JPS5591864A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5591864A JPS5591864A JP16479278A JP16479278A JPS5591864A JP S5591864 A JPS5591864 A JP S5591864A JP 16479278 A JP16479278 A JP 16479278A JP 16479278 A JP16479278 A JP 16479278A JP S5591864 A JPS5591864 A JP S5591864A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diffusion
- silicon oxide
- base
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To make it possible to form a conducting layer accurately on a pn-junction region by providing a base diffusion window by using as a diffusion mask a silicon oxide layer and a polycrystalline silicon layer on a silicon substrate.
CONSTITUTION: After silicon oxide layer 12 is formed on n-type epitaxial layer 11 formed on p-type silicon semiconductor substrate 23, diffusion window 12A is formed. Next, polycrystalline silicon layer 17 is formed, and by using silicon oxide layer 12 as a diffusion mask, p-type separation layer 13 is formed. Further, thin silicon oxide layer 12 is formed on the surface of the polycrystalline silicon layer. Next, by forming diffusion window 7c, collector-contact region 14 is formed by diffusion. Next, by forming a base diffusion window, base region 15 is formed by diffusion. Then, emitter electrode 16, base electrode 21, collector electrode 22 and an aluminum wiring layer are formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16479278A JPS5591864A (en) | 1978-12-28 | 1978-12-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16479278A JPS5591864A (en) | 1978-12-28 | 1978-12-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5591864A true JPS5591864A (en) | 1980-07-11 |
Family
ID=15800021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16479278A Pending JPS5591864A (en) | 1978-12-28 | 1978-12-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591864A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5846461U (en) * | 1981-09-25 | 1983-03-29 | 三洋電機株式会社 | Semiconductor integrated circuit device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50157074A (en) * | 1974-06-10 | 1975-12-18 |
-
1978
- 1978-12-28 JP JP16479278A patent/JPS5591864A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50157074A (en) * | 1974-06-10 | 1975-12-18 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5846461U (en) * | 1981-09-25 | 1983-03-29 | 三洋電機株式会社 | Semiconductor integrated circuit device |
JPH0129795Y2 (en) * | 1981-09-25 | 1989-09-11 |
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