JPS56152262A - Manufacture of semiconductor integrated circuit device - Google Patents
Manufacture of semiconductor integrated circuit deviceInfo
- Publication number
- JPS56152262A JPS56152262A JP5665080A JP5665080A JPS56152262A JP S56152262 A JPS56152262 A JP S56152262A JP 5665080 A JP5665080 A JP 5665080A JP 5665080 A JP5665080 A JP 5665080A JP S56152262 A JPS56152262 A JP S56152262A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- type
- layer
- low
- oxidizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To form I<2>L improved integration by oxidizing the surfaces of polycrystaline silicon electrodes wherein reverse transistors having the same current amplification factor are obtained stacking a low-resistance base region and a metallic contact layer by self alignment for formation. CONSTITUTION:An N<+> type buried layer 2, an N type epitaxial layer 3, oxide films 103, channel cuts 5, and a P type low density layer 6 are formed on P type silicon 1. Next, nitride films 202, oxide films, and polycrystalline silicon layers are formed on a thin oxide film and polycrystalline electrodes 302-306 are formed by oxidizing the surface after patterning. Next, the surface of a semiconductor is exposed by etching the exposed parts of the nitride films 202 to diffuse P type high-density layers 7, 8 and then Al electrodes 401, 403 are formed. No difference in the performance for each collector exists as low-resistance electrodes by metal are provided and high current amplification factor can be obtained even for small collector area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5665080A JPS56152262A (en) | 1980-04-25 | 1980-04-25 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5665080A JPS56152262A (en) | 1980-04-25 | 1980-04-25 | Manufacture of semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56152262A true JPS56152262A (en) | 1981-11-25 |
| JPS6155782B2 JPS6155782B2 (en) | 1986-11-29 |
Family
ID=13033229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5665080A Granted JPS56152262A (en) | 1980-04-25 | 1980-04-25 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56152262A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01128896U (en) * | 1988-02-26 | 1989-09-01 | ||
| JPH0331990A (en) * | 1989-06-28 | 1991-02-12 | Matsushita Refrig Co Ltd | Cartridge tank system feed water device for cup automatic vending machine |
-
1980
- 1980-04-25 JP JP5665080A patent/JPS56152262A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6155782B2 (en) | 1986-11-29 |
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