KR0125313B1 - Field oxidation method of semiconductor device - Google Patents
Field oxidation method of semiconductor deviceInfo
- Publication number
- KR0125313B1 KR0125313B1 KR1019940016089A KR19940016089A KR0125313B1 KR 0125313 B1 KR0125313 B1 KR 0125313B1 KR 1019940016089 A KR1019940016089 A KR 1019940016089A KR 19940016089 A KR19940016089 A KR 19940016089A KR 0125313 B1 KR0125313 B1 KR 0125313B1
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- film
- forming
- silicon substrate
- field oxide
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
Description
제1도는 종래의 필드 산화막 형성방법을 설명하기 위한 반도체 소자의 단면도.1 is a cross-sectional view of a semiconductor device for explaining a conventional method for forming a field oxide film.
제2a도 내지 2d도는 본 발명에 따른 필드 산화막 형성방법을 설명하기 위한 반도체 소자의 단면도.2A to 2D are cross-sectional views of a semiconductor device for explaining a method of forming a field oxide film according to the present invention.
제3도는 본 발명의 실시예를 설명하기 위한 반도체 소자의 단면도.3 is a cross-sectional view of a semiconductor device for explaining an embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 실리콘 기판 2 : 패드 산화막1 silicon substrate 2 pad oxide film
3, 10 : 질화막 4, 12 : 필드 산화막3, 10: nitride film 4, 12: field oxide film
5 : 제1열산화막 6 : 감광막 패턴5: first thermal oxide film 6: photosensitive film pattern
7 : 트렌치 8 : 제2열산화막7: trench 8: second thermal oxide film
9 : 폴리실리콘막 11 : 채널 스토퍼9: polysilicon film 11: channel stopper
13 : 질화막 스페이서 A : 버즈 비크13: nitride film spacer A: buzz beak
본 발명은 반도체 소자의 필드 산화막 형성방법에 관한 것으로, 특히 선택적인 열산화 공정에 의해 발생하는 버즈 비크를 제거하여 활성영역을 충분히 확보할 수 있도록 한 반도체 소자의 필드 산화막 형성방법에 관한 것이다.The present invention relates to a method of forming a field oxide film of a semiconductor device, and more particularly, to a method of forming a field oxide film of a semiconductor device in which an active area is sufficiently secured by removing a buzz bee generated by a selective thermal oxidation process.
일반적으로, 반도체 소자간의 분리를 위하여 필드 산화막이 형성되는데 종래의 필드 산화막 형성방법을 제1도를 참조하여 설명하면 다음과 같다.In general, a field oxide film is formed for separation between semiconductor devices. A conventional method for forming a field oxide film will be described with reference to FIG.
실리콘 기판(1)상에 패드 산화막(2) 및 질화막(3)을 순차적으로 형성한 다음 필드 산화막을 형성하고자 할 영역의 패드 산화막(2) 및 질화막(3)을 소정의 폭으로 식각하고 열산화공정을 실시하면 열산화막으로 이루어진 필드 산화막(4)이 형성되는데 이러한 종래기술은 상기 열산화막이 상기 질화막(3) 하부로 침투하여 버즈 비크(A)가 발생되므로 활성영역이 감소되는 단점이 있다.After the pad oxide film 2 and the nitride film 3 are sequentially formed on the silicon substrate 1, the pad oxide film 2 and the nitride film 3 in the region where the field oxide film is to be formed are etched to a predetermined width and thermally oxidized. When the process is performed, a field oxide film 4 formed of a thermal oxide film is formed. This conventional technique has a disadvantage in that an active area is reduced because the thermal oxide film penetrates into the lower portion of the nitride film 3 to generate a buzz beak A.
따라서 본 발명은 필드 산화막 형성시 버즈 비크 발생을 최소화하여 필드 산화막에 의한 실리콘 기판과의 단차를 제거할 수 있는 반도체 소자의 필드 산화막 형성방법을 제공하는데 그 목적이 있다.Accordingly, an object of the present invention is to provide a method of forming a field oxide film of a semiconductor device capable of minimizing occurrence of buzz beak when forming a field oxide film, thereby removing a step with a silicon substrate due to the field oxide film.
상술한 목적을 달성하기 위한 본 발명은 실리콘 기판(1)상에 제1열산화막(5)을 형성한 다음 마스크 및 식각공정에 의해 상기 실리콘 기판(1)상에 트렌치(7)를 형성하는 단계와, 상기 단계로부터 상기 제1열산화막(5)을 제거하고 전체구조 상부에 제2열산화막(8), 폴리실리콘막(9) 및 질화막(10)을 순차적으로 형성하는 단계와, 상기 단계로부터 상기 폴리실리콘막(9)이 소정두께로 잔류하도록 상기 질화막(10) 및 폴리실리콘막(9)을 설정된 폭으로 제거한 후 상기 실리콘 기판(1)상에 채널스토퍼(11)를 형성하는 단계와, 상기 단계로부터 열산화공정을 실시한 후 상기 질화막(10), 폴리실리콘막(9) 및 제2열산화막(8)을 제거하는 단계로 이루어지는 것을 특징으로 한다.The present invention for achieving the above object is a step of forming a trench 7 on the silicon substrate 1 by forming a first thermal oxide film (5) on the silicon substrate 1 by a mask and etching process And removing the first thermal oxide film 5 from the step and sequentially forming a second thermal oxide film 8, a polysilicon film 9, and a nitride film 10 on the entire structure. Removing the nitride film 10 and the polysilicon film 9 to a predetermined width so that the polysilicon film 9 remains at a predetermined thickness, and then forming a channel stopper 11 on the silicon substrate 1; After performing the thermal oxidation process from the above step is characterized in that the step of removing the nitride film 10, the polysilicon film 9 and the second thermal oxide film (8).
