KR100192540B1 - Method for forming an element isolation region in a semiconductor device - Google Patents

Method for forming an element isolation region in a semiconductor device Download PDF

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KR100192540B1
KR100192540B1 KR1019910011721A KR910011721A KR100192540B1 KR 100192540 B1 KR100192540 B1 KR 100192540B1 KR 1019910011721 A KR1019910011721 A KR 1019910011721A KR 910011721 A KR910011721 A KR 910011721A KR 100192540 B1 KR100192540 B1 KR 100192540B1
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South Korea
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oxide film
nitride film
field oxide
film
forming
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KR1019910011721A
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Korean (ko)
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KR930003320A (en
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김홍선
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구본준
엘지반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

본 발명은 필드산화를 두번 실시하여 버즈비크에 의한 액티브 영역의 감소를 최소화시키고 필드산화막을 깊게 형성시킬 수 있도록한 반도체 소자의 격리영역 형성방법에 관한것으로, 기판(1)위체 베이스산화막(2)을 성장시키고 제1질화막(3), HTO(4)를 차례로 중착하는 공정과, 전표면에 제2질화막(5)을 증착하고 식각하여 측벽을 형성하는 공정과, HTO(4)를 제거하고 제1필드산화막(6) 성장후 제1필드산화막(6)을 제거하는 공정과, 패드산화막(7)과 제3질화막(7)을 증착하고 제3질화막을 수직식각한 후 채널스톱이온을 주입하는 공정과, 제2필드산화막(9)을 성장시키는 공정을 차례로 실시하여서 이루어진다.The present invention relates to a method of forming an isolation region of a semiconductor device in which field oxidation is performed twice to minimize the reduction of the active region caused by Buzzbee and to form a deep field oxide film. And depositing the first nitride film 3 and HTO 4 in turn, depositing and etching the second nitride film 5 on the entire surface to form sidewalls, and removing the HTO 4. After the first field oxide film 6 is grown, the first field oxide film 6 is removed, the pad oxide film 7 and the third nitride film 7 are deposited, the third nitride film is vertically etched, and channel stop ions are injected. And the step of growing the second field oxide film 9 in this order.

Description

반도체 소자의 격리영역 형성방법Method of forming an isolation region of a semiconductor device

제1도는 종래의 격리영역 형성을 위한 공정 단면도.1 is a cross-sectional view of a process for forming a conventional isolation region.

제2도는 본 발명의 격리영역 형성을 위한 공정 단면도.2 is a cross-sectional view of a process for forming an isolation region of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 기판 2 : 베이스 산화막1 substrate 2 base oxide film

3 : 제1질화막 4 : HTO3: first nitride film 4: HTO

5 : 제2질화막 6 : 제1필드산화막5: second nitride film 6: first field oxide film

7 : 패드산화막 8 : 제3질화막7: pad oxide film 8: third nitride film

9 : 제2필드산화막9: second field oxide film

본 발명은 필드산화를 두번 실시하여 버즈 비크(Bird's beak)에 의한 액티브 영역의 감소를 최소화시키고 필드산화막을 깊게 형성시킬 수 있도록 한 반도체 소자의 격리영역 형성방법에 관한 것이다. 종래의 격리영역 형성공정은 제1도 (A)에 도시된 바와같이 기판(1)에 베이스 산화막을 성장시키고 그위에 제1질화막(3)을 증착한 후 제1필드산화막(6)을 성장시킨다.The present invention relates to a method for forming an isolation region of a semiconductor device in which field oxidation is performed twice to minimize the reduction of the active region caused by Bird's beak and to deeply form the field oxide layer. In the conventional isolation region forming process, as shown in FIG. 1A, a base oxide film is grown on a substrate 1, a first nitride film 3 is deposited thereon, and then a first field oxide film 6 is grown. .

그리고 (B)와 같이 상기 필드산화막(6)을 제거하고 (C)와같이 다시 베이스 산화막(2)을 성장시킨후 제2질화막(5)을 증착하며 (D)와같이 필드영역의 제2질화막(5)과 베이스 산화막(2)을 제거한 후 (E)와 같이 제2필드산화막(9)을 성장시킨다.The field oxide film 6 is removed as shown in (B), the base oxide film 2 is grown again as shown in (C), and the second nitride film 5 is deposited. As shown in (D), the second nitride film in the field region is deposited. After the removal of (5) and the base oxide film 2, the second field oxide film 9 is grown as shown in (E).

