JPS57184231A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57184231A
JPS57184231A JP6959181A JP6959181A JPS57184231A JP S57184231 A JPS57184231 A JP S57184231A JP 6959181 A JP6959181 A JP 6959181A JP 6959181 A JP6959181 A JP 6959181A JP S57184231 A JPS57184231 A JP S57184231A
Authority
JP
Japan
Prior art keywords
silicon substrate
layer
etched
shaped
line section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6959181A
Other languages
Japanese (ja)
Other versions
JPH0371782B2 (en
Inventor
Shigeru Terada
Takeshi Fukuda
Takayuki Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6959181A priority Critical patent/JPS57184231A/en
Publication of JPS57184231A publication Critical patent/JPS57184231A/en
Publication of JPH0371782B2 publication Critical patent/JPH0371782B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce a rate to be etched to the dry etching of a silicon substrate, and to prevent the generation of an overhang by introducing boron to a dicing line section during an element forming process. CONSTITUTION:An N type epitaxial layer 13 is formed onto a P type substrate 12, and SiO2 film 15 is shaped to the silicon substrate 11 into which an N<+> type buried layer 14 is formed. A window 16 for isolation and diffusion and a dicing line section window 17 are shaped to the SiO2 film 15. Boron is introduced to the surface of the silicon substrate 11 through an ion implantation method or a diffusion method, and an isolation diffusion layer 18 is molded while a P type region 19 is shaped to the dicing line section B. The rate to be etched to dry etching is reduced in the silicon substrate 11 into which boron is introduced, and the surface of the silicon substrate 11 of a lower layer is not etched so much when a PSG layer not shown is removed.
JP6959181A 1981-05-08 1981-05-08 Manufacture of semiconductor device Granted JPS57184231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6959181A JPS57184231A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6959181A JPS57184231A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57184231A true JPS57184231A (en) 1982-11-12
JPH0371782B2 JPH0371782B2 (en) 1991-11-14

Family

ID=13407215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6959181A Granted JPS57184231A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57184231A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH059828U (en) * 1991-07-19 1993-02-09 アロン化成株式会社 Focus tube cutting jig

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140886A (en) * 1974-10-04 1976-04-06 Mitsubishi Electric Corp PUREENAGATA HANDOTAISOCHI
JPS5252566A (en) * 1975-10-25 1977-04-27 Toshiba Corp Production of semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140886A (en) * 1974-10-04 1976-04-06 Mitsubishi Electric Corp PUREENAGATA HANDOTAISOCHI
JPS5252566A (en) * 1975-10-25 1977-04-27 Toshiba Corp Production of semiconductor element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH059828U (en) * 1991-07-19 1993-02-09 アロン化成株式会社 Focus tube cutting jig

Also Published As

Publication number Publication date
JPH0371782B2 (en) 1991-11-14

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