JPS6468949A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6468949A JPS6468949A JP22618987A JP22618987A JPS6468949A JP S6468949 A JPS6468949 A JP S6468949A JP 22618987 A JP22618987 A JP 22618987A JP 22618987 A JP22618987 A JP 22618987A JP S6468949 A JPS6468949 A JP S6468949A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- insulating film
- substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To the manufacturing process of a semiconductor device easy, by commonly using a semiconductor layer and an insulating film for different functions. CONSTITUTION:A polycrystalline Si layer 13a and an Si3N4 film 14 are formed on an SiO2 film 12 on a P-type Si substrate 11. The specified thicknesses of the film 14 and the layer 13a in an element isolating region are removed. With the film 14 as a mask, an SiO2 film 15 is formed by thermal oxidation. A hole 16 penetrating the layer 13a and the film 12 is formed. An exposed part 17 is formed on the surface of the substrate 11. A polycrystalline Si layer 13b is formed. P is diffused into the Si layers 13b and 13a. A silicide layer 22 is formed, and wiring layers 23 are formed together with the Si layer 13b. The bird's beak of the insulating film 15 is made small with the semiconductor layer 13a. The layer 13a prevents the etching of the insulating film 12 when the exposed part 17 is provided. The insulating film 12 alleviates stress between the substrate 11 and the oxidation resisting film 14 when the insulating film 15 is formed. The film 12 insulates the substrate 11 and the wiring layers 23. Therefore, the manufacturing process of the semiconductor device is made easy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22618987A JPS6468949A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22618987A JPS6468949A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6468949A true JPS6468949A (en) | 1989-03-15 |
Family
ID=16841279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22618987A Pending JPS6468949A (en) | 1987-09-09 | 1987-09-09 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6468949A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03187224A (en) * | 1989-12-15 | 1991-08-15 | Mitsubishi Electric Corp | Semiconductor device |
KR100367497B1 (en) * | 1995-12-29 | 2003-03-03 | 주식회사 하이닉스반도체 | Method for manufacturing contact hole in semiconductor device |
-
1987
- 1987-09-09 JP JP22618987A patent/JPS6468949A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03187224A (en) * | 1989-12-15 | 1991-08-15 | Mitsubishi Electric Corp | Semiconductor device |
KR100367497B1 (en) * | 1995-12-29 | 2003-03-03 | 주식회사 하이닉스반도체 | Method for manufacturing contact hole in semiconductor device |
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