JPS57164547A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57164547A
JPS57164547A JP4991281A JP4991281A JPS57164547A JP S57164547 A JPS57164547 A JP S57164547A JP 4991281 A JP4991281 A JP 4991281A JP 4991281 A JP4991281 A JP 4991281A JP S57164547 A JPS57164547 A JP S57164547A
Authority
JP
Japan
Prior art keywords
oxide film
locos oxide
silicon nitride
nitride film
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4991281A
Other languages
Japanese (ja)
Inventor
Norio Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4991281A priority Critical patent/JPS57164547A/en
Publication of JPS57164547A publication Critical patent/JPS57164547A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To obtain flat LOCOS oxide film by a short process and improve the reliability and obtain a fine element by forming LOCOS oxide film after forming amorphous layer on the surface of a semiconductor substrate. CONSTITUTION:Inert impurity, for instance argon, is ion-injected into the surface of a silicon substrate 11 and amorpous layer 14 is formed. After silicon nitride film 15 is formed, an aperture is made by removing the silicon nitride film 15 partially. The silicon substrate 11 is removed partially to the required depth by etching through this aperture 16. The oxidization is carried out using the silicon nitride film 15 as a mask and LOCOS oxide film 17 is formed on the silicon substrate.
JP4991281A 1981-04-02 1981-04-02 Manufacture of semiconductor device Pending JPS57164547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4991281A JPS57164547A (en) 1981-04-02 1981-04-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4991281A JPS57164547A (en) 1981-04-02 1981-04-02 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57164547A true JPS57164547A (en) 1982-10-09

Family

ID=12844219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4991281A Pending JPS57164547A (en) 1981-04-02 1981-04-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57164547A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542671A (en) * 1977-06-03 1979-01-10 Ibm Method of producing semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542671A (en) * 1977-06-03 1979-01-10 Ibm Method of producing semiconductor

Similar Documents

Publication Publication Date Title
JPS6433969A (en) Manufacture of semiconductor device
JPS54154272A (en) Contact forming method for semiconductor device
JPS57164547A (en) Manufacture of semiconductor device
EP0373221A4 (en) Fabrication method for semiconductor device and film formation apparatus for said method
JPS5512767A (en) Semiconductor device manufacturing method
JPS5735368A (en) Manufacture of semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5772346A (en) Manufacture of semiconductor device
JPS6428962A (en) Semiconductor device and manufacture thereof
JPS6430244A (en) Manufacture of semiconductor device
JPS57184231A (en) Manufacture of semiconductor device
JPS56130940A (en) Manufacture of semiconductor device
JPS57173956A (en) Manufacture of semiconductor device
JPS6421940A (en) Manufacture of semiconductor device
JPS57206071A (en) Semiconductor device and manufacture thereof
JPS53116787A (en) Production of semiconductor device
JPS6445139A (en) Manufacture of semiconductor device
JPS5455378A (en) Production of semiconductor device
JPS5787151A (en) Manufacture of semiconductor device
JPS5660015A (en) Manufacture of semiconductor device
JPS649639A (en) Manufacture of insulating film for element isolation of semiconductor device
JPS57199232A (en) Manufacture of semiconductor device
JPS57143862A (en) Manufacture of semiconductor integrated circuit
JPS5570046A (en) Forming method of oxide film
JPS644078A (en) Semiconductor storage device and manufacture thereof