JPS57199234A - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPS57199234A
JPS57199234A JP8522781A JP8522781A JPS57199234A JP S57199234 A JPS57199234 A JP S57199234A JP 8522781 A JP8522781 A JP 8522781A JP 8522781 A JP8522781 A JP 8522781A JP S57199234 A JPS57199234 A JP S57199234A
Authority
JP
Japan
Prior art keywords
layer
oxide film
stage
mask
collector buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8522781A
Other languages
Japanese (ja)
Other versions
JPS6217868B2 (en
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8522781A priority Critical patent/JPS57199234A/en
Publication of JPS57199234A publication Critical patent/JPS57199234A/en
Publication of JPS6217868B2 publication Critical patent/JPS6217868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To improve high voltage resisting of element, by a method wherein first stage in an oxide film to isolate between elements is formed to attain collector buried layer and second stage thereof is formed in epitaxial layer. CONSTITUTION:Collector buried layer 2 is formed on P type Si substrate 1, and then N type epitaxial layer 3 is grown. The layer 3 is etched using a photo resist film 6 as a mask and a resist film 19 is formed. The layer 3 is etched using the resist film as a mask and boron ion is implanted thereby a channel preventing layer 7 is formed. After removing the resist films 6, 19, selective oxidation is performed using an oxide film 4 as a mask thereby an isolation oxide film 8 is formed. The isolation oxide film 8 is formed in two-stage structure contacting with collector buried layers 9a, 9b, thereby surface stage difference can be reduced and high voltage resisting is improved by making the epitaxial layer thick.
JP8522781A 1981-06-01 1981-06-01 Semiconductor integrated circuit device and manufacture thereof Granted JPS57199234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8522781A JPS57199234A (en) 1981-06-01 1981-06-01 Semiconductor integrated circuit device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8522781A JPS57199234A (en) 1981-06-01 1981-06-01 Semiconductor integrated circuit device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57199234A true JPS57199234A (en) 1982-12-07
JPS6217868B2 JPS6217868B2 (en) 1987-04-20

Family

ID=13852674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8522781A Granted JPS57199234A (en) 1981-06-01 1981-06-01 Semiconductor integrated circuit device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57199234A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888301A (en) * 1987-09-30 1989-12-19 Siemens Aktiengesellschaft Method for generating a sunken oxide

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661140A (en) * 1979-10-25 1981-05-26 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661140A (en) * 1979-10-25 1981-05-26 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888301A (en) * 1987-09-30 1989-12-19 Siemens Aktiengesellschaft Method for generating a sunken oxide

Also Published As

Publication number Publication date
JPS6217868B2 (en) 1987-04-20

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