JPS5570046A - Forming method of oxide film - Google Patents
Forming method of oxide filmInfo
- Publication number
- JPS5570046A JPS5570046A JP14463378A JP14463378A JPS5570046A JP S5570046 A JPS5570046 A JP S5570046A JP 14463378 A JP14463378 A JP 14463378A JP 14463378 A JP14463378 A JP 14463378A JP S5570046 A JPS5570046 A JP S5570046A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- resist
- film
- deposited
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Weting (AREA)
Abstract
PURPOSE: To enable formation of a thick oxide film having highly accurate pattern and slope on a stepped portion by forming a scratched surface layer on a semiconductor isolating oxide film by an ion implanting process.
CONSTITUTION: A thick oxide film is formed on a silicon wafer 1 by a thermal oxidation, predetermined pattern is formed thereon by a resist, and boron ion is implanted thereto with a resist film as mask to thereby form a p-type ion implanted layer 5. Then, silicon is deposited at lower temperature not to occur deformation of the resist, and the resist is then removed. Then, atom of large mass number such as arsenic or the like is ion implanted to thereby form a scratched layer 7, a silicon oxide film 2' is etched with the deposited film 6 as a mask, and the deposited film 6 is then removed. Thus, an oxide film having tapered periphery is obtained to readily arrange metal electrode wire, and size deformation thereof due to lateral oxidation is eliminated to thereby enhance the size accuracy thereof.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14463378A JPS5570046A (en) | 1978-11-21 | 1978-11-21 | Forming method of oxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14463378A JPS5570046A (en) | 1978-11-21 | 1978-11-21 | Forming method of oxide film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5570046A true JPS5570046A (en) | 1980-05-27 |
Family
ID=15366580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14463378A Pending JPS5570046A (en) | 1978-11-21 | 1978-11-21 | Forming method of oxide film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5570046A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58130534A (en) * | 1982-01-29 | 1983-08-04 | Seiko Epson Corp | Manufacture of semiconductor device |
-
1978
- 1978-11-21 JP JP14463378A patent/JPS5570046A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58130534A (en) * | 1982-01-29 | 1983-08-04 | Seiko Epson Corp | Manufacture of semiconductor device |
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