JPS5544715A - Manufacturing semiconductor device - Google Patents

Manufacturing semiconductor device

Info

Publication number
JPS5544715A
JPS5544715A JP11751478A JP11751478A JPS5544715A JP S5544715 A JPS5544715 A JP S5544715A JP 11751478 A JP11751478 A JP 11751478A JP 11751478 A JP11751478 A JP 11751478A JP S5544715 A JPS5544715 A JP S5544715A
Authority
JP
Japan
Prior art keywords
region
silicon
nitride film
resistor
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11751478A
Other languages
Japanese (ja)
Other versions
JPS5942987B2 (en
Inventor
Mineo Shimizu
Hironori Kitabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP53117514A priority Critical patent/JPS5942987B2/en
Publication of JPS5544715A publication Critical patent/JPS5544715A/en
Publication of JPS5942987B2 publication Critical patent/JPS5942987B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain high degree of integration by facilitating formation of a wall emitter by the use of polycrystal silicon and a nitride film; by forming a base take- out electrode of polycrystal silicon; and by forming a resistor to reduce parasitic capacitance.
CONSTITUTION: After the process of separation and oxidation on a P-type silicon substrate has completed, a nitride film 45 and an oxidized film 44 are sequentially removed. Thereafter, oxidization is made again, and a deep collector 49 is formed by introducing N-type impurities from a region 50, and a base layer 50 is formed by injecting P-type impurities from a region 52. Then, after the oxidized film in the region 51 is removed and polycrystal silicon 53 is deposited, a nitride film is deposited. Thereafter, a resistor region, an emitter region, a collector region, and a base take-out region 54W57 are formed and other portions are removed. Furthermore, the exposed silicon 53 is selectively oxidized, the nitride film on the base take-out electrode 59 and the resistor 60 are removed in self-aligning fashion, P- type impurities are introduced, the silicon 53 is exposed, a side base 64 and other regions are formed, and, then, self-aligning etching is again performed, thereby emitter, collector, and the like are formed.
COPYRIGHT: (C)1980,JPO&Japio
JP53117514A 1978-09-26 1978-09-26 Manufacturing method of semiconductor device Expired JPS5942987B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53117514A JPS5942987B2 (en) 1978-09-26 1978-09-26 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53117514A JPS5942987B2 (en) 1978-09-26 1978-09-26 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5544715A true JPS5544715A (en) 1980-03-29
JPS5942987B2 JPS5942987B2 (en) 1984-10-18

Family

ID=14713635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53117514A Expired JPS5942987B2 (en) 1978-09-26 1978-09-26 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5942987B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577150A (en) * 1980-06-16 1982-01-14 Fujitsu Ltd Manufacture of semiconductor device
JPS5763856A (en) * 1980-10-07 1982-04-17 Oki Electric Ind Co Ltd Preparationof semiconductor element
JPS5832455A (en) * 1981-08-20 1983-02-25 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS5835971A (en) * 1981-08-28 1983-03-02 Fujitsu Ltd Manufacture of semiconductor device
JPS5856460A (en) * 1981-09-30 1983-04-04 Fujitsu Ltd Semiconductor device
JPS5867060A (en) * 1981-10-19 1983-04-21 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS61117870A (en) * 1984-11-14 1986-06-05 Oki Electric Ind Co Ltd Manufacture of semiconductor ic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119484A (en) * 1974-08-09 1976-02-16 Hitachi Ltd Handotaisochito sonoseizohoho
JPS5140866A (en) * 1974-10-04 1976-04-06 Nippon Electric Co HANDOTA ISOCHI
JPS51130174A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor device process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119484A (en) * 1974-08-09 1976-02-16 Hitachi Ltd Handotaisochito sonoseizohoho
JPS5140866A (en) * 1974-10-04 1976-04-06 Nippon Electric Co HANDOTA ISOCHI
JPS51130174A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor device process

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577150A (en) * 1980-06-16 1982-01-14 Fujitsu Ltd Manufacture of semiconductor device
JPS5763856A (en) * 1980-10-07 1982-04-17 Oki Electric Ind Co Ltd Preparationof semiconductor element
JPS5832455A (en) * 1981-08-20 1983-02-25 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH0128508B2 (en) * 1981-08-20 1989-06-02 Oki Electric Ind Co Ltd
JPS5835971A (en) * 1981-08-28 1983-03-02 Fujitsu Ltd Manufacture of semiconductor device
JPH0126186B2 (en) * 1981-08-28 1989-05-22 Fujitsu Ltd
JPS5856460A (en) * 1981-09-30 1983-04-04 Fujitsu Ltd Semiconductor device
JPH0239091B2 (en) * 1981-09-30 1990-09-04 Fujitsu Ltd
JPS5867060A (en) * 1981-10-19 1983-04-21 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH0239092B2 (en) * 1981-10-19 1990-09-04 Oki Electric Ind Co Ltd
JPS61117870A (en) * 1984-11-14 1986-06-05 Oki Electric Ind Co Ltd Manufacture of semiconductor ic device

Also Published As

Publication number Publication date
JPS5942987B2 (en) 1984-10-18

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