JPS5544715A - Manufacturing semiconductor device - Google Patents
Manufacturing semiconductor deviceInfo
- Publication number
- JPS5544715A JPS5544715A JP11751478A JP11751478A JPS5544715A JP S5544715 A JPS5544715 A JP S5544715A JP 11751478 A JP11751478 A JP 11751478A JP 11751478 A JP11751478 A JP 11751478A JP S5544715 A JPS5544715 A JP S5544715A
- Authority
- JP
- Japan
- Prior art keywords
- region
- silicon
- nitride film
- resistor
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain high degree of integration by facilitating formation of a wall emitter by the use of polycrystal silicon and a nitride film; by forming a base take- out electrode of polycrystal silicon; and by forming a resistor to reduce parasitic capacitance.
CONSTITUTION: After the process of separation and oxidation on a P-type silicon substrate has completed, a nitride film 45 and an oxidized film 44 are sequentially removed. Thereafter, oxidization is made again, and a deep collector 49 is formed by introducing N-type impurities from a region 50, and a base layer 50 is formed by injecting P-type impurities from a region 52. Then, after the oxidized film in the region 51 is removed and polycrystal silicon 53 is deposited, a nitride film is deposited. Thereafter, a resistor region, an emitter region, a collector region, and a base take-out region 54W57 are formed and other portions are removed. Furthermore, the exposed silicon 53 is selectively oxidized, the nitride film on the base take-out electrode 59 and the resistor 60 are removed in self-aligning fashion, P- type impurities are introduced, the silicon 53 is exposed, a side base 64 and other regions are formed, and, then, self-aligning etching is again performed, thereby emitter, collector, and the like are formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53117514A JPS5942987B2 (en) | 1978-09-26 | 1978-09-26 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53117514A JPS5942987B2 (en) | 1978-09-26 | 1978-09-26 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5544715A true JPS5544715A (en) | 1980-03-29 |
JPS5942987B2 JPS5942987B2 (en) | 1984-10-18 |
Family
ID=14713635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53117514A Expired JPS5942987B2 (en) | 1978-09-26 | 1978-09-26 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5942987B2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS577150A (en) * | 1980-06-16 | 1982-01-14 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5763856A (en) * | 1980-10-07 | 1982-04-17 | Oki Electric Ind Co Ltd | Preparationof semiconductor element |
JPS5832455A (en) * | 1981-08-20 | 1983-02-25 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit device |
JPS5835971A (en) * | 1981-08-28 | 1983-03-02 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5856460A (en) * | 1981-09-30 | 1983-04-04 | Fujitsu Ltd | Semiconductor device |
JPS5867060A (en) * | 1981-10-19 | 1983-04-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit device |
JPS61117870A (en) * | 1984-11-14 | 1986-06-05 | Oki Electric Ind Co Ltd | Manufacture of semiconductor ic device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5119484A (en) * | 1974-08-09 | 1976-02-16 | Hitachi Ltd | Handotaisochito sonoseizohoho |
JPS5140866A (en) * | 1974-10-04 | 1976-04-06 | Nippon Electric Co | HANDOTA ISOCHI |
JPS51130174A (en) * | 1975-05-06 | 1976-11-12 | Matsushita Electric Ind Co Ltd | Semiconductor device process |
-
1978
- 1978-09-26 JP JP53117514A patent/JPS5942987B2/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5119484A (en) * | 1974-08-09 | 1976-02-16 | Hitachi Ltd | Handotaisochito sonoseizohoho |
JPS5140866A (en) * | 1974-10-04 | 1976-04-06 | Nippon Electric Co | HANDOTA ISOCHI |
JPS51130174A (en) * | 1975-05-06 | 1976-11-12 | Matsushita Electric Ind Co Ltd | Semiconductor device process |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS577150A (en) * | 1980-06-16 | 1982-01-14 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5763856A (en) * | 1980-10-07 | 1982-04-17 | Oki Electric Ind Co Ltd | Preparationof semiconductor element |
JPS5832455A (en) * | 1981-08-20 | 1983-02-25 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit device |
JPH0128508B2 (en) * | 1981-08-20 | 1989-06-02 | Oki Electric Ind Co Ltd | |
JPS5835971A (en) * | 1981-08-28 | 1983-03-02 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0126186B2 (en) * | 1981-08-28 | 1989-05-22 | Fujitsu Ltd | |
JPS5856460A (en) * | 1981-09-30 | 1983-04-04 | Fujitsu Ltd | Semiconductor device |
JPH0239091B2 (en) * | 1981-09-30 | 1990-09-04 | Fujitsu Ltd | |
JPS5867060A (en) * | 1981-10-19 | 1983-04-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit device |
JPH0239092B2 (en) * | 1981-10-19 | 1990-09-04 | Oki Electric Ind Co Ltd | |
JPS61117870A (en) * | 1984-11-14 | 1986-06-05 | Oki Electric Ind Co Ltd | Manufacture of semiconductor ic device |
Also Published As
Publication number | Publication date |
---|---|
JPS5942987B2 (en) | 1984-10-18 |
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