JPS5570046A - Forming method of oxide film - Google Patents

Forming method of oxide film

Info

Publication number
JPS5570046A
JPS5570046A JP14463378A JP14463378A JPS5570046A JP S5570046 A JPS5570046 A JP S5570046A JP 14463378 A JP14463378 A JP 14463378A JP 14463378 A JP14463378 A JP 14463378A JP S5570046 A JPS5570046 A JP S5570046A
Authority
JP
Japan
Prior art keywords
oxide film
resist
film
deposited
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14463378A
Other languages
Japanese (ja)
Inventor
Hiroshi Shibata
Hideo Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14463378A priority Critical patent/JPS5570046A/en
Publication of JPS5570046A publication Critical patent/JPS5570046A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To enable formation of a thick oxide film having highly accurate pattern and slope on a stepped portion by forming a scratched surface layer on a semiconductor isolating oxide film by an ion implanting process.
CONSTITUTION: A thick oxide film is formed on a silicon wafer 1 by a thermal oxidation, predetermined pattern is formed thereon by a resist, and boron ion is implanted thereto with a resist film as mask to thereby form a p-type ion implanted layer 5. Then, silicon is deposited at lower temperature not to occur deformation of the resist, and the resist is then removed. Then, atom of large mass number such as arsenic or the like is ion implanted to thereby form a scratched layer 7, a silicon oxide film 2' is etched with the deposited film 6 as a mask, and the deposited film 6 is then removed. Thus, an oxide film having tapered periphery is obtained to readily arrange metal electrode wire, and size deformation thereof due to lateral oxidation is eliminated to thereby enhance the size accuracy thereof.
COPYRIGHT: (C)1980,JPO&Japio
JP14463378A 1978-11-21 1978-11-21 Forming method of oxide film Pending JPS5570046A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14463378A JPS5570046A (en) 1978-11-21 1978-11-21 Forming method of oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14463378A JPS5570046A (en) 1978-11-21 1978-11-21 Forming method of oxide film

Publications (1)

Publication Number Publication Date
JPS5570046A true JPS5570046A (en) 1980-05-27

Family

ID=15366580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14463378A Pending JPS5570046A (en) 1978-11-21 1978-11-21 Forming method of oxide film

Country Status (1)

Country Link
JP (1) JPS5570046A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130534A (en) * 1982-01-29 1983-08-04 Seiko Epson Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58130534A (en) * 1982-01-29 1983-08-04 Seiko Epson Corp Manufacture of semiconductor device

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