductor device
JPS56130948A (en) Semiconductor device
JPS5799736A (en) Fabrication of semiconductor substrate
JPS57167656A (en) Manufacture of semiconductor device
JPS57164560A (en) Manufacture of semiconductor integrated circuit device
JPS55105332A (en) Manufacture of semiconductor device
JPS5779641A (en) Manufacture of semiconductor device
JPS567482A (en) Manufacturing of semiconductor device
JPS5461490A (en) Multi-layer wiring forming method in semiconductor device
JPS577926A (en) Manufacture of semiconductor device
JPS5779643A (en) Semiconductor device
JPS54111782A (en) Manufacture for semiconductor device
JPS56160052A (en) Semiconductor device
JPS5649538A (en) Semiconductor device and method of manufacturing the same
JPS57206071A (en) Semiconductor device and manufacture thereof
JPS5656675A (en) Semiconductor device on insulated substrate