JPS5591864A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5591864A
JPS5591864A JP16479278A JP16479278A JPS5591864A JP S5591864 A JPS5591864 A JP S5591864A JP 16479278 A JP16479278 A JP 16479278A JP 16479278 A JP16479278 A JP 16479278A JP S5591864 A JPS5591864 A JP S5591864A
Authority
JP
Japan
Prior art keywords
layer
diffusion
silicon oxide
base
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16479278A
Other languages
Japanese (ja)
Inventor
Tadashi Kirisako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16479278A priority Critical patent/JPS5591864A/en
Publication of JPS5591864A publication Critical patent/JPS5591864A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make it possible to form a conducting layer accurately on a pn-junction region by providing a base diffusion window by using as a diffusion mask a silicon oxide layer and a polycrystalline silicon layer on a silicon substrate.
CONSTITUTION: After silicon oxide layer 12 is formed on n-type epitaxial layer 11 formed on p-type silicon semiconductor substrate 23, diffusion window 12A is formed. Next, polycrystalline silicon layer 17 is formed, and by using silicon oxide layer 12 as a diffusion mask, p-type separation layer 13 is formed. Further, thin silicon oxide layer 12 is formed on the surface of the polycrystalline silicon layer. Next, by forming diffusion window 7c, collector-contact region 14 is formed by diffusion. Next, by forming a base diffusion window, base region 15 is formed by diffusion. Then, emitter electrode 16, base electrode 21, collector electrode 22 and an aluminum wiring layer are formed.
COPYRIGHT: (C)1980,JPO&Japio
JP16479278A 1978-12-28 1978-12-28 Manufacture of semiconductor device Pending JPS5591864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16479278A JPS5591864A (en) 1978-12-28 1978-12-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16479278A JPS5591864A (en) 1978-12-28 1978-12-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5591864A true JPS5591864A (en) 1980-07-11

Family

ID=15800021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16479278A Pending JPS5591864A (en) 1978-12-28 1978-12-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5591864A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846461U (en) * 1981-09-25 1983-03-29 三洋電機株式会社 Semiconductor integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157074A (en) * 1974-06-10 1975-12-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157074A (en) * 1974-06-10 1975-12-18

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846461U (en) * 1981-09-25 1983-03-29 三洋電機株式会社 Semiconductor integrated circuit device
JPH0129795Y2 (en) * 1981-09-25 1989-09-11

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