JPS6480024A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6480024A JPS6480024A JP23612387A JP23612387A JPS6480024A JP S6480024 A JPS6480024 A JP S6480024A JP 23612387 A JP23612387 A JP 23612387A JP 23612387 A JP23612387 A JP 23612387A JP S6480024 A JPS6480024 A JP S6480024A
- Authority
- JP
- Japan
- Prior art keywords
- lamination
- contact hole
- source
- oxide film
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To perform the metal lamination of the source/drain by largely opening only the part of the lower part of a contact hole when opening the contact hole, and burying a metal into it by means of CVD. CONSTITUTION:An oxide film 19 for high-temperature melt is deposited on the whole surface and thereafter annealed, thereby forming a high-concentration diffusion layer 110 of phosphorus on the rear. A silicon nitride film 18 is laterally etched from the end of an oxide film 15 for the gate sidewall to the end of an element isolation oxide film 12. A silicon nitride film 16 formed on a source/drain diffusion layer 17 is removed by a dilute hydrofluoric acid process, exposing the Si surface for the W lamination. By burying W111 in the contact hole by the use of a selective CVD method, the W lamination is completed. With this, the metal lamination of the source/drain is performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23612387A JPS6480024A (en) | 1987-09-22 | 1987-09-22 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23612387A JPS6480024A (en) | 1987-09-22 | 1987-09-22 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6480024A true JPS6480024A (en) | 1989-03-24 |
Family
ID=16996092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23612387A Pending JPS6480024A (en) | 1987-09-22 | 1987-09-22 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6480024A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226020A (en) * | 1988-07-15 | 1990-01-29 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPH02308552A (en) * | 1989-05-09 | 1990-12-21 | Motorola Inc | Contact structuke for semiconduct or integrated circuit and its for mation method |
| JP2001127151A (en) * | 1999-10-26 | 2001-05-11 | Fujitsu Ltd | Semiconductor device and its manufacture method |
| US6383857B2 (en) | 1998-07-07 | 2002-05-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
| JP2005197654A (en) * | 2003-12-30 | 2005-07-21 | Hynix Semiconductor Inc | Contact plug of semiconductor device and method of forming same |
| EP1946366A1 (en) * | 2005-10-21 | 2008-07-23 | International Business Machines Corporation | Field effect transistors (fets) with inverted source/drain metallic contacts, and method of fabricating same |
| JP2012175109A (en) * | 2011-02-17 | 2012-09-10 | Freescale Semiconductor Inc | Anchored conductive via and method for forming the same |
-
1987
- 1987-09-22 JP JP23612387A patent/JPS6480024A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226020A (en) * | 1988-07-15 | 1990-01-29 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPH02308552A (en) * | 1989-05-09 | 1990-12-21 | Motorola Inc | Contact structuke for semiconduct or integrated circuit and its for mation method |
| US6383857B2 (en) | 1998-07-07 | 2002-05-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
| JP2001127151A (en) * | 1999-10-26 | 2001-05-11 | Fujitsu Ltd | Semiconductor device and its manufacture method |
| JP2005197654A (en) * | 2003-12-30 | 2005-07-21 | Hynix Semiconductor Inc | Contact plug of semiconductor device and method of forming same |
| EP1946366A1 (en) * | 2005-10-21 | 2008-07-23 | International Business Machines Corporation | Field effect transistors (fets) with inverted source/drain metallic contacts, and method of fabricating same |
| JP2009513007A (en) * | 2005-10-21 | 2009-03-26 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Field effect transistor (FET) having reverse source / drain metal contact and method of manufacturing the same |
| JP2012175109A (en) * | 2011-02-17 | 2012-09-10 | Freescale Semiconductor Inc | Anchored conductive via and method for forming the same |
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