JPS57196544A - Manufacture of integrated circuit isolated by oxide film - Google Patents

Manufacture of integrated circuit isolated by oxide film

Info

Publication number
JPS57196544A
JPS57196544A JP8056281A JP8056281A JPS57196544A JP S57196544 A JPS57196544 A JP S57196544A JP 8056281 A JP8056281 A JP 8056281A JP 8056281 A JP8056281 A JP 8056281A JP S57196544 A JPS57196544 A JP S57196544A
Authority
JP
Japan
Prior art keywords
layer
oxide film
polycrystalline
amorphous
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8056281A
Other languages
Japanese (ja)
Inventor
Tetsuo Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8056281A priority Critical patent/JPS57196544A/en
Publication of JPS57196544A publication Critical patent/JPS57196544A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To make an integrated circuit having oxide film isolation structure to thick, and to enable to make the circuit to have high withstand voltage by a method wherein a part of an Si layer at the isolation region is made to have polycrystalline or amorphous structure having high oxidation speed. CONSTITUTION:After floating collectors 2 are formed by diffusion in a p type Si substrate 1, a layer 8 of SiO2, etc., is formed, and when epitaxial growth is made to be generated, single crystal Si layers 3 and the polycrystalline or amorphous Si layer 9 are formed. Underlay oxide films 4 and Si3N4 films 5 for masking are formed, and after the oxide film isolation region is etched by quantity corresponding to expansion to be generated by oxidation, when oxidation is performed, because the polycrystalline or amorphous Si layer has high oxidation speed, the layer thereof is oxidized completely up to the substrate face through the thick epitaxial layer, and complete insulating isolation of the single crystal layer regions can be attained.
JP8056281A 1981-05-27 1981-05-27 Manufacture of integrated circuit isolated by oxide film Pending JPS57196544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8056281A JPS57196544A (en) 1981-05-27 1981-05-27 Manufacture of integrated circuit isolated by oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8056281A JPS57196544A (en) 1981-05-27 1981-05-27 Manufacture of integrated circuit isolated by oxide film

Publications (1)

Publication Number Publication Date
JPS57196544A true JPS57196544A (en) 1982-12-02

Family

ID=13721773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8056281A Pending JPS57196544A (en) 1981-05-27 1981-05-27 Manufacture of integrated circuit isolated by oxide film

Country Status (1)

Country Link
JP (1) JPS57196544A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4853344A (en) * 1988-08-12 1989-08-01 Advanced Micro Devices, Inc. Method of integrated circuit isolation oxidizing walls of isolation slot, growing expitaxial layer over isolation slot, and oxidizing epitaxial layer over isolation slot
US4876214A (en) * 1988-06-02 1989-10-24 Tektronix, Inc. Method for fabricating an isolation region in a semiconductor substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS518880A (en) * 1974-07-10 1976-01-24 Hitachi Ltd Handotaisochi oyobi sonoseizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS518880A (en) * 1974-07-10 1976-01-24 Hitachi Ltd Handotaisochi oyobi sonoseizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4876214A (en) * 1988-06-02 1989-10-24 Tektronix, Inc. Method for fabricating an isolation region in a semiconductor substrate
US4853344A (en) * 1988-08-12 1989-08-01 Advanced Micro Devices, Inc. Method of integrated circuit isolation oxidizing walls of isolation slot, growing expitaxial layer over isolation slot, and oxidizing epitaxial layer over isolation slot

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