JPS5779643A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5779643A JPS5779643A JP15614680A JP15614680A JPS5779643A JP S5779643 A JPS5779643 A JP S5779643A JP 15614680 A JP15614680 A JP 15614680A JP 15614680 A JP15614680 A JP 15614680A JP S5779643 A JPS5779643 A JP S5779643A
- Authority
- JP
- Japan
- Prior art keywords
- film
- element isolation
- films
- polycrystalline
- protruded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To enable high integration of a semiconductor device by a method wherein element isolation films having bird beaks protruded in element regions length thereof being the half or less of the film thickness are provided on the surface of a semiconductor substrate. CONSTITUTION:A polycrystalline Si layer doped with phosphorus is provided on the P type Si substrate 1 interposing a thermal oxide film 2 between them, selective oxidation is performed to form thick oxide films 6 making a nitride film provided thereon as a mask, and after the nitride film is removed, the polycrystalline Si film being not oxidized is removed (3'' are remaining Si layers), and the remaining Si layers 3'' are oxidized again to form the element isolation oxide films having bird beaks protruded in the element regions length thereof being the half or less of the film thickness. Accordingly the minute element isolation films can be formed, and accordingly formation of element in minute type can be attained.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15614680A JPS5779643A (en) | 1980-11-06 | 1980-11-06 | Semiconductor device |
EP81305215A EP0051488B1 (en) | 1980-11-06 | 1981-11-02 | Method for manufacturing a semiconductor device |
DE8181305215T DE3168688D1 (en) | 1980-11-06 | 1981-11-02 | Method for manufacturing a semiconductor device |
US06/317,616 US4459325A (en) | 1980-11-06 | 1981-11-03 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15614680A JPS5779643A (en) | 1980-11-06 | 1980-11-06 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5779643A true JPS5779643A (en) | 1982-05-18 |
Family
ID=15621328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15614680A Pending JPS5779643A (en) | 1980-11-06 | 1980-11-06 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5779643A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61263265A (en) * | 1985-05-17 | 1986-11-21 | Matsushita Electronics Corp | Manufacture of semiconductor device |
US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5169372A (en) * | 1974-11-06 | 1976-06-15 | Ibm |
-
1980
- 1980-11-06 JP JP15614680A patent/JPS5779643A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5169372A (en) * | 1974-11-06 | 1976-06-15 | Ibm |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61263265A (en) * | 1985-05-17 | 1986-11-21 | Matsushita Electronics Corp | Manufacture of semiconductor device |
US4818235A (en) * | 1987-02-10 | 1989-04-04 | Industry Technology Research Institute | Isolation structures for integrated circuits |
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