JPS5468173A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5468173A
JPS5468173A JP13478077A JP13478077A JPS5468173A JP S5468173 A JPS5468173 A JP S5468173A JP 13478077 A JP13478077 A JP 13478077A JP 13478077 A JP13478077 A JP 13478077A JP S5468173 A JPS5468173 A JP S5468173A
Authority
JP
Japan
Prior art keywords
emitter
region
polycrystal
silicon
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13478077A
Other languages
Japanese (ja)
Inventor
Yuji Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13478077A priority Critical patent/JPS5468173A/en
Publication of JPS5468173A publication Critical patent/JPS5468173A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To aviod the emitter and base short circuit due to the contact with the base electrode and polycrystal silicon layer, by preventing the superposition of the polycrystal silicon layer on the silicon oxide film at the circumference of the emitter region.
CONSTITUTION: On the silicon semiconductor region 1, silcon oxide film 2, polycrystal silicon layer 4, silicon nitride film 5 and silicon oxide film 6 are coated. Next, by leaving the silicon nitride film 5' of oxidation-proof on the region being the emitter, others are removed by etching. Then, boron is doped on the polycrystal silocon layer 4 exposed and the external base region 7 is formed and it is converted into the silicon oxide film 6. Next, after removing the silicon nitride film 5', the emitter impurity is doped through the polycrystal silicon layer 4', forming the internal base region 8. After that, arsenide is diffused and the emitter region 9 is formed. Further, the polycrystal silicon layer 4, emitter metallic electrode 10 in ohmic contact and the base electrode 11 are formed.
COPYRIGHT: (C)1979,JPO&Japio
JP13478077A 1977-11-11 1977-11-11 Semiconductor device and its manufacture Pending JPS5468173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13478077A JPS5468173A (en) 1977-11-11 1977-11-11 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13478077A JPS5468173A (en) 1977-11-11 1977-11-11 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5468173A true JPS5468173A (en) 1979-06-01

Family

ID=15136373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13478077A Pending JPS5468173A (en) 1977-11-11 1977-11-11 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5468173A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867060A (en) * 1981-10-19 1983-04-21 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS61158176A (en) * 1984-12-28 1986-07-17 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867060A (en) * 1981-10-19 1983-04-21 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH0239092B2 (en) * 1981-10-19 1990-09-04 Oki Electric Ind Co Ltd
JPS61158176A (en) * 1984-12-28 1986-07-17 Toshiba Corp Semiconductor device and manufacture thereof
JPH0421338B2 (en) * 1984-12-28 1992-04-09 Tokyo Shibaura Electric Co

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