그러나, 상기와 같은 종래의 기술에 있어서는 액티브 영역이 좁아지면 제1필드산화막(6)을 제거할경우 제1질화막(3)이 떨어져 나가기 쉬운 결점이 있다.However, in the conventional technique as described above, when the active region is narrowed, the first nitride film 3 is likely to fall off when the first field oxide film 6 is removed.

본 발명은 상기와 같은 종래의 결점을 해결하기 위한것으로 필드산화를 두번 실시하여 액티브 영역의 감소를 방지함과 아울러 완벽한 격리영역을 형성할 수 있는 반도체 소자의 격리영역 형성방법을 제공하는데 그 목적이 있다.Disclosure of Invention The present invention has been made to solve the above-mentioned drawbacks and provides a method of forming an isolation region of a semiconductor device capable of forming a perfect isolation region while preventing field reduction by performing twice the field oxidation. have.

이하에서 이와같은 목적을 달성하기 위한 본 발명의 실시예를 첨부된도면 제2도에 의하여 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention for achieving such an object will be described in detail with reference to the accompanying drawings.

먼저 (A)와 같이 기판(1)위에 베이스 산화막(2)을 성장시키고 그위에 제1질화막(3)과 HTO(4)를 차례로 증착한다. 그리고 (B)와같이 전표면에 제2질화막(5)을 증착하여 수직식각으로 제2질화막(5)을 제거하므로 (C)와같이 측벽을 형성한다.First, as shown in (A), the base oxide film 2 is grown on the substrate 1, and the first nitride film 3 and the HTO 4 are sequentially deposited thereon. As the second nitride film 5 is deposited on the entire surface as shown in (B), the second nitride film 5 is removed by vertical etching to form sidewalls as shown in (C).

다음에 (D)와같이 HTO(4)를 제거하고 제1필드산화막(6)을 성장시키면 측벽이 내측으로 경사지게 위치되며 이상태에서 제1필드산화막(6)을 제거한다.Next, as shown in (D), when the HTO 4 is removed and the first field oxide film 6 is grown, the side wall is inclined inward and the first field oxide film 6 is removed in this state.

이어서 (E)와같이 전표면에 패드산화막(7)과 제3질화막(8)을 증착하고 (F)와같이 수직식각에 의해 제3질화막(8)을 선택적 제거하고 채널스톱을 위한 이온주입을 실시한다. 또한, (G)와같이 제2필드산화막(9)을 성장시킨다. 이상에서 설명한 바와같은 본 발명은 두번의 필드산화를 실시하여 제2필드산화막(9)을 깊게 형성하므로 완벽한 액티브영역과의 격리를 이룰 수 있음은 물론 버즈비크에 의한 액티브 영역의 감소를 극소화시킬 수 있는 효과가 있다.Subsequently, the pad oxide film 7 and the third nitride film 8 are deposited on the entire surface as shown in (E), and the third nitride film 8 is selectively removed by vertical etching as shown in (F), and ion implantation for channel stop is performed. Conduct. Further, as shown in (G), the second field oxide film 9 is grown. As described above, since the second field oxide layer 9 is deeply formed by performing two field oxidations, the present invention can be isolated from a perfect active region and can minimize the reduction of the active region by Buzzbeek. It has an effect.

Claims (1)

기판(1)위에 베이스산화막(2)을 성장시키고 제1질화막(3), HTO(4)를 차례로 증착하는 공정과, 상기 전표면에 제2질화막(5)을 증착하고 식각하여 측벽을 형성하는 공정과, 상기 HTO(4)를 제거하고 제1필드산화막(6)성장후 제1필드산화막(6)을 제거하는 공정과, 패드산화막(7)과 제3질화막(8)을 증착하고 상기 제3질화막(8)을 수직식각한 후 채널스톱이온을 주입하는 공정과, 제2필드산화막(9)을 성장시키는 공정을 차례로 실시하여서 이루어짐을 특징으로 하는 반도체 소자의 격리영역 형성방법.Growing the base oxide film 2 on the substrate 1 and depositing the first nitride film 3 and the HTO 4 in turn, and depositing and etching the second nitride film 5 on the entire surface to form sidewalls. Removing the HTO 4 and removing the first field oxide film 6 after growing the first field oxide film 6; depositing the pad oxide film 7 and the third nitride film 8; A method of forming an isolation region of a semiconductor device, characterized by performing a step of implanting channel stop ions after the vertical etching of the third nitride film (8), followed by growing the second field oxide film (9).
KR1019910011721A 1991-07-10 1991-07-10 Method for forming an element isolation region in a semiconductor device KR100192540B1 (en)

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KR100192540B1 true KR100192540B1 (en) 1999-06-15

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