이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
제2a 내지 제2d도는 본 발명에 따른 필드 산화막 형성방법을 설명하기 위한 반도체 소자의 단면도로서, 제2a도는 실리콘 기판(1)상에 소정두께의 제1열산화막(5)을 형성한 다음 상기 제1열산화막(5) 상부에 감광막 패턴(6)을 형성하고 식각공정을 실시하여 트렌치(7)가 형성된 상태의 단면도이다.2A through 2D are cross-sectional views of a semiconductor device for describing a method of forming a field oxide film according to the present invention. FIG. 2A is a cross-sectional view of a first thermal oxide film 5 having a predetermined thickness formed on a silicon substrate 1. 1 is a cross-sectional view of a state in which a trench 7 is formed by forming a photosensitive film pattern 6 on the thermal oxidation film 5 and performing an etching process.
제2b도는 상기 감광막 패턴(6)과 제1열산화막(5)을 제거한 다음 전체구조 상부에 제2열산화막(8), 폴리실리콘(9) 및 질화막(10)을 순차적으로 형성한 상태의 단면도이다.2b is a cross-sectional view of a state in which the second thermal oxide film 8, the polysilicon 9, and the nitride film 10 are sequentially formed on the entire structure after removing the photosensitive film pattern 6 and the first thermal oxide film 5; to be.
제2c도는 제2b도 상태에서 마스크 및 식각공정에 의해 상기 질화막(10)이 소정의 폭으로 식각되되 노출되는 상기 폴리실리콘막(9)이 소정의 두께로 식각된 상태에서 BF2 이온을 1×1012∼1×1015원자/㎠, 30∼100Kev의 조건하에서 주입하여 채널스토퍼(11)를 형성한 상태의 단면도이다.FIG. 2C illustrates that the nitride film 10 is etched to a predetermined width by a mask and etching process in FIG. It is sectional drawing in the state in which the channel stopper 11 was formed by injecting on condition of 12-1 * 10 <15> atoms / cm <2> and 30-100 Kev.
제2d도는 제2c도 상태에서 열산화공정을 실시한 다음 상기 질화막(10), 폴리실리콘막(9) 및 제2열산화막(8)을 제거하여 버즈 비크없이 필드 산화막(12)이 형성된 상태의 단면도이다.FIG. 2D is a cross-sectional view of the field oxide film 12 formed without a buzz beak by performing the thermal oxidation process in the FIG. 2C state and then removing the nitride film 10, the polysilicon film 9 and the second thermal oxide film 8 from FIG. to be.
제3도는 본 발명의 실시예를 설명하기 위한 반도체 소자의 단면도로서, 전술한 제2a도 및 제2b도 공정을 진행한 다음 공지의 사진 식각공정에 의해 상기 폴리실리콘막(9)이 소정두께로 잔류하도록 상기 질화막(10)을 설정된 폭으로 제거하고 개구된 상기 질화막(10) 및 폴리실리콘막(9)의 측벽에 질화막 스페이서(13)를 형성한 후 BF2이온을 1×1012∼1×1015원자/㎠, 30∼100Kev의 조건하에서 주입하여 채널스토퍼(11)를 형성한 상태의 단면도이다.3 is a cross-sectional view of a semiconductor device for explaining an embodiment of the present invention, wherein the polysilicon film 9 is formed to a predetermined thickness by a known photolithography process after the above-described steps 2a and 2b are performed. After removing the nitride film 10 to a predetermined width so as to remain, and forming a nitride film spacer 13 on the sidewalls of the nitride film 10 and the polysilicon film 9 that are opened, BF 2 ions 1 × 10 12 to 1 × It is sectional drawing of the state in which the channel stopper 11 was formed by injecting on 10 15 atoms / cm <2> and 30-100 Kev conditions.
이후, 전술한 제2d도와 동일한 공정을 실시하여 버즈 비크없이 필드 산화막을 형성할 수 있다.Thereafter, the same process as in FIG. 2D described above may be performed to form a field oxide film without a buzz beak.
상술한 바와 같이 본 발명에 의하면 필드 산화막 형성시 버즈 비크 발생을 최소화하여 필드 산화막에 의한 실리콘 기판과의 단차를 없앰으로써 반도체 소자의 특성과 신뢰성을 향상시킬 수 있는 탁월한 효과가 있다.As described above, according to the present invention, there is an excellent effect of minimizing the occurrence of the buzz beak when forming the field oxide film to eliminate the step with the silicon substrate by the field oxide film, thereby improving the characteristics and reliability of the semiconductor device.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940016089A KR0125313B1 (en) | 1994-07-06 | 1994-07-06 | Field oxidation method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940016089A KR0125313B1 (en) | 1994-07-06 | 1994-07-06 | Field oxidation method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960005841A KR960005841A (en) | 1996-02-23 |
| KR0125313B1 true KR0125313B1 (en) | 1997-12-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940016089A KR0125313B1 (en) | 1994-07-06 | 1994-07-06 | Field oxidation method of semiconductor device |
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| KR (1) | KR0125313B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100363836B1 (en) * | 2000-03-28 | 2002-12-06 | 이재필 | accumulating calorie meter |
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1994
- 1994-07-06 KR KR1019940016089A patent/KR0125313B1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960005841A (en) | 1996-02-23 |
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