JPS6468949A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6468949A
JPS6468949A JP22618987A JP22618987A JPS6468949A JP S6468949 A JPS6468949 A JP S6468949A JP 22618987 A JP22618987 A JP 22618987A JP 22618987 A JP22618987 A JP 22618987A JP S6468949 A JPS6468949 A JP S6468949A
Authority
JP
Japan
Prior art keywords
film
layer
insulating film
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22618987A
Other languages
Japanese (ja)
Inventor
Junichi Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP22618987A priority Critical patent/JPS6468949A/en
Publication of JPS6468949A publication Critical patent/JPS6468949A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To the manufacturing process of a semiconductor device easy, by commonly using a semiconductor layer and an insulating film for different functions. CONSTITUTION:A polycrystalline Si layer 13a and an Si3N4 film 14 are formed on an SiO2 film 12 on a P-type Si substrate 11. The specified thicknesses of the film 14 and the layer 13a in an element isolating region are removed. With the film 14 as a mask, an SiO2 film 15 is formed by thermal oxidation. A hole 16 penetrating the layer 13a and the film 12 is formed. An exposed part 17 is formed on the surface of the substrate 11. A polycrystalline Si layer 13b is formed. P is diffused into the Si layers 13b and 13a. A silicide layer 22 is formed, and wiring layers 23 are formed together with the Si layer 13b. The bird's beak of the insulating film 15 is made small with the semiconductor layer 13a. The layer 13a prevents the etching of the insulating film 12 when the exposed part 17 is provided. The insulating film 12 alleviates stress between the substrate 11 and the oxidation resisting film 14 when the insulating film 15 is formed. The film 12 insulates the substrate 11 and the wiring layers 23. Therefore, the manufacturing process of the semiconductor device is made easy.
JP22618987A 1987-09-09 1987-09-09 Manufacture of semiconductor device Pending JPS6468949A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22618987A JPS6468949A (en) 1987-09-09 1987-09-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22618987A JPS6468949A (en) 1987-09-09 1987-09-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6468949A true JPS6468949A (en) 1989-03-15

Family

ID=16841279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22618987A Pending JPS6468949A (en) 1987-09-09 1987-09-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6468949A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03187224A (en) * 1989-12-15 1991-08-15 Mitsubishi Electric Corp Semiconductor device
KR100367497B1 (en) * 1995-12-29 2003-03-03 주식회사 하이닉스반도체 Method for manufacturing contact hole in semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03187224A (en) * 1989-12-15 1991-08-15 Mitsubishi Electric Corp Semiconductor device
KR100367497B1 (en) * 1995-12-29 2003-03-03 주식회사 하이닉스반도체 Method for manufacturing contact hole in semiconductor device

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