JPS6425472A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6425472A
JPS6425472A JP18270087A JP18270087A JPS6425472A JP S6425472 A JPS6425472 A JP S6425472A JP 18270087 A JP18270087 A JP 18270087A JP 18270087 A JP18270087 A JP 18270087A JP S6425472 A JPS6425472 A JP S6425472A
Authority
JP
Japan
Prior art keywords
base
film
implanted
exposed
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18270087A
Other languages
Japanese (ja)
Inventor
Hiromi Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18270087A priority Critical patent/JPS6425472A/en
Publication of JPS6425472A publication Critical patent/JPS6425472A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a semiconductor device having less photocomposing steps and high forming accuracy by forming regions to become an outer base and an emitter on the basis of an insulating film of a predetermined shape without an opening step of an oxide film. CONSTITUTION:An isolating oxide film 2 is formed, for example, on an N-type collector 1 of a semiconductor substrate, a resist pattern is formed thereon, boron is, for example, implanted to the exposed collector 1, diffused to form a P<-> type base 3, and an oxide film 4 is further formed thereon. Then, a nitride film is formed on the whole surface, a resist pattern 6 is further formed thereon, the exposed nitride film is removed by etching, boron ions are implanted, for example, from the exposed film 4 to the base 3 to form implanted parts 7 at both sides of the base 3. Then, the pattern 6 is removed, and the surface of the base 3 is thermally oxidized. Subsequently, after the film 5 is removed, a polysilicon layer is deposited on the whole surface, and an impurity of arsenic is implanted. The polysilicon 9 of predetermined shape including the base 3 exposed by etching is patterned, and eventually heat treated.
JP18270087A 1987-07-21 1987-07-21 Manufacture of semiconductor device Pending JPS6425472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18270087A JPS6425472A (en) 1987-07-21 1987-07-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18270087A JPS6425472A (en) 1987-07-21 1987-07-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6425472A true JPS6425472A (en) 1989-01-27

Family

ID=16122905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18270087A Pending JPS6425472A (en) 1987-07-21 1987-07-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6425472A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6034062A (en) * 1983-08-05 1985-02-21 Nec Corp Manufacture of semiconductor device
JPS6295871A (en) * 1985-10-22 1987-05-02 Nec Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6034062A (en) * 1983-08-05 1985-02-21 Nec Corp Manufacture of semiconductor device
JPS6295871A (en) * 1985-10-22 1987-05-02 Nec Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
US4531282A (en) Bipolar transistors having vertically arrayed collector-base-emitter with novel polycrystalline base electrode surrounding island emitter and method of making same
KR0139805B1 (en) Method of making single polysilicon self-aligned transistor
EP0189486A1 (en) Method of producing bipolar semiconductor devices
US4151010A (en) Forming adjacent impurity regions in a semiconductor by oxide masking
JPS57139965A (en) Manufacture of semiconductor device
JPS5467778A (en) Production of semiconductor device
US4191595A (en) Method of manufacturing PN junctions in a semiconductor region to reach an isolation layer without exposing the semiconductor region surface
US4577397A (en) Method for manufacturing a semiconductor device having vertical and lateral transistors
US4118250A (en) Process for producing integrated circuit devices by ion implantation
US3948694A (en) Self-aligned method for integrated circuit manufacture
US4586243A (en) Method for more uniformly spacing features in a semiconductor monolithic integrated circuit
JPS6425472A (en) Manufacture of semiconductor device
JPS5544715A (en) Manufacturing semiconductor device
JPH0756870B2 (en) Method for manufacturing semiconductor device
JPS57134956A (en) Manufacture of semiconductor integrated circuit
US4544940A (en) Method for more uniformly spacing features in a lateral bipolar transistor
JPS57155772A (en) Manufacture of semiconductor device
JPS55111144A (en) Manufacturing method of semiconductor device
JPS6425569A (en) Manufacture of semiconductor device
JPS57143861A (en) Manufacture of semiconductor device
JPS5731172A (en) Manufacture of semiconductor device
JPS6427265A (en) Manufacture of semiconductor device
JPS57176764A (en) Manufacture of semiconductor device
JPS57173956A (en) Manufacture of semiconductor device
JPS55132053A (en) Manufacture of semiconductor device