JPS5779643A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5779643A
JPS5779643A JP15614680A JP15614680A JPS5779643A JP S5779643 A JPS5779643 A JP S5779643A JP 15614680 A JP15614680 A JP 15614680A JP 15614680 A JP15614680 A JP 15614680A JP S5779643 A JPS5779643 A JP S5779643A
Authority
JP
Japan
Prior art keywords
film
element isolation
films
polycrystalline
protruded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15614680A
Other languages
Japanese (ja)
Inventor
Hisahiro Matsukawa
Hiroshi Nozawa
Junichi Matsunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15614680A priority Critical patent/JPS5779643A/en
Priority to DE8181305215T priority patent/DE3168688D1/en
Priority to EP81305215A priority patent/EP0051488B1/en
Priority to US06/317,616 priority patent/US4459325A/en
Publication of JPS5779643A publication Critical patent/JPS5779643A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To enable high integration of a semiconductor device by a method wherein element isolation films having bird beaks protruded in element regions length thereof being the half or less of the film thickness are provided on the surface of a semiconductor substrate. CONSTITUTION:A polycrystalline Si layer doped with phosphorus is provided on the P type Si substrate 1 interposing a thermal oxide film 2 between them, selective oxidation is performed to form thick oxide films 6 making a nitride film provided thereon as a mask, and after the nitride film is removed, the polycrystalline Si film being not oxidized is removed (3'' are remaining Si layers), and the remaining Si layers 3'' are oxidized again to form the element isolation oxide films having bird beaks protruded in the element regions length thereof being the half or less of the film thickness. Accordingly the minute element isolation films can be formed, and accordingly formation of element in minute type can be attained.
JP15614680A 1980-11-06 1980-11-06 Semiconductor device Pending JPS5779643A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15614680A JPS5779643A (en) 1980-11-06 1980-11-06 Semiconductor device
DE8181305215T DE3168688D1 (en) 1980-11-06 1981-11-02 Method for manufacturing a semiconductor device
EP81305215A EP0051488B1 (en) 1980-11-06 1981-11-02 Method for manufacturing a semiconductor device
US06/317,616 US4459325A (en) 1980-11-06 1981-11-03 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15614680A JPS5779643A (en) 1980-11-06 1980-11-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5779643A true JPS5779643A (en) 1982-05-18

Family

ID=15621328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15614680A Pending JPS5779643A (en) 1980-11-06 1980-11-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5779643A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263265A (en) * 1985-05-17 1986-11-21 Matsushita Electronics Corp Manufacture of semiconductor device
US4818235A (en) * 1987-02-10 1989-04-04 Industry Technology Research Institute Isolation structures for integrated circuits

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169372A (en) * 1974-11-06 1976-06-15 Ibm

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169372A (en) * 1974-11-06 1976-06-15 Ibm

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263265A (en) * 1985-05-17 1986-11-21 Matsushita Electronics Corp Manufacture of semiconductor device
US4818235A (en) * 1987-02-10 1989-04-04 Industry Technology Research Institute Isolation structures for integrated circuits

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