JPS5255380A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5255380A JPS5255380A JP13086875A JP13086875A JPS5255380A JP S5255380 A JPS5255380 A JP S5255380A JP 13086875 A JP13086875 A JP 13086875A JP 13086875 A JP13086875 A JP 13086875A JP S5255380 A JPS5255380 A JP S5255380A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- melting point
- low melting
- point glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain a process for production of a highly reliable semiconductor without having etching, etc. to low melting point glass by sintering low melting point glass on the exposed part of PN junctions thereafter forming a nitride film thereon.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13086875A JPS5255380A (en) | 1975-10-30 | 1975-10-30 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13086875A JPS5255380A (en) | 1975-10-30 | 1975-10-30 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5255380A true JPS5255380A (en) | 1977-05-06 |
Family
ID=15044565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13086875A Pending JPS5255380A (en) | 1975-10-30 | 1975-10-30 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5255380A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021840A (en) * | 1987-08-18 | 1991-06-04 | Texas Instruments Incorporated | Schottky or PN diode with composite sidewall |
-
1975
- 1975-10-30 JP JP13086875A patent/JPS5255380A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021840A (en) * | 1987-08-18 | 1991-06-04 | Texas Instruments Incorporated | Schottky or PN diode with composite sidewall |
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