JPS6447045A - Formation of element-isolating region - Google Patents
Formation of element-isolating regionInfo
- Publication number
- JPS6447045A JPS6447045A JP20478087A JP20478087A JPS6447045A JP S6447045 A JPS6447045 A JP S6447045A JP 20478087 A JP20478087 A JP 20478087A JP 20478087 A JP20478087 A JP 20478087A JP S6447045 A JPS6447045 A JP S6447045A
- Authority
- JP
- Japan
- Prior art keywords
- film
- nitride film
- insulating film
- oxide film
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To reduce a bird's beak in length by a method wherein a lower oxide film, a first nitride film, and an insulating film are formed in that order on an element region in a silicon substrate, anisotropic ion etching is accomplished in a vertical direction, a sidewall nitride film is formed, selective oxidation is accomplished, and then an element-isolating insulating film is formed. CONSTITUTION:A silicon substrate 10 is subjected to oxidation for the formation of a lower oxide film 12 that is a silicon oxide film, a first nitride film 14 and an silicon oxide insulating film 16 are formed in that order in a CVD process, and then the silicon substrate 10 is caused to be exposed in an element isolating region 22. A second nitride film 18 is deposited on the entire surface by CVD. Anisotropic ion etching is accomplished wherein the second nitride film 18 is affected, which results in a sidewall nitride film 20 on the side walls of the lower oxide film 12, the first nitride film 14, and the insulating film 16. The insulating film 16 is removed, which is followed by a selective oxidation process for the formation of an elementisolating insulating film 24 in the elementisolating region 22. After this, the side-wall oxide film 20 and the lower oxide film 12 are removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20478087A JPS6447045A (en) | 1987-08-18 | 1987-08-18 | Formation of element-isolating region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20478087A JPS6447045A (en) | 1987-08-18 | 1987-08-18 | Formation of element-isolating region |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6447045A true JPS6447045A (en) | 1989-02-21 |
Family
ID=16496223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20478087A Pending JPS6447045A (en) | 1987-08-18 | 1987-08-18 | Formation of element-isolating region |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6447045A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4336869A1 (en) * | 1993-10-28 | 1995-05-04 | Gold Star Electronics | Method for producing an MOS transistor |
-
1987
- 1987-08-18 JP JP20478087A patent/JPS6447045A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4336869A1 (en) * | 1993-10-28 | 1995-05-04 | Gold Star Electronics | Method for producing an MOS transistor |
| DE4336869C2 (en) * | 1993-10-28 | 2003-05-28 | Gold Star Electronics | Method of manufacturing a MOS transistor |
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